Yingping Chen

Organic Programmable Resistance Memory Device Based on

In this letter, an organic memory cell based on tris(8-hydroxyquinolinato)aluminum doped with gold nanoparticles is reported. The device can achieve good resistive switching properties, such as a high on/off current ratio of about 104, and good retention (4 h at 0.1 V). The device remains in either state even after the power has been turned off and shows a good stability under stress test. The current-voltage characteristics are comprehensively investigated, and a possible mechanism is proposed and well fitted with the experiment data. The results show that the organic memory devices have promising potentials for future flexible electronic systems.

\hbox{Au/Alq}_{3}/\hbox{gold-nanoparticle/Alq}_{3}/\hbox{Al}

Low dimensional molecular crystals of Ni[TCNQ]<inf>2</inf>(H<inf>2</inf>O)<inf>2</inf> was controlled synthesized by water in large area. Based on the accurate control of the reaction, the nanorods assembled in bundle clusters The nanorods have an average radius at ∼450 nm, with the length at 5 micrometers.