Minh-Hai Nguyen

Enhancement of perpendicular magnetic anisotropy and transmission of spin-Hall-effect-induced spin currents by a Hf spacer layer in W/Hf/CoFeB/MgO layer structures

We report that strong perpendicular magnetic anisotropy of the ferromagnetic layer in a W/CoFeB/MgO multilayer structure can be established by inserting a Hf layer as thin as 0.25 nm between the W and CoFeB layers. The Hf spacer also allows transmission of spin currents generated by an in-plane charge current in the W layer to apply strong spin torque on the CoFeB, thereby enabling current-driven magnetic switching. The antidamping-like and field-like components of the spin torque exerted on a 1 nm CoFeB layer are of comparable magnitudes in this geometry. Both components originate from the spin Hall effect in the underlying W layer.

Spin Torque Study of the Spin Hall Conductivity and Spin Diffusion Length in Platinum Thin Films with Varying Resistivity.

We report measurements of the spin torque efficiencies in perpendicularly magnetized Pt/Co bilayers where the Pt resistivity ρ_{Pt} is strongly dependent on thickness t_{Pt}. The dampinglike spin Hall torque efficiency per unit current density ξ_{DL}^{j} varies significantly with t_{Pt}, exhibiting a peak value ξ_{DL}^{j}=0.12 at t_{Pt}=2.8-3.9  nm. In contrast, ξ_{DL}^{j}/ρ_{Pt} increases monotonically with t_{Pt} and saturates for t_{Pt}>5  nm, consistent with an intrinsic spin Hall effect mechanism, in which ξ_{DL}^{j} is enhanced by an increase in ρ_{Pt}. Assuming the Elliott-Yafet spin scattering mechanism dominates, we estimate that the spin diffusion length λ_{s}=(0.77±0.08)×10^{-15}  Ω·m^{2}/ρ_{Pt}.

Enhancement of the anti-damping spin torque efficacy of platinum by interface modification

We report a strong enhancement of the efficacy of the spin Hall effect (SHE) of Pt for exerting anti-damping spin torque on an adjacent ferromagnetic layer by the insertion of ≈0.5 nm layer of Hf between a Pt film and a thin, ≤2 nm, Fe60Co20B20 ferromagnetic layer. This enhancement is quantified by measurement of the switching current density when the ferromagnetic layer is the free electrode in a magnetic tunnel junction. The results are explained as the suppression of spin pumping through a substantial decrease in the effective spin-mixing conductance of the interface, but without a concomitant reduction of the ferromagnets absorption of the SHE generated spin current.

Enhanced spin Hall torque efficiency in Pt100−xAlx and Pt100−xHfx alloys arising from the intrinsic spin Hall effect

We report that the spin Hall torque generated by Pt can be enhanced substantially by alloying with Al or Hf. We observe damping-like spin torque efficiency per unit applied current density as high as ξDLj=0.23±0.02, nearly twice the maximum value reported for pure Pt. To achieve this maximum efficiency, a very thin (0.5 nm) Pt spacer layer is inserted between the alloy and the ferromagnet being manipulated, to avoid a degraded spin transparency at the alloy/ferromagnet interface.

Efficient switching of 3-terminal magnetic tunnel junctions by the giant spin Hall effect of Pt85Hf15 alloy

Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here, we directly demonstrate the usefulness of this strategy by fabricating prototype 3-terminal in-plane-magnetized magnetic tunnel junctions that utilize the spin Hall torque from a Pt85Hf15 alloy and measuring the critical currents for switching. We find that Pt85Hf15 reduces the switching current densities compared to pure Pt by approximately a factor of 2 for both quasi-static ramped current biases and nanosecond-scale current pulses, thereby proving the feasibility of this approach in assisting the development of efficient embedded magnetic memory technologies.