Russell C. Lange

A 45 GHz strained-layer SiGe heterojunction bipolar transister fabricated with low temperature epitaxy

Strained-layer Si-SiGe heterojunction bipolar transistors with f/sub t/ as high as 45 GHz are reported. The device structure incorporates a 65 nm SiGe graded base, with a peak Ge concentration of 11%, grown by UHV/CVD (ultrahigh vacuum/chemical vapor deposition) low-temperature epitaxy. The devices show a 10* collector current enhancement and a 30% reduction in base transit time to 2.6 ps.<<ETX>>

Advancing the state of the art in high-performance logic and array technology

High-speed silicon bipolar technology continues to meet the demands of integrated circuits for mainframe computers. IBIVI has developed an advanced bipolar logic and highspeed array technology for Its Enterprise System/9000TM systems. This technology, codenamed ATX-4, is composed of trench-Isolated, doubie-polyslilcon self-aligned bipolar devices, and has four fully pianarized wiring levels with interievel connecting studs. Chip fabrication has been implemented In l-fxm ground rules and Is In full-scale manufacturing. ATX-4 represents a significant advance in providing higher-speed and lower-power logic at increased levels of integration compared with that of the ATX-1 technology used In previous generations. An overview of the design and integration of ATX-4 Is discussed.