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Dive into the research topics where Michael L. McSwiney is active.

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Featured researches published by Michael L. McSwiney.


Applied Physics Letters | 2008

Origin of dielectric loss induced by oxygen plasma on organo-silicate glass low-k dielectrics

Hualiang Shi; J. Bao; Ryan Scott Smith; Huai Huang; Junjun Liu; Paul S. Ho; Michael L. McSwiney; Mansour Moinpour; Grant M. Kloster

This study investigated the origin of dielectric loss induced by O2 plasma on organo-silicate glass low-k dielectrics. The contributions from the polarization components to dielectric constant were delineated by analyzing the results from capacitance-voltage measurement, spectroscopic ellipsometry, and Fourier transform infrared spectroscopy together with the Kramers–Kronig dispersion relation. The dielectric loss was found to be dominated by the dipole contribution, compared with the electronic and ionic polarizations. The origin of the dipole contribution was further investigated by performing quantum chemistry calculations. The physisorbed water molecules were found to be primarily responsible for the dipole moment increase and the dielectric loss.


MRS Proceedings | 2008

Dielectric Recovery of Plasma Damaged Organosilicate Low-k Films

Huai Huang; J. Bao; Junjun Liu; Ryan Scott Smith; Yangming Sun; Paul S. Ho; Michael L. McSwiney; Mansour Moinpour; Grant M. Kloster

Methyl depletion and subsequent moisture uptake have been found to be the primary plasma damages leading to dielectric loss in porous organosilicate (OSG) low-k dielectrics. A vacuum vapor silylation process was developed for dielectric recovery of plasma damaged OSG low-k dielectrics. The methyl or phenyl containing silylation agents were used to convert the hydrophilic -OH groups to hydrophobic groups. Compared with Trimethylchlorosilane (TMCS) and Phenyltrimethoxysilane (PTMOS), Dimethyldichlorosilane (DMDCS) was found to be more effective in recovering surface carbon concentration and surface hydrophobicity. But the carbon recovery effect was limited to the surface region. Alternatively, UV radiation with thermal activation was applied for dielectric recovery of plasma damaged OSG low-k dielectrics. The combined UV/thermal process was found to be efficient in reducing –OH, physisorbed water, and C=O bonds. The dielectric constant was recovered within 5% of the pristine sample and the leakage current was also much reduced. Aging test in air showed that no moisture retake was observed, indicating the repaired film was stable.


Archive | 2004

Integrating n-type and p-type metal gate transistors

Mark L. Doczy; Justin K. Brask; Steven J. Keating; Chris E. Barns; Brian S. Doyle; Michael L. McSwiney; Jack T. Kavalieros; John Barnak


Archive | 2005

Precursors for the deposition of carbon-doped silicon nitride or silicon oxynitride films

Michael L. McSwiney; Mengcheng Lu


Archive | 2003

Low-temperature silicon nitride deposition

Michael L. McSwiney; Michael D. Goodner


Archive | 2007

Forming a copper diffusion barrier

Steven W. Johnston; Valery M. Dubin; Michael L. McSwiney; Peter K. Moon


Archive | 2003

Forming a dielectric layer using a hydrocarbon-containing precursor

Robert P. Meagley; Michael D. Goodner; Andrew Ott; Grant M. Kloster; Michael L. McSwiney; Bob E. Leet


Archive | 2007

Methods of forming nickel silicide layers with low carbon content

Michael L. McSwiney; Matthew V. Metz


Archive | 2005

Layered films formed by controlled phase segregation

Robert P. Meagley; Michael J. Leeson; Michael D. Goodner; Bob E. Leet; Michael L. McSwiney; Shan Christopher Clark


Archive | 2005

Noble metal barrier and seed layer for semiconductors

Steven W. Johnston; Juan E. Dominguez; Michael L. McSwiney

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