Markus Weyers

Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

We present the first report on the optical properties of dilute GaAS1-xNx alloys (0<x<0.015). The layers have been grown by plasma-assisted metalorganic chemical vapor deposition (MOCVD). The grown layers show a systematic red shift of the band-edge luminescence with increasing N content. The assignement of the photoluminescence to band-edge transitions and not to isolated N-N pair emission is verified by the characteristics of the optical absorption.

Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3

We present a letter on the growth of GaAs1−xNx alloys (0<x<0.016). The layers have been grown by metalorganic chemical vapor deposition at very low pressure (25 Pa). The nitrogen source NH3 has been decomposed in a remote microwave plasma, and uncracked triethylgallium and AsH3 were used. The N uptake into the layers shows a strong dependence on the growth temperature. The competition for the group V lattice sites leads to a reduction of the N content at higher AsH3 fluxes. The GaAsN layers show a strong red shift of the photoluminescence with increasing N content.

Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

The polarization of the in-plane electroluminescence of (0001) orientated (In)(Al)GaN multiple quantum well light emitting diodes in the ultraviolet-A and ultraviolet-B spectral range has been investigated. The intensity for transverse-electric polarized light relative to the transverse-magnetic polarized light decreases with decreasing emission wavelength. This effect is attributed to rearrangement of the valence bands at the Γ-point of the Brillouin zone with changing aluminum and indium mole fractions in the (In)(Al)GaN quantum wells. For shorter wavelength the crystal-field split-off hole band moves closer to the conduction band relative to the heavy and light hole bands and as a consequence the transverse-magnetic polarized emission becomes more dominant for deep ultraviolet light emitting diodes.

Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells

InGaN quantum wells were grown by metal organic vapor-phase epitaxy on polar (0 0 0 1), nonpolar (1 0  0) and on semipolar (1 0  2), (1 1  2), (1 0  1) as well as (2 0  1) oriented GaN substrates. The room-temperature photoluminescence (PL) and electroluminescence (EL) emission energies for quantum wells grown on different crystal orientations show large variations of up to 600 meV. The following order of the emission energy was found throughout the entire range of growth temperatures: (1 0  1) < (1 1  2) = (0 0 0 1) < (2 0  1) < (1 0  0) = (1 0  2). In order to differentiate between the effects of strain, quantum-confined stark effect (QCSE) and indium incorporation the experimental data were compared to k.p theory-based calculations for differently oriented InGaN QWs. The major contribution to the shift between (1 0  0) and (0 0 0 1) InGaN quantum wells can be attributed to the QCSE. The redshift between (1 0  0) and the semipolar (1 0  2) and (2 0  1) QWs can be attributed to shear and anisotropic strain affecting the valence band structure. Finally, for (1 1  2) and (1 0  1) the emission energy shift could be attributed to a significantly higher indium incorporation efficiency.

Passively mode-locked Yb:KLu(WO4)2 oscillators.

We demonstrate passive mode locking based on the novel monoclinic double tungstate crystal Yb:KLu(WO4)2. We report the shortest pulses ever produced with an Yb-doped tungstate laser using a semiconductor saturable absorber. A pulse duration of 81 fs has been achieved for an average power of 70 mW at 1046 nm. We compare the performance of the polarization oriented parallel to the Nm- and Np-crystallo-optic axes. Results in the femtosecond and picosecond regime are presented applying either Ti:sapphire or diode laser pumping. The great potential of Yb:KLu(WO4)2 as an active medium for ultrashort pulses is demonstrated for the first time, to our knowledge.

Structural and optical properties of nonpolar GaN thin films

A correlation between the structural and optical properties of GaN thin films grown in the [112¯0] direction has been established using transmission electron microscopy and cathodoluminescence spectroscopy. The GaN films were grown on an r-plane sapphire substrate, and epitaxial lateral overgrowth was achieved using SiO2 masks. A comparison between the properties of GaN directly grown on sapphire and GaN laterally grown over the SiO2 mask is presented. The densities and dimensions of the stacking faults vary significantly with a high density of short faults in the window region and a much lower density of longer faults in the wing region. The low-temperature luminescence spectra consist of peaks at 3.465 and 3.41eV, corresponding to emission from donor-bound excitons and basal-plane stacking faults, respectively. A correlation between the structural defects and the light emission characteristics is presented.

Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates

The performance characteristics of optically pumped laser heterostructures emitting in the UV-C spectral range between 272 and 279 nm are investigated. The laser heterostructures were grown by metal-organic vapor phase epitaxy on (0001) planar AlN/sapphire, epitaxially laterally overgrown (ELO) AlN/sapphire, and bulk AlN substrates with threading dislocation densities ranging from 2×1010 to 104 cm-2. We found that the defect density strongly affects the laser performance. The lowest pulse threshold energy density of 50 mJ/cm2 under resonant optical pumping condition was obtained for an AlGaN multiple quantum well laser grown pseudomorphically on low defect density bulk AlN substrate. Lasing was also observed for AlGaN MQW heterostructures grown on ELO AlN/sapphire templates. The laser emission in all lasers was TE polarized. However, no lasing was observed for heterostructures grown on high defect density AlN/sapphire.

High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm

Tensile-strained GaAsP quantum wells embedded in AlGaAs large optical cavity structures were studied. In the wavelength range between 715 and 790 nm, very high output power and excellent conversion efficiencies of broad-area lasers have been obtained.

Optical in-well pumping of a semiconductor disk laser with high optical efficiency

Optical in-well pumping is shown to lead to highly efficient operation of semiconductor disk-lasers using resonant absorption or using external optics. Pump radiation absorption of 70% at 940 nm is demonstrated for a laser emitting around 980 nm. Laser output power was 1.9 W with slope efficiencies up to 35% based on the incident power.

Mode-locked InGaAs-AlGaAs disk laser generating sub-200-fs pulses, pulse picking and amplification by a tapered diode amplifier.

Almost chirp-free pulses with a duration of 190 fs were achieved from a mode-locked semiconductor disk laser (SDL) emitting at approximately 1045 nm. Pulse shaping was different from the soliton-like mode-locking process known from lasers using dielectric gain media; passive amplitude modulation provided by a fast saturable absorber was essential. The spectrum of the absorber had to be matched to the gain spectrum within a few nm. A tapered diode amplifier was demonstrated to be a device for both picking and amplifying SDL pulses. The pulse repetition rate of the SDL output was reduced from 3 GHz to 47 MHz.