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Featured researches published by Maixing Han.


IEEE Electron Device Letters | 2011

Organic Programmable Resistance Memory Device Based on

Xin Liu; Zhuoyu Ji; Liwei Shang; Hong Wang; Yingping Chen; Maixing Han; Congyan Lu; Ming Liu; Junning Chen

In this letter, an organic memory cell based on tris(8-hydroxyquinolinato)aluminum doped with gold nanoparticles is reported. The device can achieve good resistive switching properties, such as a high on/off current ratio of about 104, and good retention (4 h at 0.1 V). The device remains in either state even after the power has been turned off and shows a good stability under stress test. The current-voltage characteristics are comprehensively investigated, and a possible mechanism is proposed and well fitted with the experiment data. The results show that the organic memory devices have promising potentials for future flexible electronic systems.


IEEE Transactions on Electron Devices | 2011

\hbox{Au/Alq}_{3}/\hbox{gold-nanoparticle/Alq}_{3}/\hbox{Al}

Liwei Shang; Zhuoyu Ji; Hong Wang; Yingpin Chen; Congyan Lu; Xin Liu; Maixing Han; Ming Liu

There are two critical issues involved in voltages of organic thin-film transistors (OTFTs), i.e., high operating voltages Vop and random distributed threshold voltages VTH, which lead to high power consumption and unreliable logic function in organic integrated circuits, respectively. This paper demonstrates that both issues can be solved in a single OTFT device by using very thin insulator films. The operating voltages could be reduced to be less than 3 V, without lowering the mobility and the on/off ratio. Using light-enhanced bias stress effect, the threshold voltages can be tuned into the range of -4 to 4 V in OTFTs with SiO2 or Al2O3 as dielectric films, demonstrating that light-enhanced bias stress effect in OTFTs is independent of the dielectric material. The ΔVTH/Vop ratio is about 3, which is one of the largest threshold-voltage-shifting ratios. It is found that the threshold voltage shifting has a linear relationship with the bias voltage and the light illumination time. This tuning technology is a post fabrication and noninvasive method with negligible influence on the mobility and on/off current ratios.


ieee international nanoelectronics conference | 2010

Structure

Zhuoyu Ji; Ming Liu; Liwei Shang; Xinghua Liu; Hong Wang; Yingping Chen; Maixing Han

Low dimensional molecular crystals of Ni[TCNQ]<inf>2</inf>(H<inf>2</inf>O)<inf>2</inf> was controlled synthesized by water in large area. Based on the accurate control of the reaction, the nanorods assembled in bundle clusters The nanorods have an average radius at ∼450 nm, with the length at 5 micrometers.


ieee international conference on solid-state and integrated circuit technology | 2010

Threshold Voltage Tuning of Low-Voltage Organic Thin-Film Transistors

Zhuoyu Ji; Lijuan Zhen; Liwei Shang; Ming Liu; Hong Wang; Xin Liu; Maixing Han

Under white-light irradiation, thin film transistors based on copper phthalocyanine (CuPc) exhibited obvious hysteresis effects when applying bi-directional sweeping gate voltage, the hysteresis window comes up to 32 V. This hysteresis effect is the result of those accumulated photogenerated carriers trapped in the interface, which proposed a feasible way to detect the state of the interface between organic functional materials and the dielectric layer.


Organic Electronics | 2011

Self-assembly of low dimensional organic nanomaterials based on Ni(TCNQ) 2 (H 2 O) 2

Hong Wang; Zhuoyu Ji; Liwei Shang; Yingping Chen; Maixing Han; Xin Liu; Yingquan Peng; Ming Liu


Archive | 2012

Detecting the interface state of organic thin-film transistors through hysteresis characteristics

Ming Liu; Maixing Han; Zhuoyu Ji; Liwei Shang; Xin Liu; Hong Wang


Archive | 2012

Nonvolatile nano-crystal floating gate OFET memory with light assisted program

Ming Liu; Hong Wang; Zhuoyu Ji; Liwei Shang; Yingping Chen; Yanhua Wang; Maixing Han; Xin Liu


Archive | 2012

Field effect transistor (FET) and preparation method thereof

Ming Liu; Hong Wang; Zhuoyu Ji; Liwei Shang; Yingping Chen; Yanhua Wang; Maixing Han; Xin Liu


Archive | 2012

An organic resistance random access memory unit, an organic resistance random access memory and a preparation method thereof

Ming Liu; Hong Wang; Zhuoyu Ji; Liwei Shang; Yingping Chen; Yanhua Wang; Maixing Han; Xin Liu


Archive | 2011

Ferroelectric type memory cell, memory and preparation method thereof

Xin Liu; Zhuoyu Ji; Liwei Shang; Hong Wang; Yingping Chen; Maixing Han; Congyan Lu; Ming Liu; Junning Chen

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Liwei Shang

Chinese Academy of Sciences

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Zhuoyu Ji

Chinese Academy of Sciences

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Hong Wang

Nanyang Technological University

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Ming Liu

Chinese Academy of Sciences

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Xin Liu

Chinese Academy of Sciences

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Yingping Chen

Chinese Academy of Sciences

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Congyan Lu

Chinese Academy of Sciences

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Changqing Xie

Chinese Academy of Sciences

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Dongmei Li

Chinese Academy of Sciences

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