OukJae Lee

Central role of domain wall depinning for perpendicular magnetization switching driven by spin torque from the spin Hall effect

We study deterministic magnetic reversal of a perpendicularly magnetized Co layer in a Co/MgO/Ta nano-square driven by spin Hall torque from an in-plane current flowing in an underlying Pt layer. The rate-limiting step of the switching process is domain-wall (DW) depinning by spin Hall torque via a thermally-assisted mechanism that eventually produces full reversal by domain expansion. An in-plane applied magnetic field collinear with the current is required, with the necessary field scale set by the need to overcome DW chirality imposed by the Dzyaloshinskii-Moriya interaction. Once Joule heating is taken into account the switching current density is quantitatively consistent with a spin Hall angle {\theta}

Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy.

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High Speed Epitaxial Perovskite Memory on Flexible Substrates

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Coherent and incoherent spin torque oscillations in a nanopillar magnetic spin-valve

0.07 for 4 nm of Pt.

Flexible spin-orbit torque devices

Significance When a spin orbit torque is applied to a magnet with perpendicular anisotropy, the induced spin accumulation is completely symmetric with respect to the magnetization. As a result, a deterministic switching cannot be achieved unless an external magnetic field is applied to break the symmetry. Here, we show that, by engineering a tilted anisotropy in a magnetic nanodot, the symmetry can effectively be broken and a deterministic switching of perpendicular magnetization can be achieved without needing the external magnetic field. These results are significant for the field of spintronics as the symmetry breaking provides new insight into the physics of spin orbit torque and the switching without a magnetic field could lead to significant impact in high-density storage applications. Spin orbit torque (SOT) provides an efficient way to significantly reduce the current required for switching nanomagnets. However, SOT generated by an in-plane current cannot deterministically switch a perpendicularly polarized magnet due to symmetry reasons. On the other hand, perpendicularly polarized magnets are preferred over in-plane magnets for high-density data storage applications due to their significantly larger thermal stability in ultrascaled dimensions. Here, we show that it is possible to switch a perpendicularly polarized magnet by SOT without needing an external magnetic field. This is accomplished by engineering an anisotropy in the magnets such that the magnetic easy axis slightly tilts away from the direction, normal to the film plane. Such a tilted anisotropy breaks the symmetry of the problem and makes it possible to switch the magnet deterministically. Using a simple Ta/CoFeB/MgO/Ta heterostructure, we demonstrate reversible switching of the magnetization by reversing the polarity of the applied current. This demonstration presents a previously unidentified approach for controlling nanomagnets with SOT.

Direct optical detection of current induced spin accumulation in metals by magnetization-induced second harmonic generation

Spin-polarized electrons can move a ferromagnetic domain wall through the transfer of spin angular momentum when current flows in a magnetic nanowire. Such current induced control of a domain wall is of significant interest due to its potential application for low power ultra high-density data storage. In previous reports, it has been observed that the motion of the domain wall always happens parallel to the current flow – either in the same or opposite direction depending on the specific nature of the interaction. In contrast, here we demonstrate deterministic control of a ferromagnetic domain wall orthogonal to current flow by exploiting the spin orbit torque in a perpendicularly polarized Ta/CoFeB/MgO heterostructure in presence of an in-plane magnetic field. Reversing the polarity of either the current flow or the in-plane field is found to reverse the direction of the domain wall motion. Notably, such orthogonal motion with respect to current flow is not possible from traditional spin transfer torque driven domain wall propagation even in presence of an external magnetic field. Therefore the domain wall motion happens purely due to spin orbit torque. These results represent a completely new degree of freedom in current induced control of a ferromagnetic domain wall.

Magnetization Switching and Domain Wall Motion Due to Spin Orbit Torque

Single-crystal perovskite ferroelectric material is integrated at room temperature on a flexible substrate by the layer transfer technique. Two terminal memory devices fabricated with these materials exhibit faster switching speed, lower operating voltage, and superior endurance than other existing flexible counterparts. The research provides an avenue toward combining the rich functionality of charge and spin states, offered by the general class of complex oxides, onto a flexible platform.

Single crystal complex oxide on flexible substrate.

We report enhanced spin-torque oscillator results obtained in spin-valve nanopillars. When biased within the optimal range of a moderate, ≤600 Oe, hard axis field, the spin-torque-driven oscillations exhibit a sharp increase in power and a sharply narrowed linewidth, ≤10 MHz, which, based on micromagnetic simulations, we ascribe to a transition from incoherent to coherent dynamics. The simulations indicate that the coherent dynamics are enabled by the combination of strong coupling between the two oscillator end modes of the magnetic free layer and strong non-linear damping arising from a non-uniform magnetization that leads to a spatially varying anti-damping spin torque.

Tunable magnetic anisotropy in perpendicular exchange-coupled CoFeB/(Co/Pt) films

We report on state-of-the-art spintronic devices synthesized and fabricated directly on a flexible organic substrate. Large perpendicular magnetic anisotropy was achieved in ultrathin ferromagnetic heterostructures of Pt/Co/MgO sputtered on a non-rigid plastic substrate at room temperature. Subsequently, a full magnetic reversal of the Co was observed by exploiting the spin orbit coupling in Pt that leads to a spin accumulation at the Pt/Co interface when an in-plane current is applied. Quasi-static measurements show the potential for operating these devices at nano-second speeds. Importantly, the behavior of the devices remained unchanged under varying bending conditions (up to a bending radius of ≈ ±20–30 mm). Furthermore, the devices showed robust operation even after application of 106 successive pulses, which is likely sufficient for many flexible applications. Thus, this work demonstrates the potential for integrating high performance spintronic devices on flexible substrates, which could lead to ma...