Maria Anna Rzeznik
Dow Chemical Company
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Publication
Featured researches published by Maria Anna Rzeznik.
international microsystems, packaging, assembly and circuits technology conference | 2012
Elie H. Najjar; Leon R. Barstad; Jayaraju Nagarajan; Marc Lin; Maria Anna Rzeznik; Mark Lefebvre
A novel DC through hole filling process was formulated for high volume HDI and substrate core layer metallization production. The process yields high quality results over a wide current density range.
international microsystems, packaging, assembly and circuits technology conference | 2015
Nagarajan Jayaraju; Leon R. Barstad; Zukhra Niazimbetova; Maria Anna Rzeznik; Marc Lin; Dennis Yee
A novel DC blind micro via filling process was formulated for high volume HDI and substrate core layer metallization production. The process yields high quality results over a wide current density range. The process will be commercialized and it is anticipated that there will be substantial future growth in adoption of this technology to fill blind micro vias. This new chemistry in combination with optimized plating conditions and plating equipment can fill blind micro vias of various geometries. The plated copper has excellent physical and mechanical properties with a mirror bright surface. This formulation is intended to be used with either vertical or horizontal in-line jet impingement equipment in both panel and pattern modes. All organic additives can be easily monitored and controlled by conventional CVS analysis techniques.
international microsystems, packaging, assembly and circuits technology conference | 2016
Nagarajan Jayaraju; Leon R. Barstad; Don Cleary; Zukhra Niazimbetova; Tony Liao; Caroline Grand; Joanna Dziewiszek; Maria Anna Rzeznik; Marc Lin; Dennis Yee
Copper electroplating is a critical step in the fabrication of reliable High Density Interconnect (HDI) substrates intended for use as core layers in build-up applications. HDI substrates may contain vias and through holes having several different dimensions that make it challenging to meet via filling and hole throwing power (TP) requirements. A next generation Electrolytic Copper plating process was developed to fill blind micro vias and provide good TP in through holes to meet the demands of this market. Void-free bottom-up fill in via features with higher throwing power in through holes is achieved with this novel Direct Current (DC) copper electroplating product. The copper via fill plating bath is formulated with novel additives to operate over a wide range of operating conditions.
international microsystems, packaging, assembly and circuits technology conference | 2015
Feng Liu; Kristen M. Milum; Don Cleary; Maria Anna Rzeznik; Wenjia Zhou; Connie S. K. Kwong; Dennis Chit Yiu Chan; Vini S. W. Chum; Crystal Li; Dennis Yee; Jerry Chang; Katsuhiro Yoshida
This paper describes the development of a new ionic palladium catalyst, CIRCUPOSIT™6530 Catalyst, along with a tartrate-based horizontal electroless copper bath, CIRCUPOSIT™6550, to meet the performance demands of high-density-interconnect (HDI) and packaging (PKG) substrates in horizontal electroless copper plating. Implementation of the new ionic catalyst process is demonstrated through excellent coverage and reliability performance of through holes and microvias on HDI and PKG substrates following processing in horizontal equipment, as well as peel strength on low profile dielectric materials in the semi-additive process. Results also showed that the new CIRCUPOSIT™6530 Catalyst demonstrated stable performance during customer qualification.
Archive | 2013
Zukhra Niazimbetova; Maria Anna Rzeznik
Archive | 2012
Kristen M. Milum; Donald E. Cleary; Maria Anna Rzeznik
Archive | 2011
Zukhra l. Niazimbetova; Elie H. Najjar; Maria Anna Rzeznik; Erik Reddington
Archive | 2018
Lingli Duan; Chen Chen; Shaoguang Feng; Zukhra l. Niazimbetova; Maria Anna Rzeznik
Archive | 2017
Weijing Lu; Lingli Duan; Zukhra Niazimbetova; Chen Chen; Maria Anna Rzeznik
Archive | 2017
Weijing Lu; Lingli Duan; Zukhra Niazimbetova; Chen Chen; Maria Anna Rzeznik