Leonardo Ravazzi

Application of advanced ion implantation techniques to Flash memories

Abstract Flash memories have become the most important of non-volatile memories because of their potential application as mass storage devices in portable computers. The evolution of Flash memory technology is oriented to both reducing cell size and up-grading product functions. Significant modifications of the structure and the operating modes of memory cell as well as innovative CMOS process architectures are needed for next generations of Flash memories. An important contribution to the evolution of Flash technology comes from the implementation of advanced ion implantation techniques; the role of large angle tilted implantation and of high energy implantation is illustrated showing most relevant applications in relation with the improvements of device structure and performance.