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Dive into the research topics where Mei Sheng Zhou is active.

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Featured researches published by Mei Sheng Zhou.


Solid State Phenomena | 2007

Impact of Re-Gasified Water on Megasonic Cleaning

Boon Cheng Goh; Felicia Goh; Christopher Lim; Zainab Ismail; Mei Sheng Zhou

Megasonic cleaning using de-gassed water (less than 2ppm N2, O2, CO2) in a 300mm batch immersion tool often does not give optimal particle performance, with particle streaks and clusters added onto the wafer, and low particle removal efficiency (PRE). When water was re-gasified with N2, the resultant stable cavitation activity reduced particle adders and increased PRE. With N2 concentration increased to just above 5ppm, number of particle adders decreased by three folds. Optimal particle performance could be obtained by operating at an N2 level close to saturation.


Archive | 2000

Aluminum and copper bimetallic bond pad scheme for copper damascene interconnects

Mei Sheng Zhou; Sangki Hong; Simon Chooi


Archive | 1999

Low dielectric constant materials for copper damascene

Simon Chooi; Mei Sheng Zhou; Yi Xu


Archive | 2001

Method to improve adhesion of organic dielectrics in dual damascene interconnects

Subhash Gupta; Yi Xu; Simon Chooi; Mei Sheng Zhou


Archive | 2002

Use of boron carbide as an etch-stop and barrier layer for copper dual damascene metallization

Licheng M. Han; Xu Yi; Joseph Zhifeng Xie; Mei Sheng Zhou; Simon Chooi


Archive | 2003

Methods to form dual metal gates by incorporating metals and their conductive oxides

Wenhe Lin; Mei Sheng Zhou; Kin Leong Pey; Simon Chooi


Archive | 2000

Method to form damascene interconnects with sidewall passivation to protect organic dielectrics

Mei Sheng Zhou; Simon Chooi; Yi Xu


Archive | 2002

Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damascene

Simon Chooi; Subhash Gupta; Mei Sheng Zhou; Sang Ki Hong


Archive | 2000

Method to form zirconium oxide and hafnium oxide for high dielectric constant materials

Simon Chooi; Wenhe Lin; Mei Sheng Zhou


Archive | 1999

Damascene structure with reduced capacitance using a carbon nitride, boron nitride, or boron carbon nitride passivation layer, etch stop layer, and/or cap layer

Simon Chooi; Yi Xu; Mei Sheng Zhou

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Simon Chooi

Chartered Semiconductor Manufacturing

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Subhash Gupta

Chartered Semiconductor Manufacturing

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Paul Kwok Keung Ho

Chartered Semiconductor Manufacturing

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John Sudijono

Chartered Semiconductor Manufacturing

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Sudipto Ranendra Roy

Chartered Semiconductor Manufacturing

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Yi Xu

Chartered Semiconductor Manufacturing

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Yakub Aliyu

Chartered Semiconductor Manufacturing

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Xu Yi

Chartered Semiconductor Manufacturing

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Christopher Lim

Chartered Semiconductor Manufacturing

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Kwok Keung Paul Ho

Chartered Semiconductor Manufacturing

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