M.G. Hussein

Reduction of hydrogen-induced optical losses of plasma-enhanced chemical vapor deposition silicon oxynitride by phosphorus doping and heat treatment

Plasma enhanced chemical vapor deposition phosphoros-doped silicon oxynitride (SiON) layers with a refractive index of 1.505 were deposited from

Optimization of plasma-enhanced chemical vapor deposition silicon oxynitride layers for integrated optics applications

N_{2}O

Characterization of thermally treated PECVD SiON layers.

, 2%

Stability of low refractive index PECVD silicon oxynitride layers

SiH_{4}/N_{2}

Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications

, and 5%

B/P doping in application of silicon oxynitride based integrated optics

PH_{3}/Ar

Influence of phosphorus doping on hydrogen content and optical losses in PECVD silicon oxynitride

gaseous mixtures. The

Fabrication and characterization of PECVD phosphorus-doped silicon oxynitride layers for integrated optics application

PH_{3}/Ar

Planar waveguide devices on a silicon compatible technology platform

flow rate was varied to investigate the effect of the dopant to the layer properties. We studied the compositions and the chemical environment of phosphorus, silicon, oxygen, nitrogen and hydrogen in these layers by using x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The number of N-H and O-H bonds, which are responsible for optical losses around 1.55 and 1.3 μm, decreases in the as-deposited layers with increasing phosphorus concentration. Furthermore, the bonded hyrogen in all P-doped layers has been eliminated after annealing at a temperature significantly lower than required for undoped silicon oxynitride layers, that is so to say 1000°C instead of 1150°C. The resulting optical loss in the entire third telecommunication window was well below 0.2dB/cm, making P-doped SiON an attractive material for demanding integrated optics applications.