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Mark L. Rinehimer

ON Semiconductor

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Publication

Featured researches published by Mark L. Rinehimer.

Archive | 2011

Superjunction structures for power devices and methods of manufacture

Joseph A. Yedinak; Mark L. Rinehimer; Praveen Muraleedharan Shenoy

Archive | 2009

Structures and Methods for Improving Trench-Shielded Semiconductor Devices and Schottky Barrier Rectifier Devices

Thomas E. Grebs; Mark L. Rinehimer; Joseph A. Yedinak; Dean E. Probst; Gary M. Dolny; John Lawrence Benjamin

Archive | 2002

Quick punch through IGBT having gate-controllable DI/DT and reduced EMI during inductive turn off

Joseph A. Yedinak; Jon Gladish; Sampat Shekhawat; Gary M. Dolny; Praveen Muraleedharan Shenoy; Douglas Lange; Mark L. Rinehimer

Archive | 2011

Double layer metal (DLM) power MOSFET

Rohit Dikshit; Mark L. Rinehimer; Michael D. Gruenhagen; Joseph A. Yedinak; Tracie Petersen; Ritu Sodhi; Dan Kinzer; Christopher L. Rexer; Fred C. Session

international reliability physics symposium | 2018

BV DSS (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs

Jifa Hao; Amartya Ghosh; Mark L. Rinehimer; Joe Yedinak; Muhammad A. Alam

Archive | 2012

Doppelschichtmetall- (DLM) Leistungs-MOSFET Doppelschichtmetall- (DLM) power MOSFET

Rohit Dikshit; Michael D. Gruenhagen; Daniel M. Kinzer; Tracie Petersen; Christopher L. Rexer; Mark L. Rinehimer; Fred Session; Ritu Sodhi; Joseph A. Yedinak

Archive | 2010

Strukturen und Verfahren zum Verbessern von Grabenabschirmungshalbleitervorrichtungen und Schottky-Barrierengleichrichtervorrichtungen Structures and methods for improving grave shield semiconductor devices and Schottky barrier rectifier devices

John Lawrence Benjamin; Gary M. Dolny; Thomas E. Grebs; Dean E. Probst; Mark L. Rinehimer; Joseph A. Yedinak

Archive | 2008

Superübergangsstrukturen für leistungsanordnungen und herstellungsverfahren

Jason Higgs; Hocheol Jang; Jinyoung Jung; Chang-wook Kim; Yongsub Kim; Jaegil Lee; Jonghun Lee; Jungkil Lee; Dwayne S. Reichl; Christopher L. Rexer; Mark L. Rinehimer; Joelle Sharp; Praveen Muraleedharan Shenoy; Qi Wang; Joseph A. Yedinak; Chong-Man Yun

Archive | 2008

Structures à superjonction pour dispositifs de puissance et procédés de fabrication

Jason Higgs; Hocheol Jang; Jinyoung Jung; Chang-wook Kim; Yongsub Kim; Jaegil Lee; Jonghun Lee; Jungkil Lee; Dwayne S. Reichl; Christopher L. Rexer; Mark L. Rinehimer; Joelle Sharp; Praveen Muraleedharan Shenoy; Qi Wang; Joseph A. Yedinak; Chong-Man Yun

Archive | 2002

Igbt mit schnellem punch-through mit gatesteuerbarem di/dt und verringerter emi während des induktiven ausschaltens

Gary M. Dolny; Jon Gladish; Douglas Lange; Mark L. Rinehimer; Sampat Shekhawat; Praveen Muraleedharan Shenoy; Joseph A. Yedinak

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Joseph A. Yedinak

Fairchild Semiconductor International

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Christopher L. Rexer

Harris Corporation

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Jon Gladish

Intersil

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Sampat Shekhawat

Intersil

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Dean E. Probst

ON Semiconductor

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Gary M. Dolny

Fairchild Semiconductor International

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John Lawrence Benjamin

Intersil

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Ritu Sodhi

International Rectifier

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Chong-Man Yun

Seoul National University

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Amartya Ghosh

ON Semiconductor

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