Michael Stadtmueller
Infineon Technologies
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Publication
Featured researches published by Michael Stadtmueller.
Journal of Applied Physics | 2017
Maria Reiner; Josef Schellander; Günter Denifl; Michael Stadtmueller; Michael Schmid; Tobias Frischmuth; Ulrich Schmid; Rudolf Pietschnig; Clemens Ostermaier
Gallium nitride based high electron mobility transistors are widely known for their operational instabilities regarding interface defects to the dielectric. In this paper, we discuss a III-N surface treatment that results in an electrically more defined interface and hence a narrower distribution of electrically present interface states compared to the original, untreated interface. This surface modification is caused by a remote plasma fluorination of the III-N surface. We show that it is a very distinctive surface processing which cannot be reproduced by other plasma techniques or ion implantation. Applying physical and chemical analyses, the fluorination is found to have a remarkable stability towards temperatures up to 700 °C and is also stable in air for up to 180 h. However, an aqueous clean allows the surface to return to its original state. Even though the exact physical origin of the responsible surface donor cannot be inferred, we suggest that fluorine itself might not directly represent the new surface donor but that it rather activates the III-N surface prior to the dielectric deposition or even substitutes and hence reduces the concentration of surface hydroxides.Gallium nitride based high electron mobility transistors are widely known for their operational instabilities regarding interface defects to the dielectric. In this paper, we discuss a III-N surface treatment that results in an electrically more defined interface and hence a narrower distribution of electrically present interface states compared to the original, untreated interface. This surface modification is caused by a remote plasma fluorination of the III-N surface. We show that it is a very distinctive surface processing which cannot be reproduced by other plasma techniques or ion implantation. Applying physical and chemical analyses, the fluorination is found to have a remarkable stability towards temperatures up to 700 °C and is also stable in air for up to 180 h. However, an aqueous clean allows the surface to return to its original state. Even though the exact physical origin of the responsible surface donor cannot be inferred, we suggest that fluorine itself might not directly represent the new...
Archive | 2003
Henry Bernhardt; Thomas Seidemann; Michael Stadtmueller
Archive | 2007
Steffen Mueller; Alfred Kersch; Boris Habets; Michael Stadtmueller; Thomas Hecht
Archive | 2004
Albert Birner; Matthias Foerster; Thomas Hecht; Michael Stadtmueller; Andreas Orth
Archive | 2005
Albert Birner; Andreas Weber; Olaf Storbeck; Michael Stadtmueller; Wieland Pethe
Archive | 2001
Henry Bernhardt; Michael Stadtmueller; Thomas Seidemann
Physica Status Solidi B-basic Solid State Physics | 2016
Maria Reiner; Guenter Denifl; Michael Stadtmueller; Rudolf Pietschnig; Clemens Ostermaier
Archive | 2006
Alejandro Avellan; Matthias Goldbach; Thomas Hecht; Stefan Jakschik; Andreas Orth; Uwe Dr. Schröder; Michael Stadtmueller; Olaf Storbeck
Archive | 2002
Henry Bernhardt; Michael Stadtmueller; Dietmar Ottenwaelder; Anja Morgenschweis
Archive | 2016
Johannes Georg Laven; Moriz Jelinek; Hans-Joachim Schulze; Werner Schustereder; Michael Stadtmueller