Neil Patel

An electrically pumped germanium laser

Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x1019cm-3 is achieved. A Germanium gain spectrum of nearly 200nm is observed.

Mid-infrared materials and devices on a Si platform for optical sensing

Abstract In this article, we review our recent work on mid-infrared (mid-IR) photonic materials and devices fabricated on silicon for on-chip sensing applications. Pedestal waveguides based on silicon are demonstrated as broadband mid-IR sensors. Our low-loss mid-IR directional couplers demonstrated in SiNx waveguides are useful in differential sensing applications. Photonic crystal cavities and microdisk resonators based on chalcogenide glasses for high sensitivity are also demonstrated as effective mid-IR sensors. Polymer-based functionalization layers, to enhance the sensitivity and selectivity of our sensor devices, are also presented. We discuss the design of mid-IR chalcogenide waveguides integrated with polycrystalline PbTe detectors on a monolithic silicon platform for optical sensing, wherein the use of a low-index spacer layer enables the evanescent coupling of mid-IR light from the waveguides to the detector. Finally, we show the successful fabrication processing of our first prototype mid-IR waveguide-integrated detectors.

An electrically pumped Ge-on-Si laser

We present the first CMOS compatible, electrically pumped Fabry-Perot Ge laser with larger than 1mW output power and a gain spectrum width of nearly 200nm in the range from 1520nm to 1700nm.

Point defect states in Sb-doped germanium

Defect states in n-type Sb-doped germanium were investigated by deep-level transient spectroscopy. Cobalt-60 gamma rays were used to generate isolated vacancies and interstitials which diffuse and react with impurities in the material to form four defect states (E37, E30, E22, and E21) in the upper half of the bandgap. Irradiations at 77 K and 300 K as well as isothermal anneals were performed to characterize the relationships between the four observable defects. E37 is assigned to the Sb donor-vacancy associate (E-center) and is the only vacancy containing defect giving an estimate of 2 × 1011 cm−3 Mrad−1 for the uncorrelated vacancy-interstitial pair introduction rate. The remaining three defect states are interstitial associates and transform among one another. Conversion ratios between E22, E21, and E30 indicate that E22 likely contains two interstitials.

Engineering broadband and anisotropic photoluminescence emission from rare earth doped tellurite thin film photonic crystals

Broadband and anisotropic light emission from rare-earth doped tellurite thin films is demonstrated using Er3+-TeO2 photonic crystals (PhCs). By adjusting the PhC parameters, photoluminescent light can be efficiently coupled into vertical surface emission or lateral waveguide propagation modes. Because of the flexibility of light projection direction, Er3+-TeO2 is a potential broadband light source for integration with three-dimensional photonic circuits and on-chip biochemical sensors.

Stability of Grafted Polymer Nanoscale Films toward Gamma Irradiation

The present article focuses on the influence of gamma irradiation on nanoscale polymer grafted films and explores avenues for improvements in their stability toward the ionizing radiation. In terms of applications, we concentrate on enrichment polymer layers (EPLs), which are polymer thin films employed in sensor devices for the detection of chemical and biological substances. Specifically, we have studied the influence of gamma irradiation on nanoscale poly(glycidyl methacrylate) (PGMA) grafted EPL films. First, it was determined that a significant level of cross-linking was caused by irradiation in pure PGMA films. The cross-linking is accompanied by the formation of conjugated ester, carbon double bonds, hydroxyl groups, ketone carbonyls, and the elimination of epoxy groups as determined by FTIR. Polystyrene, 4-amino-2,2,6,6-tetramethylpiperidine-1-oxyl, dimethylphenylsilanol, BaF2, and gold nanoparticles were incorporated into the films and were found to mitigate different aspects of the radiation damage.

Germanium laser: A CMOS compatible light emitter

CMOS Ge-on-Si pnn multimode laser diode is demonstrated. Calculated losses suggest a gain above 100cm-1. Observed power of above 1mW is reported.

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films.

Solution-based electrospray film deposition, which is compatible with continuous, roll-to-roll processing, is applied to chalcogenide glasses. Two chalcogenide compositions are demonstrated: Ge23Sb7S70 and As40S60, which have both been studied extensively for planar mid-infrared (mid-IR) microphotonic devices. In this approach, uniform thickness films are fabricated through the use of computer numerical controlled (CNC) motion. Chalcogenide glass (ChG) is written over the substrate by a single nozzle along a serpentine path. Films were subjected to a series of heat treatments between 100 °C and 200 °C under vacuum to drive off residual solvent and densify the films. Based on transmission Fourier transform infrared (FTIR) spectroscopy and surface roughness measurements, both compositions were found to be suitable for the fabrication of planar devices operating in the mid-IR region. Residual solvent removal was found to be much quicker for the As40S60 film as compared to Ge23Sb7S70. Based on the advantages of electrospray, direct printing of a gradient refractive index (GRIN) mid-IR transparent coating is envisioned, given the difference in refractive index of the two compositions in this study.

Electrically Pumped Germanium-on-Silicon Laser

Germanium lasing from Ge-on-Si pnn heterojunction diode structures is demonstrated. Selective growth of highly phosphorus doped Ge in oxide trenches shows a design for CMOS compatible laser integration.

Infrared Colloidal Quantum Dot Chalcogenide Films for Integrated Light Sources

Quantum dots and chalcogenide glasses form the basis for photoluminescent films which are fabricated in microcavities to enhance light emission for coupling into waveguides.