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Dive into the research topics where Martin Revitz is active.

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Featured researches published by Martin Revitz.


international electron devices meeting | 1989

A 45 GHz strained-layer SiGe heterojunction bipolar transister fabricated with low temperature epitaxy

S.E. Fischer; R.K. Cook; Ronald W. Knepper; Russell C. Lange; K. Nummy; David C. Ahlgren; Martin Revitz; Bernard S. Meyerson

Strained-layer Si-SiGe heterojunction bipolar transistors with f/sub t/ as high as 45 GHz are reported. The device structure incorporates a 65 nm SiGe graded base, with a peak Ge concentration of 11%, grown by UHV/CVD (ultrahigh vacuum/chemical vapor deposition) low-temperature epitaxy. The devices show a 10* collector current enhancement and a 30% reduction in base transit time to 2.6 ps.<<ETX>>


Archive | 1994

Method for making heterojunction bipolar transistor with self-aligned retrograde emitter profile

David C. Ahlgren; Jack O. Chu; Martin Revitz; Paul Ronsheim; Mary J. Saccamango; David Sunderland


Archive | 1980

Method of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline silicon

James R. Gardiner; William Aaron Pliskin; Martin Revitz; Joseph F. Shepard


Archive | 1978

Method of manufacturing a metal-insulator-semiconductor utilizing a multiple stage deposition of polycrystalline layers

James R. Gardiner; William Aaron Pliskin; Martin Revitz; Joseph F. Shepard


Archive | 1989

Method of fabricating a narrow base transistor

Jeffrey L. Blouse; Inge Grumm Fulton; Russell C. Lange; Bernard S. Meyerson; Karen A. Nummy; Martin Revitz; Robert Rosenberg


Archive | 1980

Method for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate

Robert Forbell Bartholomew; Paul Louis Garbarino; James R. Gardiner; Martin Revitz; Joseph F. Shepard


Archive | 1978

Making semiconductor structure with improved phosphosilicate glass isolation

Paul Louis Garbarino; Martin Revitz; Joseph F. Shepard


Archive | 1985

Method for passivating an undercut in semiconductor device preparation

David C. Ahlgren; William H. Ma; Martin Revitz


Archive | 1991

Narrow base transistor and method of fabricating same

Jeffrey L. Blouse; Inge Grumm Fulton; Russell C. Lange; Bernard S. Meyerson; Karen A. Nummy; Martin Revitz; Robert Rosenberg


Archive | 1980

Double polysilicon contact structure and process

James R. Gardiner; Stanley R. Makarewicz; Martin Revitz; Joseph F. Shepard

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