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Dive into the research topics where Russell C. Lange is active.

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Featured researches published by Russell C. Lange.


international electron devices meeting | 1989

A 45 GHz strained-layer SiGe heterojunction bipolar transister fabricated with low temperature epitaxy

S.E. Fischer; R.K. Cook; Ronald W. Knepper; Russell C. Lange; K. Nummy; David C. Ahlgren; Martin Revitz; Bernard S. Meyerson

Strained-layer Si-SiGe heterojunction bipolar transistors with f/sub t/ as high as 45 GHz are reported. The device structure incorporates a 65 nm SiGe graded base, with a peak Ge concentration of 11%, grown by UHV/CVD (ultrahigh vacuum/chemical vapor deposition) low-temperature epitaxy. The devices show a 10* collector current enhancement and a 30% reduction in base transit time to 2.6 ps.<<ETX>>


Ibm Journal of Research and Development | 1992

Advancing the state of the art in high-performance logic and array technology

Karen Hill Brown; Douglas Arthur Grose; Russell C. Lange; Tak H. Ning; Paul Anthony Totta

High-speed silicon bipolar technology continues to meet the demands of integrated circuits for mainframe computers. IBIVI has developed an advanced bipolar logic and highspeed array technology for Its Enterprise System/9000TM systems. This technology, codenamed ATX-4, is composed of trench-Isolated, doubie-polyslilcon self-aligned bipolar devices, and has four fully pianarized wiring levels with interievel connecting studs. Chip fabrication has been implemented In l-fxm ground rules and Is In full-scale manufacturing. ATX-4 represents a significant advance in providing higher-speed and lower-power logic at increased levels of integration compared with that of the ATX-1 technology used In previous generations. An overview of the design and integration of ATX-4 Is discussed.


Archive | 1988

Process of making BiCMOS devices having closely spaced device regions

Shao-Fu S. Chu; San-Mei Ku; Russell C. Lange; Joseph F. Shephard; Paul J. Tsang; Wen-Yuan Wang


Archive | 1991

METHOD FOR CONTROLLING INTERFACIAL OXIDE AT A POLYCRYSTALLINE/MONOCRYSTALLINE SILICON INTERFACE

Robert K. Cook; Ronald W. Knepper; Subodh Keshav Kulkarni; Russell C. Lange; Paul Ronsheim; Seshadri Subbanna; Manu Jamnadas Tejwani; Bob H. Yun


Archive | 1984

High density one device memory cell arrays

Russell C. Lange; Roy Edwin Scheuerlein


Archive | 1989

Method of fabricating a narrow base transistor

Jeffrey L. Blouse; Inge Grumm Fulton; Russell C. Lange; Bernard S. Meyerson; Karen A. Nummy; Martin Revitz; Robert Rosenberg


Archive | 1991

Narrow base transistor and method of fabricating same

Jeffrey L. Blouse; Inge Grumm Fulton; Russell C. Lange; Bernard S. Meyerson; Karen A. Nummy; Martin Revitz; Robert Rosenberg


Archive | 1984

Method for forming narrow images on semiconductor substrates

Cheryl Beth Field; Russell C. Lange


Archive | 1983

One-device random access memory cell having enhanced capacitance

Russell C. Lange


Archive | 1985

High density one device memory

Roy Edwin Scheuerlein; Russell C. Lange

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