Margaret A. Szymanowski

A Doherty amplifier for TD-SCDMA base station applications based on a single packaged dual-path integrated LDMOS power transistor

A Doherty power amplifier designed for TDSCDMA base station applications using a dual path two-stage IC with LDMOS technology has been demonstrated with excellent performance. The IC was fabricated using Freescale HV7IC technology and designed to cover both the 1.88–1.92 GHz and the 2.01–2.025 GHz TD-SCDMA bands. It delivers 70 W P3dB output power under CW signal. At 40 dBm output power or 8.5 dB output back off at P3dB gain compression, the Doherty power amplifier exhibits 30.2 dB power gain, 35.4% power added efficiency and −32.5 dBc raw ACPR under 7.1 dB PAR TDSCDMA modulation in the 2.01–2.025 GHz band. A −52.8 dBc ACPR was obtained after digital pre-distortion. This is the first Doherty power amplifier for the TD-SCDMA applications using a single dual-path integrated power transistor in over-molded plastic package reported to date.

A 900 MHz, 200 W silicon LDMOS power amplifier using integrated passive devices in a new over-molded plastic package

Existing and emerging cellular infrastructure standards require cost effective radio frequency (RF) power amplifiers. A 200 W LDMOS power amplifier (PA) that employs the unique design advantages of a new cost effective multi-chip over-molded plastic package combined with compact integrated passive devices (IPDs) is introduced in this paper. The amplifier is designed for the 900 MHz WCDMA base station market as a high power, low cost alternative to current PAs housed in metal ceramic packaging. This design represents the highest power level reported in an over-molded plastic package for 900 MHz cellular infrastructure applications.