Mehmet C. Öztürk

Surface-Energy-Assisted Perfect Transfer of Centimeter-Scale Monolayer and Few-Layer MoS2 Films onto Arbitrary Substrates

The transfer of synthesized 2D MoS2 films is important for fundamental and applied research. However, it is problematic to translate the well-established transfer processes for graphene to MoS2 due to different growth mechanisms and surface properties. Here we demonstrate a surface-energy-assisted process that can perfectly transfer centimeter-scale monolayer and few-layer MoS2 films from original growth substrates onto arbitrary substrates with no observable wrinkles, cracks, and polymer residues. The unique strategies used in this process include leveraging the penetration of water between hydrophobic MoS2 films and hydrophilic growth substrates to lift off the films and dry transferring the film after the lift off. This is in stark contrast with the previous transfer process for synthesized MoS2 films, which explores the etching of the growth substrate by hot base solutions to lift off the films. Our transfer process can effectively eliminate the mechanical force caused by bubble generations, the attacks from chemical etchants, and the capillary force induced when transferring the film outside solutions as in the previous transfer process, which consists of the major causes for the previous unsatisfactory transfer. Our transfer process also benefits from using polystyrene (PS), instead of poly(methyl methacrylate) (PMMA) that was widely used previously, as the carrier polymer. PS can form more intimate interaction with MoS2 films than PMMA and is important for maintaining the integrity of the film during the transfer process. This surface-energy-assisted approach can be generally applied to the transfer of other 2D materials, such as WS2.

Optimization of the germanium preamorphization conditions for shallow-junction formation

Shallow p/sup +/-n and n/sup +/-p junctions were formed in germanium preamorphized Si substrates. Germanium implantation was carried out over the energy range of 50-125 keV and at doses from 3*10/sup 14/ to 1*10/sup 15/ cm/sup -2/. p/sup +/-n junctions were formed by 10-keV boron implantation at a dose of 1*10/sup 15/ cm/sup -2/. Arsenic was implanted at 50 keV at a dose of 5*10/sup 15/ cm/sup -2/ to form the n/sup +/-p junctions. Rapid thermal annealing was used for dopant activation and damage removal. Ge, B, and As distribution profiles were measured by secondary ion mass spectroscopy. Rutherford backscattering spectrometry was used to study the dependence of the amorphous layer formation on the energy and dose of germanium ion implantation. Cross-sectional transmission electron microscopy was used to study the residual defects formed due to preamorphization. Complete elimination of the residual end-of-range damage was achieved in samples preamorphized by 50-keV/1*10/sup 15/ cm/sup -2/ germanium implantation. Areal and peripheral leakage current densities of the junctions were studied as a function of germanium implantation parameters. The results show that high-quality p/sup +/-n and n/sup +/-p junctions can be formed in germanium preamorphized substrates if the preamorphization conditions are optimized. >

Stability of C54 titanium germanosilicide on a silicon‐germanium alloy substrate

The stability of C54 Ti(Si1−yGey)2 films in contact with Si1−xGex substrates was investigated. The C54 Ti(Si1−yGey)2 films were formed from the Ti‐Si1−xGex solid phase metallization reaction. It was determined that initially C54 Ti(Si1−yGey)2 forms with a Ge index y approximately the same as the Ge index x of the Si1−xGex substrate (i.e., y≊x). After the formation of the C54 titanium germanosilicide, Si and Ge from the Si1−xGex substrate continue to diffuse into the C54 layer, presumably via lattice and grain boundary diffusion. Some of the Si diffusing into the C54 lattice replaces Ge on the C54 lattice and the Ge index of the C54 Ti(Si1−yGey)2 decreases (i.e., y<x). We propose that this process is driven by a reduction in C54 crystal energy which accompanies the replacement of Ge with Si on the C54 lattice. The excess Ge diffuses to the C54 grain boundaries where it combines with Si1−xGex from the substrate and precipitates as Si1−zGez which is Ge‐rich relative to the substrate (z≳x). This segregation a...

Temperature uniformity in RTP furnaces

The heat transfer to a wafer in a rapid thermal processing (RTP) furnace is simulated by an analytical/numerical model. The model includes radiation heat transfer to the wafer from the lamps, heat conduction within the wafer, and emission of radiation from the wafer. Geometric optics are used to predict the radiant heat flux distribution over the wafer. The predicted wafer surface temperature distribution is compared to measurements made in an RTP furnace for two different reflector geometries. Lamp configurations and the resulting irradiance required to produce a uniform wafer temperature are defined. >

Formation of titanium and cobalt germanides on Si (100) using rapid thermal processing

Titanium and cobalt germanides have been formed on Si (100) substrates using rapid thermal processing. Germanium was deposited by rapid thermal chemical vapor deposition prior to metal evaporation. Solid phase reactions were then performed using rapid thermal annealing in either Ar or N2 ambients. Germanide formation has been found to occur in a manner similar to the formation of corresponding silicides. The sheet resistance was found to be dependent on annealing ambient (Ar or N2) for titanium germanide formation, but not for cobalt germanide formation. The resistivities of titanium and cobalt germanides were found to be 20 µΩ-cm and 35.3µΩ-cm, corresponding to TiGe2 and Co2Ge, respectively. During solid phase reactions of Ti with Ge, we have found that the Ti6Ge5 phase forms prior to TiGe2. The TiGe2 phase was found to form approximately at 800° C. Cobalt germanide formation was found to occur at relatively low temperatures (425° C); however, the stability of the material is poor at elevated temperatures.

Selective low‐pressure chemical vapor deposition of Si1−xGex alloys in a rapid thermal processor using dichlorosilane and germane

Low‐pressure chemical vapor deposition of Si1−xGex alloys in a cold wall, lamp‐heated rapid thermal processor was studied. Alloys were deposited using the reactive gases GeH4 and SiH2Cl2 in a hydrogen carrier gas. The depositions were performed at a total pressure of 2.5 Torr and at temperatures between 500 and 800 °C using GeH4:SiH2Cl2 ratios ranging from 0.025 to 1.00. Results showed that Si1−xGex alloys can be deposited selectively on silicon in SiO2. The selectivity is enhanced significantly by the addition of GeH4 in the gas stream. In this work, selective depositions were obtained when the GeH4:SiH2Cl2 gas flow ratio was greater than 0.2 regardless of the deposition temperature, corresponding to a Ge content of 20% or higher in the films as determined by Auger electron spectroscopy. An enhancement in the deposition rate was observed in agreement with earlier reports due to the addition of GeH4. The activation energy for deposition in the surface reaction limited regime varied from 20 to 30 kcal/mole...

Material and electrical properties of ultra-shallow p/sup +/-n junctions formed by low-energy ion implantation and rapid thermal annealing

A study of low-energy ion implantation processes for the fabrication of ultrashallow p/sup +/-n junctions is presented. The resulting junctions are examined in terms of four key parameters: defect annihilation, junction depth, sheet resistance, and diode reverse leakage current. In the realm of very-low-energy ion implantation, Ge preamorphization is found to be largely ineffective at reducing junction depth, despite the fact that the as-implanted boron profiles are much shallower for preamorphized substrates than for crystalline substrates. Transmission electron microscopy (TEM) analysis of residual defects after rapid thermal annealing (RTA) reveals that the use of either a preamorphization implant or the implantation of BF/sub 2/ as a B source results in residual damage which requires higher RTA temperatures to be removed. A reasonable correlation is observed between residual defect density observed via TEM and junction leakage current. It is concluded that the key to an optimized low-energy implantation process for the formation of ultrashallow junctions appears to be the proper selection of preamorphization and annealing conditions relative to the dopant implant energy. >

Rapid thermal chemical vapor deposition of germanium on silicon and silicon dioxide and new applications of Ge in ULSI technologies

In this study, low pressure chemical vapor deposition of pure germanium on silicon and silicon dioxide has been considered for new applications in future ultra large scale integration (ULSI) technologies. Germanium depositions were performed in a lamp heated cold-wall rapid thermal processor using thermal decomposition of GeH4. It is shown that Ge deposition on Si can be characterized by two different regions: a) at temperatures below approximately 450° C, the deposition is controlled by the rate of surface reactions resulting in an activation energy of 41.7 kcal/mole. b) Above this temperature, mass transport effects become dominant. The deposition rate at the transition temperature is approximately 800 Å/min. It is shown that Ge deposition on SiO2 does not occur, even at temperatures as high as 600° C, resulting in a highly selective deposition process. Selectivity, combined with low deposition temperature makes the process very attractive for a number of applications. In this work, it is shown for the first time that selective Ge deposition can be used to eliminate silicon consumption below the gate level during the silicidation of the shallow source and drain junctions of deep submicron MOSFETs. In addition, a new in situ technique has been developed which allows polycrystalline germanium (poly-Ge) deposition on SiO2. In this work poly-Ge has been considered as a low temperature alternative to polycrystalline silicon (poly-Si) in the formation of gate electrodes in single-wafer manufacturing where low-thermal budget processes are most desirable.

Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing

This article provides the latest advances from the NSF Advanced Self-powered Systems of Integrated sensors and Technologies (ASSIST) center. The work in the center addresses the key challenges in wearable health and environmental systems by exploring technologies that enable ultra-long battery lifetime, user comfort and wearability, robust medically validated sensor data with value added from multimodal sensing, and access to open architecture data streams. The vison of the ASSIST center is to use nanotechnology to build miniature, self-powered, wearable, and wireless sensing devices that can enable monitoring of personal health and personal environmental exposure and enable correlation of multimodal sensors. These devices can empower patients and doctors to transition from managing illness to managing wellness and create a paradigm shift in improving healthcare outcomes. This article presents the latest advances in high-efficiency nanostructured energy harvesters and storage capacitors, new sensing modalities that consume less power, low power computation, and communication strategies, and novel flexible materials that provide form, function, and comfort. These technologies span a spatial scale ranging from underlying materials at the nanoscale to body worn structures, and the challenge is to integrate them into a unified device designed to revolutionize wearable health applications.

Nickel Germanosilicide contacts formed on heavily boron doped Si/sub 1-x/Ge/sub x/ source/drain junctions for nanoscale CMOS

Formation of source/drain junctions with a small parasitic series resistance is one of the key challenges for CMOS technology nodes beyond 100 nm. A new source/drain technology based on selective deposition of heavily in situ doped Si/sub 1-x/Ge/sub x/ layers was recently developed in this laboratory. This paper presents formation and structural characterization of self-aligned nickel germanosilicide contacts formed on heavily boron doped Si/sub 1-x/Ge/sub x/ alloys. The results show that thin NiSi/sub 1-x/Ge/sub x/ contacts with a resistivity of /spl sim/25 /spl mu//spl Omega/-cm can be formed on Si/sub 1-x/Ge/sub x/ alloys at temperatures as low as 350/spl deg/C. However, the low resistivity and the structural integrity of the NiSi/sub 1-x/Ge/sub x/ films can be maintained up to a maximum temperature of 450/spl deg/C. At higher temperatures, Ge out-diffusion from NiSi/sub 1-x/Ge/sub x/ grains results in interface roughening and NiSi spikes. If the maximum processing temperature is kept within 400/spl deg/C, p/sup +/-n junctions with excellent leakage behavior can be formed. A minimum contact resistivity of 2/spl times/10/sup -8/ /spl Omega/-cm/sup 2/ is demonstrated for Ge concentrations above /spl sim/40%, which can be linked to the smaller semiconductor bandgap and high boron activation under the metal contact. The results suggest that NiSi/sub 1-x/Ge/sub x/ contacts formed on Si/sub 1-x/Ge/sub x/ junctions have the potential to satisfy the contact resistivity requirements of future CMOS technology nodes.