Mark S. Goorsky

Ultrahigh and Broad Spectral Photodetectivity of an Organic–Inorganic Hybrid Phototransistor for Flexible Electronics

The creation of new organic-inorganic phototransistors with high and broad spectral photosensitivity is reported. The extended charge transport and photoconductivity between the layers in the bilayer structure results in a notable detectivity of over 10(12) Jones and a linear dynamic range of over 100 dB at a broad spectral bandwidth across the UV-NIR range. Furthermore, the considerably reduced persistent photocurrent effect of In-Ga-Zn-O (IGZO)-based hybrid phototransistors is first demonstrated via an organic-inorganic bilayer approach.

Novel Strategy for One-Pot Synthesis of Gold Nanoplates on Carbon Nanotube Sheet As an Effective Flexible SERS Substrate

In this work, we demonstrate a novel route for one-pot synthesis of two-dimensional gold nanoplates (2-D AuNPLs) on carbon nanotube (CNT) sheet. Well-defined AuNPLs are grafted onto CNT sheet via a facile hydrothermal reduction process, during which bromine ions are employed as the surfactant for gold anisotropic growth. Scanning electron microscopy (SEM) shows large-scale AuNPLs with micrometer-scaled length and sub-100 nm thickness are deposited uniformly on the CNT sheet. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) results confirm the synthesized AuNPLs are single-crystalline with preferential {111} orientation. Based on the CNT sheet/AuNPLs hybrid, we have fabricated a flexible surface-enhanced Raman scattering (SERS) substrate, which can effectively detect the analyte Rhodamine 6G (Rh6G) at the concentration as low as 1 × 10-7 M. The excellent SERS performance of this novel flexible substrate is mainly attributed to nanoscaled gaps between the neighbors, large surface area with roughness, and their sharp edges and corners.

Heterogeneous Integration at Fine Pitch (≤ 10 µm) Using Thermal Compression Bonding

The scaling of package and circuit board dimensions is central to heterogeneous system integration. We describe our solderless direct metal-to-metal low pressure ( 20 MPa. The combined reduction of dielet interconnect pitch, dielet-to-dielet spacing and trace pitch will enable a Moores law for packaging.

Quasi-Two-Dimensional Metal Oxide Semiconductors Based Ultrasensitive Potentiometric Biosensors

Ultrasensitive field-effect transistor-based biosensors using quasi-two-dimensional metal oxide semiconductors were demonstrated. Quasi-two-dimensional low-dimensional metal oxide semiconductors were highly sensitive to electrical perturbations at the semiconductor-bio interface and showed competitive sensitivity compared with other nanomaterial-based biosensors. Also, the solution process made our platform simple and highly reproducible, which was favorable compared with other nanobioelectronics. A quasi-two-dimensional In2O3-based pH sensor showed a small detection limit of 0.0005 pH and detected the glucose concentration at femtomolar levels. Detailed electrical characterization unveiled how the devices parameters affect the biosensor sensitivity, and lowest detectable charge was extrapolated, which was consistent with the experimental data.

Direct visualization of thermal conductivity suppression due to enhanced phonon scattering near individual grain boundaries

Understanding the impact of lattice imperfections on nanoscale thermal transport is crucial for diverse applications ranging from thermal management to energy conversion. Grain boundaries (GBs) are ubiquitous defects in polycrystalline materials, which scatter phonons and reduce thermal conductivity (κ). Historically, their impact on heat conduction has been studied indirectly through spatially averaged measurements, that provide little information about phonon transport near a single GB. Here, using spatially resolved time-domain thermoreflectance (TDTR) measurements in combination with electron backscatter diffraction (EBSD), we make localized measurements of κ within few μm of individual GBs in boron-doped polycrystalline diamond. We observe strongly suppressed thermal transport near GBs, a reduction in κ from ∼1000 W m-1 K-1 at the center of large grains to ∼400 W m-1 K-1 in the immediate vicinity of GBs. Furthermore, we show that this reduction in κ is measured up to ∼10 μm away from a GB. A theoretical model is proposed that captures the local reduction in phonon mean-free-paths due to strongly diffuse phonon scattering at the disordered grain boundaries. Our results provide a new framework for understanding phonon-defect interactions in nanomaterials, with implications for the use of high-κ polycrystalline materials as heat sinks in electronics thermal management.

Probing Growth-Induced Anisotropic Thermal Transport in High-Quality CVD Diamond Membranes by Multifrequency and Multiple-Spot-Size Time-Domain Thermoreflectance

The maximum output power of GaN-based high-electron mobility transistors is limited by high channel temperature induced by localized self-heating, which degrades device performance and reliability. Chemical vapor deposition (CVD) diamond is an attractive candidate to aid in the extraction of this heat and in minimizing the peak operating temperatures of high-power electronics. Owing to its inhomogeneous structure, the thermal conductivity of CVD diamond varies along the growth direction and can differ between the in-plane and out-of-plane directions, resulting in a complex three-dimensional (3D) distribution. Depending on the thickness of the diamond and size of the electronic device, this 3D distribution may impact the effectiveness of CVD diamond in device thermal management. In this work, time-domain thermoreflectance is used to measure the anisotropic thermal conductivity of an 11.8 μm-thick high-quality CVD diamond membrane from its nucleation side. Starting with a spot-size diameter larger than the thickness of the membrane, measurements are made at various modulation frequencies from 1.2 to 11.6 MHz to tune the heat penetration depth and sample the variation in thermal conductivity. We then analyze the data by creating a model with the membrane divided into ten sublayers and assume isotropic thermal conductivity in each sublayer. From this, we observe a two-dimensional gradient of the depth-dependent thermal conductivity for this membrane. The local thermal conductivity goes beyond 1000 W/(m K) when the distance from the nucleation interface only reaches 3 μm. Additionally, by measuring the same region with a smaller spot size at multiple frequencies, the in-plane and cross-plane thermal conductivities are extracted. Through this use of multiple spot sizes and modulation frequencies, the 3D anisotropic thermal conductivity of CVD diamond membrane is experimentally obtained by fitting the experimental data to a thermal model. This work provides an improved understanding of thermal conductivity inhomogeneity in high-quality CVD polycrystalline diamond that is important for applications in the thermal management of high-power electronics.

Low temperature metal-metal bonding for heterogeneous integration and performance scaling

Au-Au based interconnect bonding (and Cu-Cu bonding) is advanced by addressing the roles of initial surface roughness, chemical mechanical polishing, bonding pressure and temperature. Focused ion beam sectioning through the bonded interface is used to determine grain growth, void evolution, and void faceting.

Selective-area growth of heavily n–doped GaAs nanostubs on Si(001) by molecular beam epitaxy

Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO2 mask act as a template for GaAs-on-Si selective-area growth (SAG) of nanostubs 120u2009nm tall and ≤100u2009nm in diameter. We investigate the influence of growth parameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAs growth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grown GaAs nanostubs by fabricating heterogeneous p+–Si/n+–GaAs p–n diodes.

Ultrahigh vacuum dc magnetron sputter-deposition of epitaxial Pd(111)/Al2O3(0001) thin films

Pd(111) thin films, ∼245u2009nm thick, are deposited on Al2O3(0001) substrates at ≈0.5Tm, where Tm is the Pd melting point, by ultrahigh vacuum dc magnetron sputtering of Pd target in pure Ar discharges. Auger electron spectra and low-energy electron diffraction patterns acquired in situ from the as-deposited samples reveal that the surfaces are compositionally pure 111-oriented Pd. Double-axis x-ray diffraction (XRD) ω-2θ scans show only the set of Pd 111 peaks from the film. In triple-axis high-resolution XRD, the full width at half maximum intensity Γω of the Pd 111 ω-rocking curve is 630u2009arc sec. XRD 111u2009pole figure obtained from the sample revealed six peaks 60°-apart at a tilt angles corresponding to Pd 111 reflections. XRD ϕ scans show six 60°-rotated 111 peaks of Pd at the same ϕ angles for 11[Formula: see text]3 of Al2O3 based on which the epitaxial crystallographic relationships between the film and the substrate are determined as [Formula: see text]ǁ[Formula: see text] with two in-plane orientations of [Formula: see text]ǁ[Formula: see text] and [Formula: see text]ǁ[Formula: see text]. Using triple axis symmetric and asymmetric reciprocal space maps, interplanar spacings of out-of-plane (111) and in-plane (11[Formula: see text]) are found to be 0.2242u2009±u20090.0003 and 0.1591u2009±u20090.0003u2009nm, respectively. These values are 0.18% lower than 0.2246u2009nm for (111) and the same, within the measurement uncertainties, as 0.1588u2009nm for (11[Formula: see text]) calculated from the bulk Pd lattice parameter, suggesting a small out-of-plane compressive strain and an in-plane tensile strain related to the thermal strain upon cooling the sample from the deposition temperature to room temperature. High-resolution cross-sectional transmission electron microscopy coupled with energy dispersive x-ray spectra obtained from the Pd(111)/Al2O3(0001) samples indicate that the Pd-Al2O3 interfaces are essentially atomically abrupt and dislocation-free. These results demonstrate the growth of epitaxial Pd thin films with (111) out-of-plane orientation with low mosaicity on Al2O3(0001).

Grazing-incidence small angle x-ray scattering, x-ray reflectivity, and atomic force microscopy: A combined approach to assess atomic-layer-deposited Al2O3 dielectric films

Al2O3 dielectric films deposited by atomic layer deposition (ALD) were characterized using grazing-incidence small angle x-ray scattering (GISAXS). Unique to this method, the diffuse scattering from surface and interface roughnesses was calculated with surface parameters (root mean square roughness σ, lateral correlation length ξ, and Hurst parameter h) obtained from atomic force microscopy and layer densities, surface grading, and interface roughness/grading obtained from specular x-ray reflectivity (XRR) simulation. Pore scattering was determined with the measured total diffuse scattering intensity subtracted by the simulated diffuse scattering from roughnesses, from which the pore size distribution was obtained. This GISAXS method was validated with the scanning electron microscopy result of a porous indium phosphide single layer and was applied to two Al2O3 dielectric single layers deposited with different ALD parameters. Both porous and nonporous Al2O3 layers were revealed. The pore size in the porou...