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Mauder Anton

Infineon Technologies

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Publication

Featured researches published by Mauder Anton.

Archive | 2005

Leistungshalbleiterbauelement mit sanftem Abschaltverhalten

Mauder Anton; Schulze Hans-Joachim

Archive | 2003

Verfahren zur Herstellung eines robusten Halbleiterbauelements

Mauder Anton; Schulze Hans-Joachim

Archive | 2002

IGBT has a region of first conductivity consisting of two independently doped regions originating from the second metallization consisting of a highly doped flat region and a low doped diffused or epitaxially produced region

Mauder Anton; Huesken Holger; Laska Thomas; Porst Alfred; Schaeffer Carsten; Schmidt Thomas; Pfirsch Frank

Archive | 2008

Randabschluss für Leistungshalbleiterbauelement und für Diode sowie Verfahren zur Herstellung einer n-leitenden Zone für einen solchen Randabschluss

Mauder Anton; Schulze Hans-Joachim; Niedernostheide Franz-Josef; Falck Elmar

Archive | 2007

Verfahren zur Herstellung eines vertikalen MOS-Halbleiterbauelementes mit dünner Dielektrikumsschicht und tiefreichenden vertikalen Abschnitten

Rueb Michael; Schaefer Herbert; Willmeroth Armin; Mauder Anton; Schulze Hans-Joachim; Sedlmaier Stefan; Pfirsch Frank; Hirler Franz; Pippan Manfred; Weber Hans; Rupp Roland

Archive | 1999

Kompensationsbauelement und Verfahren zu dessen Herstellung

Mauder Anton; Schulze Hans-Joachim; Deboy Gerald; Strack Helmut

Archive | 2004

Doping process used in the production of a transistor, IGBT, thyristor or diode comprises preparing a semiconductor body, producing crystal defects in the body, introducing hydrogen ions into the body, and heat treating

Tihanyi Jenoe; Schulze Hans-Joachim; Mauder Anton; Strack Helmut

Archive | 2014

HALBLEITERVORRICHTUNG MIT EINEM RANDBEREICH UND VERFAHREN ZUR HERSTELLUNG EINER HALBLEITERVORRICHTUNG

Schulze Hans-Joachim; Mauder Anton; Hirler Franz

Archive | 2010

Leistungshalbleiterbauelement mit vertikaler Gatezone und Verfahren zur Herstellung desselben

Mauder Anton; Schulze Hans-Joachim

Archive | 2001

Avalanche resistant semiconductor component with body of one conductivity and surface zone of other conductivity

Mauder Anton

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Collaboration

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Schulze Hans-Joachim

Infineon Technologies

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Hirler Franz

Siemens

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Strack Helmut

Infineon Technologies

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Pfirsch Frank

Infineon Technologies

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Sedlmaier Stefan

Infineon Technologies

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Rupp Roland

Infineon Technologies

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Willmeroth Armin

Infineon Technologies

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Berger Rudolf

Infineon Technologies

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Laven Johannes Georg

Infineon Technologies

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Lehnert Wolfgang

Infineon Technologies

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