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Pfirsch Frank

Infineon Technologies

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Publication

Featured researches published by Pfirsch Frank.

Archive | 2002

IGBT has a region of first conductivity consisting of two independently doped regions originating from the second metallization consisting of a highly doped flat region and a low doped diffused or epitaxially produced region

Mauder Anton; Huesken Holger; Laska Thomas; Porst Alfred; Schaeffer Carsten; Schmidt Thomas; Pfirsch Frank

Archive | 2007

Verfahren zur Herstellung eines vertikalen MOS-Halbleiterbauelementes mit dünner Dielektrikumsschicht und tiefreichenden vertikalen Abschnitten

Rueb Michael; Schaefer Herbert; Willmeroth Armin; Mauder Anton; Schulze Hans-Joachim; Sedlmaier Stefan; Pfirsch Frank; Hirler Franz; Pippan Manfred; Weber Hans; Rupp Roland

Archive | 2002

Halbleiterbauelement mit hoher Avalanchefestigkeit und dessen Herstellungsverfahren

Pfirsch Frank; Auerbach Franz

Archive | 2001

CONTROLLABLE SEMICONDUCTOR ELEMENT WITH A GATE SERIES RESISTOR

Pfirsch Frank

Archive | 1992

Thyristor with adjustable breakover voltage, and a process for manufacturing it

Schulze Hans-Joachim; Mitlehner Heinz; Pfirsch Frank

Archive | 2009

Verfahren zum Herstellen eines Halbleiterkörpers mit einer Rekombinationszone, Halbleiterbauelement mit einer Rekombinationszone und Verfahren zum Herstellen eines solchen Halbleiterbauelements

Pfirsch Frank; Schulze Hans-Joachim

Archive | 2002

Power semiconductor component for reverse blocking has a semiconductor body forming a drift track for a mode of conductivity, a body zone for another mode of conductivity and a source zone for one mode of conductivity.

Pfirsch Frank

Archive | 2002

Vertikaler MOS-Transistor mit einer Druchbruchstruktur und Verfahren zu dessen Herstellung

Pfirsch Frank

Archive | 2002

Source down power MOSFET for use in semiconductors has a rear side with a p-type substrate for embedding an N-type source area short-circuited with the substrate via a non-rectifying connection

Pfirsch Frank

Archive | 2006

Halbleiterbauelement mit verbesserter Kommutierung

Tihanyi Jenoe; Pfirsch Frank; Auerbach Franz

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Collaboration

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Schulze Hans-Joachim

Infineon Technologies

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Mauder Anton

Infineon Technologies

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Hirler Franz

Siemens

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Sedlmaier Stefan

Infineon Technologies

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Willmeroth Armin

Infineon Technologies

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Armin Willmeroth

Infineon Technologies

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Niedernostheide Franz-Josef

Siemens

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Strack Helmut

Infineon Technologies

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Auerbach Franz

Infineon Technologies

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Hille Frank

Infineon Technologies

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