Martin Revitz
IBM
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Featured researches published by Martin Revitz.
international electron devices meeting | 1989
S.E. Fischer; R.K. Cook; Ronald W. Knepper; Russell C. Lange; K. Nummy; David C. Ahlgren; Martin Revitz; Bernard S. Meyerson
Strained-layer Si-SiGe heterojunction bipolar transistors with f/sub t/ as high as 45 GHz are reported. The device structure incorporates a 65 nm SiGe graded base, with a peak Ge concentration of 11%, grown by UHV/CVD (ultrahigh vacuum/chemical vapor deposition) low-temperature epitaxy. The devices show a 10* collector current enhancement and a 30% reduction in base transit time to 2.6 ps.<<ETX>>
Archive | 1994
David C. Ahlgren; Jack O. Chu; Martin Revitz; Paul Ronsheim; Mary J. Saccamango; David Sunderland
Archive | 1980
James R. Gardiner; William Aaron Pliskin; Martin Revitz; Joseph F. Shepard
Archive | 1978
James R. Gardiner; William Aaron Pliskin; Martin Revitz; Joseph F. Shepard
Archive | 1989
Jeffrey L. Blouse; Inge Grumm Fulton; Russell C. Lange; Bernard S. Meyerson; Karen A. Nummy; Martin Revitz; Robert Rosenberg
Archive | 1980
Robert Forbell Bartholomew; Paul Louis Garbarino; James R. Gardiner; Martin Revitz; Joseph F. Shepard
Archive | 1978
Paul Louis Garbarino; Martin Revitz; Joseph F. Shepard
Archive | 1985
David C. Ahlgren; William H. Ma; Martin Revitz
Archive | 1991
Jeffrey L. Blouse; Inge Grumm Fulton; Russell C. Lange; Bernard S. Meyerson; Karen A. Nummy; Martin Revitz; Robert Rosenberg
Archive | 1980
James R. Gardiner; Stanley R. Makarewicz; Martin Revitz; Joseph F. Shepard