P. Buehlmann

In situ silicon oxide based intermediate reflector for thin-film silicon micromorph solar cells

We show that SiO-based intermediate reflectors (SOIRs) can be fabricated in the same reactor and with the same process gases as used for thin-film silicon solar cells. By varying input gas ratios, SOIR layers with a wide range of optical and electrical properties are obtained. The influence of the SOIR thickness in the micromorph cell is studied and current gain and losses are discussed. Initial micromorph cell efficiency of 12.2% (Voc=1.40V, fill factor=71.9%, and Jsc=12.1mA∕cm2) is achieved with top cell, SOIR, and bottom cell thicknesses of 270, 95, and 1800nm, respectively.

Limiting factors in the fabrication of microcrystalline silicon solar cells and microcrystalline/amorphous (‘micromorph’) tandems

This contribution presents the status of amorphous and microcrystalline silicon solar cells on glass, and discusses some material/fabrication factors that presently limit their conversion efficiency. Particular attention is focused on recent results and developments at the Institute of Microtechnology (IMT) in Neuchâtel. The performances and stability of microcrystalline silicon single-junction and amorphous/microcrystalline (‘micromorph’) tandem solar cells are discussed, as a function of material properties. Recent results on the electrical effect of cracks in microcrystalline silicon material are presented. Degradation under the effect of illumination is a well-known limiting factor for amorphous silicon solar cells. As a comparison, studies on the stability of microcrystalline silicon with respect to light-induced degradation are commented upon. The importance of transparent contacts and anti-reflection layers for achieving low electrical and optical losses is discussed. Finally, efforts towards industrialization of micromorph tandem solar cells are highlighted, specifically (i) the development and implementation of an in situ intermediate reflector in a large-area industrial deposition system, and (ii) recent achievements in increasing the growth rate of microcrystalline silicon.

Research and developments in thin-film silicon photovoltaics

The increasing demand for photovoltaic devices and the associated crystalline silicon feedstock demand scenario have led in the past years to the fast growth of the thin film silicon industry. The high potential for cost reduction and the suitability for building integration have initiated both industrial and research laboratories dynamisms for amorphous silicon and micro-crystalline silicon based photovoltaic technologies. The recent progress towards higher efficiencies thin film silicon solar cells obtained at the IMT-EPFL in Neuchatel in small-area laboratory and semi-large-area industrial Plasma Enhanced Chemical Vapor Deposition (PE-CVD) systems are reviewed. Advanced light trapping schemes are fundamental to reach high conversion efficiency and the potential of advanced Transparent Conductive Oxides (TCO) is presented, together with issues associated to the impact of the substrate morphology onto the growth of the silicon films. The recent improvements realized in amorphous-microcrystalline tandem solar cells on glass substrate are then presented, and the latest results on 1 cm2 cells are reported with up to 13.3 % initial efficiency for small-area reactors and up to 12.3 % initial for large-area industrial reactors. Finally, the different strategies to reach an improved light confinement in a thin film solar cell deposited on a flexible substrate are discussed, with the incorporation of asymmetric intermediate reflectors. Results of micromorph solar cells in the n-i-p configuration with up to 9.8 % stabilized efficiency are reported.

Conducting two-phase silicon oxide layers for thin-film silicon solar cells

We present optical properties and microstructure analyses of hydrogenated silicon suboxide layers containing silicon nanocrystals (nc-SiOx:H). This material is especially adapted for the use as intermediate reflecting layer (IRL) in micromorph silicon tandem cells due to its low refractive index and relatively high transverse conductivity. The nc-SiOx:H is deposited by very high frequency plasma enhanced chemical vapor deposition from a SiH4/CO2/H2/PH3 gas mixture. We show the influence of H2/SiH4 and CO2/SiH4 gas ratios on the layer properties as well as on the micromorph cell when the nc-SiOx:H is used as IRL. The lowest refractive index achieved in a working micromoph cell is 1.71 and the highest initial micromoph efficiency with such an IRL is 13.3 %.

Micromorph tandem solar cells grown at high rate with in-situ intermediate reflector in industrial KAI PECVD reactors

We report on the latest results of tandem micromorph (a-Si:H/μc-Si:H) silicon solar cells fabricated in commercial Oerlikon Solar KAI-S and KAI-M PECVD reactors. First developments of in-situ silicon oxide based intermediate reflector (SOIR) in KAI reactors are as well presented. Under low depletion conditions (silane concentration ≪ 10%) our best micromorph solar cells achieve initial efficiencies up to 10.6% for a cell size ≫ 1cm2, with a deposition rate of 0.55 nm/s for microcrystalline silicon and an ex-situ silicon oxide-based intermediate reflector (SOIR). Under high depletion conditions, the growth rate could be raised up to 1.2 nm/s, in a modified KAI-M reactor, and the highest initial efficiency reached so far is 9.7% with in-situ SOIR and top cell thickness of ∼ 230 nm. Promising micromorph solar cells are thus produced under conditions that are highly favorable to low-cost fabrication of tandem modules at an industrial level.

Micromorph Cells Grown at High Rate With In-Situ Intermediate Reflector in Industrial KAI PECVD Reactors

We report on results of tandem amorphous/microcrystalline (a-Si:H/μc-Si:H) silicon solar cells developed in commercial Oerlikon Solar KAI PECVD reactors, at an excitation frequency of 40.68 MHz. The cell structure consists of a stack of glass/front contact/pin a- Si:H/intermediate reflector/pin μc- Si:H/back contact. LPCVD (low-pressure chemical vapor deposition) ZnO (zinc oxide) is applied as front and back transparent conductive contacts. The silicon oxide based intermediate reflector (SOIR) is deposited in-situ. Two regimes are studied here for μc-Si:H: (i) low silane concentration (SC) regime with SC 1cm2 and in-situ SOIR. Under high SC conditions, the highest initial efficiency reached so far is 10.5%, again with in- situ SOIR. We demonstrate that high efficiency micromorph solar cells can hence be fabricated under conditions that are highly favorable to low-cost fabrication of tandem modules at an industrial level. Further investigations are now focused on the improvement of μc-Si:H material at 1 nm/s.