Is this you? Create Your Porfile
Avatar

Sedlmaier Stefan

Infineon Technologies

Network

Latest external collaboration on country level. Dive into details by clicking on the dots.

Explore More

Hotspot

Dive into the research topics where Sedlmaier Stefan is active.

Explore More

Publication

Featured researches published by Sedlmaier Stefan.

Archive | 2007

Verfahren zur Herstellung eines vertikalen MOS-Halbleiterbauelementes mit dünner Dielektrikumsschicht und tiefreichenden vertikalen Abschnitten

Rueb Michael; Schaefer Herbert; Willmeroth Armin; Mauder Anton; Schulze Hans-Joachim; Sedlmaier Stefan; Pfirsch Frank; Hirler Franz; Pippan Manfred; Weber Hans; Rupp Roland

Archive | 2013

SEMICONDUCTOR DEVICE STRUCTURE HAVING VERTICAL DIELECTRIC LAYER

Mauder Anton; Sedlmaier Stefan; Erichsen Ralf; Weber Hans; Haeberlen Oliver; Hirler Franz

Archive | 2012

Semiconductor device having drift region and drift control region

Firsch Frank; Mauder Anton; Schulze Hans-Joachim; Sedlmaier Stefan; Willmeroth Armin; Markus Zundel; Franz Hirler; Allunyai Mittal; ヴィルメロス アルミン; シュルツ ハンス−ヨアヒム; ゼードルマイアー，シュテファン; ツンデル，マルクス; ヒルラー，フランツ; フィルシュ，フランク; マウダー アントン; ミッタル，アルンヤイ

Archive | 2012

Method for manufacturing power semiconductor device having charge compensation structure

Mauder Anton; Willmeroth Armin; Pfirsch Frank; Schulze Hans-Joachim; Strack Helmut; Sedlmaier Stefan; ヴィルメロート，アルミン; シュトラック，ヘルムート; シュルツェ，ハンス−ヨアヒム; ゼドルマイアー，シュテファン; プフィルシュ，フランク; マウダー，アントン

Archive | 2010

SEMICONDUCTOR-ELEMENT STRUCTURE HAVING LONGITUDINAL-TYPE DIELECTRIC LAYER

Mauder Anton; Sedlmaier Stefan; Erichsen Ralf; Weber Hans; Haeberlen Oliver; Hirler Franz

Archive | 2010

METHOD FOR PRODUCING MATERIAL LAYER IN SEMICONDUCTOR BODY

Mauder Anton; Pfirsch Frank; Berger Rudolf; Sedlmaier Stefan; Lehnert Wolfgang; Foerg Raimund; Willmeroth Armin; Baumgartl Johannes

Archive | 2009

Semiconductor component e.g. MOS field effect transistor, has intermediate zones arranged on ditch walls, where intermediate zones are high-impedance with respect to loading compensation zones and drift zones

Sedlmaier Stefan; Mauder Anton; Schulze Hans-Joachim; Rieger Walter

Archive | 2008

Semiconductor element comprises semiconductor body with drift section structure, where trench structure that has trench walls and trench body, is filled with vertically aligned semiconductor material

Sedlmaier Stefan; Mauder Anton; Werner Wolfgang; Schmidt Gerhard

Archive | 2008

HALBLEITERBAUELEMENT MIT LADUNGSKOMPENSATIONSSTRUK

Sedlmaier Stefan; Mauder Anton; Pfirsch Frank; Schulze Hans-Joachim; Strack Helmut; Willmeroth Armin

Archive | 2007

Bauelementanordnung mit einem eine Driftsteuerzone aufweisenden Leistungshalbleiterbauelement Component arrangement with a drift control zone having power semiconductor component

Mauder Anton; Sedlmaier Stefan; Hirler Franz; Armin Willmeroth; Gerhard Noebauer

Explore More

Collaboration

Dive into the Sedlmaier Stefan's collaboration.

Top Co-Authors
Avatar

Mauder Anton

Infineon Technologies

View shared research outputs
Top Co-Authors
Avatar

Hirler Franz

Siemens

View shared research outputs
Top Co-Authors
Avatar

Schulze Hans-Joachim

Infineon Technologies

View shared research outputs
Top Co-Authors
Avatar

Pfirsch Frank

Infineon Technologies

View shared research outputs
Top Co-Authors
Avatar

Armin Willmeroth

Infineon Technologies

View shared research outputs
Top Co-Authors
Avatar

Willmeroth Armin

Infineon Technologies

View shared research outputs
Top Co-Authors
Avatar

Weber Hans

Siemens

View shared research outputs
Top Co-Authors
Avatar

Gerhard Noebauer

Infineon Technologies

View shared research outputs
Top Co-Authors
Avatar

Haeberlen Oliver

Infineon Technologies

View shared research outputs
Top Co-Authors
Avatar

Strack Helmut

Infineon Technologies

View shared research outputs
Explore More
Researchain Logo
Decentralizing Knowledge