Lei Zhao

A 6 watt LDMOS broadband high efficiency distributed power amplifier fabricated using LTCC technology

A novel new approach in designing high efficiency power distributed amplifiers for broadband wireless applications has been developed. This synthesis technique allows the designer to achieve power added efficiencies, during class B operation, greater than 50% while still preserving the low VSWR and broadband characteristics of distributed structures. The performance of these newly designed amplifiers can yield the same PAE and power output performance of narrow band, single-ended, reactively matched amplifiers, without the high sensitivity to manufacturing variations. This synthesis technique has been applied to develop LDMOS and PHEMT distributed power amplifiers for cellular base stations and portable communication applications.

A 1 watt, 3.2 VDC, high efficiency distributed power PHEMT amplifier fabricated using LTCC technology

A 1 watt distributed PHEMT amplifier, that operates from 800 MHz to 2.1 GHz, with a 3.2 Volt DC supply has been developed using a novel new approach. The amplifier was designed to provide high efficiency operation, targeted for broadband wireless applications. Key to the amplifiers performance, is a novel broadband impedance matching transformer, fabricated using LTCC technology, as well as a low loss tapered drain network. The class B design has 50 /spl Omega/ terminal impedances and built-in bias decoupling.