Mi Hye Kim

Active control of all-fibre graphene devices with electrical gating

Active manipulation of light in optical fibres has been extensively studied with great interest because of its compatibility with diverse fibre-optic systems. While graphene exhibits a strong electro-optic effect originating from its gapless Dirac-fermionic band structure, electric control of all-fibre graphene devices remains still highly challenging. Here we report electrically manipulable in-line graphene devices by integrating graphene-based field effect transistors on a side-polished fibre. Ion liquid used in the present work critically acts both as an efficient gating medium with wide electrochemical windows and transparent over-cladding facilitating light–matter interaction. Combined study of unique features in gate-variable electrical transport and optical transition at monolayer and randomly stacked multilayer graphene reveals that the device exhibits significant optical transmission change (>90%) with high efficiency-loss figure of merit. This subsequently modifies nonlinear saturable absorption characteristics of the device, enabling electrically tunable fibre laser at various operational regimes. The proposed device will open promising way for actively controlled optoelectronic and nonlinear photonic devices in all-fibre platform with greatly enhanced graphene–light interaction.

Monolayer graphene saturable absorbers with strongly enhanced evanescent-field interaction for ultrafast fiber laser mode-locking

We demonstrate an efficient all-fiber saturable absorber (SA) that evanescently interacts with a graphene monolayer. Strong nonlinear interaction between the graphene sheet and evanescent wave was realized in both experiments and numerical calculations by employing an over-cladding structure on high-quality monolayer graphene that uniformly covered the side-polished fiber. A passively mode-locked Er-doped fiber laser was built, including our in-line graphene SA, which stably generated ultrashort pulses with pulse duration of 377 fs at a repetition rate of 37.7 MHz. The corresponding 3-dB spectral bandwidth of the laser was measured to be 8.6 nm at the central wavelength of 1607.7 nm. We also experimentally observed that the spectral bandwidth and pulse duration of the laser output could be controlled by proper selection of the refractive index of the over-cladding material on the monolayer-graphene SA.

Passive Q-switching of microchip lasers based on Ho:YAG ceramics.

A Ho:YAG ceramic microchip laser pumped by a Tm fiber laser at 1910 nm is passively Q-switched by single- and multi-layer graphene, single-walled carbon nanotubes (SWCNTs), and Cr2+:ZnSe saturable absorbers (SAs). Employing SWCNTs, this laser generated an average power of 810 mW at 2090 nm with a slope efficiency of 68% and continuous wave to Q-switching conversion efficiency of 70%. The shortest pulse duration was 85 ns at a repetition rate of 165 kHz, and the pulse energy reached 4.9 μJ. The laser performance and pulse stability were superior compared to graphene SAs even for a different number of graphene layers (n=1 to 4). A model for the description of the Ho:YAG laser Q-switched by carbon nanostructures is presented. This modeling allowed us to estimate the saturation intensity for multi-layered graphene and SWCNT SAs to be 1.2±0.2 and 7±1  MW/cm2, respectively. When using Cr2+:ZnSe, the Ho:YAG microchip laser generated 11 ns/25 μJ pulses at a repetition rate of 14.8 kHz.

Q-switched operation of a femtosecond-laser-inscribed Yb:YAG channel waveguide laser using carbon nanotubes

We demonstrate a diode-pumped femtosecond-laser-inscribed Yb:YAG channel waveguide laser, Q-switched by using single-walled carbon nanotubes (SWCNTs) near 1029 nm. We used saturable absorber mirrors (SAMs) fabricated by depositing SWCNTs on three different output couplers. Best performance of the 9.3-mm-long ultra-compact Q-switched waveguide laser is obtained with an output coupling transmission of 20%. In this case, a maximum average output power of 60 mW with a corresponding pulse energy of 37.7 nJ and a pulse duration of 88 ns at 1.59-MHz repetition rate were achieved. The highest pulse energy of 39.2 nJ and the shortest pulse duration of 78 ns were obtained with 30% and 10% output couplers, respectively.

Carbon nanostructure-based saturable absorber mirror for a diode-pumped 500-MHz femtosecond Yb:KLu(WO 4 ) 2 laser

We report a diode-pumped Yb:KLu(WO(4))(2) (Yb:KLuW) laser passively mode-locked by employing a carbon nanostructure-based multi-functional saturable absorber mirror. Two types of carbon nanostructures, single-walled carbon nanotubes (SWCNTs) and graphene, were deposited on a single dielectric mirror and applied both for stable mode-locking of the Yb:KLuW laser near 1050 nm in a compact cavity configuration. The carbon nanostructure mode-locked laser delivers 157-fs pulses with output powers of up to 85 mW at a repetition rate of 500 MHz.

All-fiber Tm-doped soliton laser oscillator with 6 nJ pulse energy based on evanescent field interaction with monoloayer graphene saturable absorber

We demonstrate an all-fiber Tm-doped soliton laser with high power by using a monolayer graphene saturable absorber (SA). Large area, uniform monolayer graphene was transferred to the surface of the side-polished fiber (SPF) to realize an in-line graphene SA that operates around 2 μm wavelength. To increase the nonlinear interaction with graphene, we applied an over-cladding onto the SPF, where enhanced optical absorption at monolayer graphene was observed. All-fiber Tm-doped mode-locked laser was built including our in-line graphene SA, which stably delivered the soliton pulses with 773 fs pulse duration. The measured 3-dB spectral bandwidth was 5.14 nm at the wavelength of 1910 nm. We obtained the maximum average output power of 115 mW at a repetition rate of 19.31 MHz. Corresponding pulse energy was estimated to be 6 nJ, which is the highest value among all-fiber Tm-doped soliton oscillators using carbon-material-based SAs.

Monolayer graphene coated Yb:YAG channel waveguides for Q-switched laser operation

We studied operation characteristics of an Yb:YAG channel waveguide laser, Q-switched by employing monolayer graphene. Uniform monolayer graphene grown by thermal chemical vapor deposition is transferred directly onto one end facet of the channel waveguide which simultaneously serves as an output coupling mirror (OC), making a monolithic Q-switched waveguide laser possible. In this cavity configuration, the Q-switched laser delivers a maximum average output power of 85 mW, corresponding to a pulse energy of 64 nJ at 1.33-MHz repetition rate. The laser performance of this device is compared with another cavity configuration, in which the monolayer graphene is coated onto separate OCs. In this case a shorter pulse duration of 79 ns is achieved, but the laser operation performance is worse with respect to efficiency and output power. The proposed monolithic approach demonstrates the potential for developing more compact Q-switched laser devices.

Graphene mode-locked femtosecond Cr 2+ :ZnS laser with ~300 nm tuning range.

Graphene has proved to be an excellent broadband saturable absorber for mode-locked operation of ultrafast lasers. However, for the mid-infrared (mid-IR) range where broadly tunable sources are in great needs, graphene-based broadly tunable ultrafast mid-IR lasers have not been demonstrated so far. Here, we report on passive mode-locking of a mid-IR Cr:ZnS laser by utilizing a transmission-type monolayer graphene saturable absorber and broad spectral tunability between 2120 nm and 2408 nm, which is the broadest tuning bandwidth ever reported for graphene mode-locked mid-IR solid-state lasers. The recovery time of the saturable absorber is measured to be ~2.4 ps by pump-probe technique at a wavelength of 2350 nm. Stably mode-locked Cr:ZnS laser delivers Fourier transform-limited 220-fs pulses with a pulse energy of up to 7.8 nJ.

Tm,Ho:KLu(WO 4 ) 2 laser mode-locked near 2 μm by single-walled carbon nanotubes

We demonstrate passive mode-locking of a Tm,Ho-codoped crystalline laser operating on the Ho³⁺-ion transition ⁵I₇→⁵I₈ near 2 µm using a single-walled carbon nanotube saturable absorber. The Tm,Ho:KLu(WO₄)₂ laser emits nearly transform-limited pulses with duration of 2.8 ps at a repetition rate of 91 MHz. The output power amounts to 97 mW.

Wavelength and fluence-dependent third-order optical nonlinearity of mono- and multi-layer graphene

The objective of this study is to investigate third-order optical nonlinearities of monolayer and randomly stacked bi- and four-layer graphene samples, depending on wavelength and fluence of femtosecond laser pulses in the near-infrared spectral region. Nonlinear refractive indices and absorption coefficients, and in consequence, third-order susceptibilities of graphene samples, are determined by z-scan measurements at four different wavelengths and three fluence regimes categorized by nonlinear transmission measurements. In addition, nonlinear refractive indices are independently investigated by optical Kerr gate experiments, showing good agreement with z-scan results. Our study on third-order nonlinearities of mono- and multi-layer graphene samples is significant for understanding nonlinear optical characteristics of graphene and developing graphene-based nonlinear photonic devices.