Nobuhiro Tsuji
Denso
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Publication
Featured researches published by Nobuhiro Tsuji.
international symposium on power semiconductor devices and ic s | 2001
Shoichi Yamauchi; Yasushi Urakami; Naohiro Suzuki; Nobuhiro Tsuji; Hitoshi Yamaguchi
A new trench filling epitaxial Si growth process has been proposed for the high aspect ratio doping region. This epitaxial process realizes the reducing void size in the trench compared with a conventional epitaxial process. The influence of the micro-void on multi-RESURF effect has been estimated by using numerical simulation. The decrease of breakdown voltage of simulated structures with micro-void that reflect experimental results is below 2.5% compared with ideal non-void structure.
Archive | 2003
Shoichi Yamauchi; Hitoshi Yamaguchi; Jun Sakakibara; Nobuhiro Tsuji
Archive | 2003
Shoichi Yamauchi; Nobuhiro Tsuji
Archive | 2001
Yasushi Urakami; Shoichi Yamauchi; Toshio Sakakibara; Hitoshi Yamaguchi; Nobuhiro Tsuji
Archive | 2006
Syouji Nogami; Tomonori Yamaoka; Shoichi Yamauchi; Nobuhiro Tsuji; Toshiyuki Morishita
Archive | 2006
Syouji Nogami; Tomonori Yamaoka; Shoichi Yamauchi; Nobuhiro Tsuji; Toshiyuki Morishita
Archive | 2008
Shinichi Adachi; Nobuhiro Tsuji; Shoichi Yamauchi
Archive | 2006
Shinichi Adachi; Nobuhiro Tsuji; Shoichi Yamauchi; 庄一 山内; 信一 足立; 信博 辻
Archive | 2002
Yasushi Urakami; Shoichi Yamauchi; Hitoshi Yamaguchi; Nobuhiro Tsuji
Archive | 2006
Toshiyuki Morishita; Syouji Nogami; Nobuhiro Tsuji; Tomonori Yamaoka; Shoichi Yamauchi
