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Dive into the research topics where Michael Stadtmueller is active.

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Featured researches published by Michael Stadtmueller.


Journal of Applied Physics | 2017

Physical-chemical stability of fluorinated III-N surfaces: Towards the understanding of the (0001) AlxGa1-xN surface donor modification by fluorination

Maria Reiner; Josef Schellander; Günter Denifl; Michael Stadtmueller; Michael Schmid; Tobias Frischmuth; Ulrich Schmid; Rudolf Pietschnig; Clemens Ostermaier

Gallium nitride based high electron mobility transistors are widely known for their operational instabilities regarding interface defects to the dielectric. In this paper, we discuss a III-N surface treatment that results in an electrically more defined interface and hence a narrower distribution of electrically present interface states compared to the original, untreated interface. This surface modification is caused by a remote plasma fluorination of the III-N surface. We show that it is a very distinctive surface processing which cannot be reproduced by other plasma techniques or ion implantation. Applying physical and chemical analyses, the fluorination is found to have a remarkable stability towards temperatures up to 700 °C and is also stable in air for up to 180 h. However, an aqueous clean allows the surface to return to its original state. Even though the exact physical origin of the responsible surface donor cannot be inferred, we suggest that fluorine itself might not directly represent the new surface donor but that it rather activates the III-N surface prior to the dielectric deposition or even substitutes and hence reduces the concentration of surface hydroxides.Gallium nitride based high electron mobility transistors are widely known for their operational instabilities regarding interface defects to the dielectric. In this paper, we discuss a III-N surface treatment that results in an electrically more defined interface and hence a narrower distribution of electrically present interface states compared to the original, untreated interface. This surface modification is caused by a remote plasma fluorination of the III-N surface. We show that it is a very distinctive surface processing which cannot be reproduced by other plasma techniques or ion implantation. Applying physical and chemical analyses, the fluorination is found to have a remarkable stability towards temperatures up to 700 °C and is also stable in air for up to 180 h. However, an aqueous clean allows the surface to return to its original state. Even though the exact physical origin of the responsible surface donor cannot be inferred, we suggest that fluorine itself might not directly represent the new...


Archive | 2003

HEATING SYSTEM, METHOD FOR HEATING A DEPOSITION OR OXIDATION REACTOR, AND REACTOR INCLUDING THE HEATING SYSTEM

Henry Bernhardt; Thomas Seidemann; Michael Stadtmueller


Archive | 2007

Method and system for determining deformations on a substrate

Steffen Mueller; Alfred Kersch; Boris Habets; Michael Stadtmueller; Thomas Hecht


Archive | 2004

Memory cell and method for fabricating it

Albert Birner; Matthias Foerster; Thomas Hecht; Michael Stadtmueller; Andreas Orth


Archive | 2005

Method for fabricating an integrated circuit with a CMOS manufacturing process

Albert Birner; Andreas Weber; Olaf Storbeck; Michael Stadtmueller; Wieland Pethe


Archive | 2001

Heating system and method for heating a reactor

Henry Bernhardt; Michael Stadtmueller; Thomas Seidemann


Physica Status Solidi B-basic Solid State Physics | 2016

Through‐layer XPS investigations of the Si3N4/AlGaN interface

Maria Reiner; Guenter Denifl; Michael Stadtmueller; Rudolf Pietschnig; Clemens Ostermaier


Archive | 2006

Memory and method for fabricating it

Alejandro Avellan; Matthias Goldbach; Thomas Hecht; Stefan Jakschik; Andreas Orth; Uwe Dr. Schröder; Michael Stadtmueller; Olaf Storbeck


Archive | 2002

Method for the deposition of silicon nitride

Henry Bernhardt; Michael Stadtmueller; Dietmar Ottenwaelder; Anja Morgenschweis


Archive | 2016

Method of Manufacturing Semiconductor Devices and Semiconductor Device Containing Oxygen-Related Thermal Donors

Johannes Georg Laven; Moriz Jelinek; Hans-Joachim Schulze; Werner Schustereder; Michael Stadtmueller

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