M. B. Yu

Fast and low power Michelson interferometer thermo-optical switch on SOI

We designed and fabricated silicon-on-insulator based Michelson interferometer (MI) thermo-optical switches with deep etched trenches for heat-isolation. Switch power was reduced approximately 20% for the switch with deep etched trenches, and the MI saved approximately 50% power than that of the Mach-Zehnder interferometer. 10.6 mW switch power, approximately 42 micros switch time for the MI with deep trenches, 13.14 mW switch power and approximately 34 micros switch time for the MI without deep trenches were achieved.

Cascade wide-angle Y-junction 1 × 16 optical power splitter based on silicon wire waveguides on silicon-on-insulator

A 1 x 16 optical power splitter with wide splitting angle, uniform outputs, and low excess loss is demonstrated. The 1 x 16 splitter comprising cascaded 1 x 2 splitters with arc-shaped branching waveguides is fabricated on the silicon-on-insulator (SOI) substrate. The gap between the branching waveguides is widened in a short propagation length such that influences of etch residues and air voids in the gap on the optical power uniformity are reduced significantly. The measured power uniformity of the 1 x 16 splitter is better than 0.3 dB at wavelength of 1550 nm.

Low Loss (~6.45dB/cm) Sub-Micron Polycrystalline Silicon Waveguide Integrated with Efficient SiON Waveguide Coupler

In this communication, the sub-micron size polycrystalline silicon (poly-Si) single mode waveguides are fabricated and integrated with SiON waveguide coupler by deep UV lithography. The propagation loss of poly-Si waveguide and coupling loss with optical flat polarization-maintaining fiber (PMF) are measured. For whole C-band (i.e., λ~1520-1565nm), the propagation loss of TE mode is measured to ~6.45±0.3dB/cm. The coupling loss with optical flat PMF is ~3.4dB/facet for TE mode. To the best of our knowledge, the propagation loss is among the best reported results. This communication discusses the factors reducing the propagation loss, especially the effect of the refractive index contrast. Compared to the SiO2 cladding, poly-Si waveguide with SiON cladding exhibits lower propagation loss.

Propagation losses in undoped and n-doped polycrystalline silicon wire waveguides.

Polycrystalline silicon (polySi) wire waveguides with width ranging from 200 to 500 nm are fabricated by solid-phase crystallization (SPC) of deposited amorphous silicon (a-Si) on SiO(2) at a maximum temperature of 1000 degrees C. The propagation loss at 1550 nm decreases from 13.0 to 9.8 dB/cm with the waveguide width shrinking from 500 to 300 nm while the 200-nm-wide waveguides exhibit quite large loss (>70 dB/cm) mainly due to the relatively rough sidewall of waveguides induced by the polySi dry etch. By modifying the process sequence, i.e., first patterning the a-Si layer into waveguides by dry etch and then SPC, the sidewall roughness is significantly improved but the polySi crystallinity is degraded, leading to 13.9 dB/cm loss in the 200-nm-wide waveguides while larger losses in the wider waveguides. Phosphorus implantation causes an additional loss in the polySi waveguides. The doping-induced optical loss increases relatively slowly with the phosphorus concentration increasing up to 1 x 10(18) cm(-3), whereas the 5 x 10(18) cm(-3) doped waveguides exhibit large loss due to the dominant free carrier absorption. For all undoped polySi waveguides, further 1-2 dB/cm loss reduction is obtained by a standard forming gas (10%H(2) + 90%N(2)) annealing owing to the hydrogen passivation of Si dangling bonds present in polySi waveguides, achieving the lowest loss of 7.9 dB/cm in the 300-nm-wide polySi waveguides. However, for the phosphorus doped polySi waveguides, the propagation loss is slightly increased by the forming gas annealing.

Ultra-high order ring resonator system with sharp transmission peaks

We propose a relay ring resonator structure which comprises multiple cascaded microring resonators, in which the drop waveguide of a microring resonator is also the input waveguide of the subsequent microring resonator, and so forth. Thus, the transmission response of the relay ring resonator structure has sharp peaks, high out-of-band rejection ratios, and long group delays. A relay ring resonator structure comprising 90 microrings is fabricated on silicon nitride wire waveguides. The simulation and experimental results are in good agreement.

Laterally-current-injected light-emitting diodes based on nanocrystalline-Si/SiO 2 superlattice

Laterally electrically-pumped Si light-emitting diodes (LEDs) based on truncated nanocrystalline-Si (nc-Si)/SiO2 quantum wells are fabricated with complementary-metal-semiconductor-oxide (CMOS) process. Visible electroluminescence (EL) can be observed under a reverse bias larger than ~6 V. The light emission would probably originate from the spontaneous hot-carrier relaxations within the conduction and the valance bands when the device is sufficiently reverse-biased. The EL spectral profile is found to be modulated by varying structure parameters of the interdigitated finger electrodes. Up to ~20 times EL intensity enhancement is achieved as compared to vertical-current-injection LED prepared using the same material system. Based on the lateral-current-injection scheme, a Si/SiO2 MQW LED with Fabry-Perot (FP) microcavity and an on-chip waveguided LED that emits at 1.55-µm are proposed.

Ge waveguide photodetectors with responsivity roll-off beyond 1620 nm using localized stressor

We report a novel Ge waveguide photodetector and the fabrication on silicon-on-insulator (SOI) platform. Localized stressor structures were incorporated to tune the responsivity roll-off wavelength. With the localized stressor structure, the roll-off in responsivity is found to be red-shifted from 1520 nm to beyond 1620 nm, i.e., a flat responsivity over the entire C- and L-band is obtained. This technique makes Ge a promising material for fabricating monolithic high-responsivity receivers covering the entire C- and L-band fiber optic communications.

Dependences of photoluminescence from P-implanted epitaxial Ge

A systematic investigation has been carried out to study the influence of various annealings and implantations on the photoluminescence (PL) properties of phosphorus (P)-implanted Ge epitaxial films on Si substrate. For un-capped Ge samples, rapid thermal annealing (RTA) at 700 °C for 300 seconds yields the strongest PL emission peaked at 1550 nm. The influence of employing various capping layers (i.e., SiO(2), Si(3)N(4), and α-Si ) on the PL properties has been investigated. The capping layers are found to effectively decrease the dopant loss, leading to a significant PL enhancement. Si(3)N(4) is found to be the most efficient capping layer to prevent dopant out-diffusion and thus lead to strongest PL. Furthermore, it has been found that capping layers not only enhance the PL intensities but also make PL emission peak red- and blue- shift, depending on the stress type of the capping films. The effect of implantation dose on the PL has been also investigated.

Thermo-optical tunable planar ridge microdisk resonator in silicon-on-insulator

In this work, we design and demonstrate planar ridge microdisk resonators in silicon-on-insulator, which assemble the advantages of microring and microdisk resonators. The dependences of resonator optical modes on the slab thickness and the waveguide-to-resonator coupling gap are investigated. The highest Q-factor obtained is ~4 × 10(5). Using the thermo-optical effect, we attain a resonance wavelength tuning efficiency of ~66.5 pm/mW. We also compare the transmission spectra measured by using wavelength-scanning method and voltage-scanning method and show potential application for the adopted voltage-scanning method.

Evolution of modes in a metal-coated nano-fiber.

We report on the evolution of modes in cylindrical metal/dielectric systems. The transition between surface plasmon polaritons and localized modes is documented in terms of the real and imaginary parts of the effective refractive index as a function of geometric and optical parameters. We show the evolution process of SPP and localized modes. New phenomena of coupling between SPP and core-like modes, and of mode gap and super-long surface plasmon polaritons are found and discussed. We conclude that both superluminal light and slow light can be solutions of metallically coated dielectric fibers.