Nirmal Chaudhary
Infineon Technologies
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Publication
Featured researches published by Nirmal Chaudhary.
IEEE Transactions on Device and Materials Reliability | 2007
Christian Russ; Harald Gossner; Thomas Schulz; Nirmal Chaudhary; Weize Xiong; Andrew Marshall; Charvaka Duvvury; Klaus Schrüfer; C. Rinn Cleavelin
ESD characteristics of fully depleted (FD) FinFET devices are presented and compared to planar structures manufactured in the same multiple-gate FET (MuGFET) technology. FinFET-type MOS devices in breakdown mode are found to show an unprecedented sensitivity to ESD stress, while planar devices and FinFET gated diodes perform reasonably and with I-V characteristics beneficial for ESD protection.
Archive | 2005
Hong-Jyh Li; Nirmal Chaudhary
Archive | 2000
Nirmal Chaudhary; Xian J. Ning; George Stojakovic
Archive | 2001
John Pohl; Nirmal Chaudhary; Veit Klee; Tobias Mono; Paul Schroeder
Archive | 1997
Nirmal Chaudhary
Archive | 2006
Nirmal Chaudhary; Christian Russ; Thomas Schulz
Archive | 2001
Nirmal Chaudhary; Richard A. Conti
Archive | 2005
Nirmal Chaudhary; Christian Russ; Thomas Schulz
Archive | 2005
Nirmal Chaudhary; Hong-Jyh Austin Li
Archive | 2005
Nirmal Chaudhary; Christian Russ; Thomas Schulz