Tim Wernicke

Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells

InGaN quantum wells were grown by metal organic vapor-phase epitaxy on polar (0 0 0 1), nonpolar (1 0  0) and on semipolar (1 0  2), (1 1  2), (1 0  1) as well as (2 0  1) oriented GaN substrates. The room-temperature photoluminescence (PL) and electroluminescence (EL) emission energies for quantum wells grown on different crystal orientations show large variations of up to 600 meV. The following order of the emission energy was found throughout the entire range of growth temperatures: (1 0  1) < (1 1  2) = (0 0 0 1) < (2 0  1) < (1 0  0) = (1 0  2). In order to differentiate between the effects of strain, quantum-confined stark effect (QCSE) and indium incorporation the experimental data were compared to k.p theory-based calculations for differently oriented InGaN QWs. The major contribution to the shift between (1 0  0) and (0 0 0 1) InGaN quantum wells can be attributed to the QCSE. The redshift between (1 0  0) and the semipolar (1 0  2) and (2 0  1) QWs can be attributed to shear and anisotropic strain affecting the valence band structure. Finally, for (1 1  2) and (1 0  1) the emission energy shift could be attributed to a significantly higher indium incorporation efficiency.

Structural and optical properties of nonpolar GaN thin films

A correlation between the structural and optical properties of GaN thin films grown in the [112¯0] direction has been established using transmission electron microscopy and cathodoluminescence spectroscopy. The GaN films were grown on an r-plane sapphire substrate, and epitaxial lateral overgrowth was achieved using SiO2 masks. A comparison between the properties of GaN directly grown on sapphire and GaN laterally grown over the SiO2 mask is presented. The densities and dimensions of the stacking faults vary significantly with a high density of short faults in the window region and a much lower density of longer faults in the wing region. The low-temperature luminescence spectra consist of peaks at 3.465 and 3.41eV, corresponding to emission from donor-bound excitons and basal-plane stacking faults, respectively. A correlation between the structural defects and the light emission characteristics is presented.

Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates

The performance characteristics of optically pumped laser heterostructures emitting in the UV-C spectral range between 272 and 279 nm are investigated. The laser heterostructures were grown by metal-organic vapor phase epitaxy on (0001) planar AlN/sapphire, epitaxially laterally overgrown (ELO) AlN/sapphire, and bulk AlN substrates with threading dislocation densities ranging from 2×1010 to 104 cm-2. We found that the defect density strongly affects the laser performance. The lowest pulse threshold energy density of 50 mJ/cm2 under resonant optical pumping condition was obtained for an AlGaN multiple quantum well laser grown pseudomorphically on low defect density bulk AlN substrate. Lasing was also observed for AlGaN MQW heterostructures grown on ELO AlN/sapphire templates. The laser emission in all lasers was TE polarized. However, no lasing was observed for heterostructures grown on high defect density AlN/sapphire.

Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates. The epitaxial layers were grown pseudomorphically by metalorganic chemical vapor deposition on (0001) sapphire substrates. Stimulated emission was observed at wavelengths of 256 nm and 249 nm with thresholds of 61 kW/cm2 and 95 kW/cm2 at room temperature, respectively. The thresholds are comparable to the reported state-of-the-art AlGaN-based MQW DUV lasers grown on bulk AlN substrates emitting at 266 nm. These low thresholds are attributed to the optimization of active region and waveguide layer as well as the use of high-quality AlN/sapphire templates. The stimulated emission above threshold was dominated by transverse-electric polarization. This work demonstrates the potential candidacy of sapphire substrates for DUV diode lasers.

Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

The design and Mg-doping profile of AlN/Al0.7Ga0.3N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm2.

Highly conductive n-AlxGa1−xN layers with aluminum mole fractions above 80%

Silicon doping of AlxGa1−xN layers with high aluminum mole fractions (0.8 < x < 1) was studied. The AlGaN:Si layers were pseudomorphically grown by metalorganic vapor phase epitaxy on low defect density epitaxially laterally overgrown AlN/sapphire templates. The effects of SiH4/III ratio and aluminum content on the resistivity, the carrier concentration, and the mobility have been investigated. By variation of the SiH4/III ratio during the growth of AlxGa1−xN:Si layers, a recorded low resistivity of Al0.81Ga0.19N:Si was obtained with 0.026 Ω cm. The resistivity increases exponentially with increasing aluminum content to 3.35 Ω cm for Al0.96Ga0.04N, and the optimum SiH4/III ratio is shifted towards lower values. Hall effect measurements show that the increase of the resistivity with increasing aluminum mole fraction is mainly caused by a decrease of the carrier density. The optimized Al0.81Ga0.19N:Si exhibits a carrier concentration of 1.5 × 1019 cm−3 and a mobility of the carriers of 16.5 cm2 V−1 s−1.

Surface diffusion and layer morphology of ((112¯2)) GaN grown by metal-organic vapor phase epitaxy

(112¯2) GaN layers were grown by metal-organic vapor phase epitaxy on (112¯2) bulk GaN substrates and (101¯0) sapphire substrates. The growth temperature was varied between 950 and 1050 °C and the total reactor pressure between 50 and 600 mbar. The growth conditions show a strong impact on the yellow band luminescence properties, while weak impact on the threading dislocation density was observed. The layer morphologies exhibit undulations with two periods along GaN [11¯00] and one period along [112¯3¯]. The different period lengths are connected to anisotropic adatom surface diffusion lengths. Arrow like features on the surface originate from the interference of the undulations along [112¯3¯] and [11¯00].

A-plane GaN epitaxial lateral overgrowth structures: Growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy

The distinctly different growth domains of a-plane epitaxial lateral overgrown GaN on stripe masks oriented along [0110] direction were directly visualized by highly spatially and spectrally resolved cathodoluminescence microscopy. Clear cut microscopic regions dominated by differing individual peak wavelengths originating from either basal plane stacking faults, prismatic stacking faults, impurity related donor-acceptor pair or (D0,X) emission are explicitly correlated to the different growth domains. The luminescence in the domains grown in [0001] direction over the mask [epitaxial lateral overgrown wings] is dominated by the intense and sharp (D0,X) emission at 3.471eV. Here, no luminescence originating from morphological defects is found over several micrometers. This evidences the excellent material quality of the a-plane GaN, which is fully relaxed at the surface of the wings.

Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs

A reduction of the threading dislocation density in AlN layers on a sapphire from 1010 cm-2 to 109 cm-2 was achieved by applying epitaxial lateral overgrowth (ELO) of patterned AlN and sapphire templates. By varying the growth temperature, it is possible to influence the lateral growth rate and modulate the thickness before coalescence. With a two-step growth at two different temperatures, up to 11-μm thick crackfree layers were achieved. Using these ELO AlN templates, the light emitting diode (LED) output power was >;1 mW dc at 295 nm and ~ 4mW at 324 nm which is a significant increase compared to planar templates. The usefulness of modulated ELO AlN templates for ultraviolet LEDs has thus been validated.

Improved injection efficiency in 290 nm light emitting diodes with Al(Ga)N electron blocking heterostructure

The effect of different Al(Ga)N electron blocking heterostructures (EBH) on the emission spectra and light output power of 290 nm light emitting diodes (LEDs) has been investigated. The carrier injection and internal quantum efficiency of the LEDs is simulated and compared to electroluminescence measurements. The highest light output power has been found for LEDs with an Mg-doped AlN/Al0.7Ga0.3N EBH with an AlN layer thickness >3 nm. The output power of these LEDs was 8.5-times higher compared to LEDs without EBH. This effect is attributed to an improved carrier injection and confinement which prevents electron leakage into the p-doped region of the LED with a simultaneously enhanced hole injection into the active region.