Fernando A. Santos

A 900 MHz, 200 W silicon LDMOS power amplifier using integrated passive devices in a new over-molded plastic package

Existing and emerging cellular infrastructure standards require cost effective radio frequency (RF) power amplifiers. A 200 W LDMOS power amplifier (PA) that employs the unique design advantages of a new cost effective multi-chip over-molded plastic package combined with compact integrated passive devices (IPDs) is introduced in this paper. The amplifier is designed for the 900 MHz WCDMA base station market as a high power, low cost alternative to current PAs housed in metal ceramic packaging. This design represents the highest power level reported in an over-molded plastic package for 900 MHz cellular infrastructure applications.