P. Yu

SEE sensitivities of selected advanced flash and first-in-first-out memories

Single event effects sensitivity measurements of advanced flash and first-in-first-out memories have been made. While many upsets are transients, other upsets initiated by high LET ions are semi-permanent.

Laser-induced and heavy ion-induced single-event transient (SET) sensitivity measurements on 139-type comparators

We have measured the single-event transient (SET) response for a number of 139-type comparators with differing topologies. In this paper, we present the results from pulsed laser measurements on a number of different 139-type devices, as well as heavy ion measurements on a new RM139 device from NSC. Devices tested with the laser included the HS-139RH, PM139, LM139 and a more recent version of LM139 from NSC. We discuss the effects of different device topologies on SET sensitivity. Our results agree qualitatively with SPICE model calculations of LM139s by Johnston et al.

Permanent single event functional interrupts (SEFIs) in 128- and 256-megabit synchronous dynamic random access memories (SDRAMs)

Permanent Single Event Functional Interrupts (SEFIs) have been observed in several high density Synchronous Dynamic Random Access Memories (SDRAMs). Affected devices often lose both Read and Write functions.

SEE sensitivity determination of high-density DRAMs with limited-range heavy ions

We have devised ways to measure the SEE sensitivity of plastic-encapsulated, high-density DRAMs with the use of limited-range heavy ions. The sensitivity at low LET regions is verified using a few species of ions with a long range.

Proton and Heavy Ion Induced Semi-Permanent Upsets in Double Data Rate SDRAMs

Semi-permanent upset sensitivity in DDR SDRAMs is investigated. A technique to reduce sensitivity is examined. The reduction extends to high LET regions for some heavy ion induced upsets.

Comparison of heavy ion and proton-induced single event effects (SEE) sensitivities

Proton-induced single event effects of a set of microcircuits are compared with effects due to heavy ions. Even though some microcircuits show a relatively high sensitivity to heavy ions, they do not have a corresponding sensitivity to protons.

SEE sensitivity trends in non-hardened high density SRAMs with sub-micron feature sizes

We report on single event upsets (SEU) and single event latchup (SEL) sensitivities under irradiation by protons and heavy ions for a variety of non-hardened high density static random access memories (SRAMs) with sub-micron feature sizes. The results are compared with previously measured sensitivities for similar devices with larger features. We discuss the sensitivity trends with temperature and examine other effects such as stuck bits.

Sensitivity of 2 Gb DDR2 SDRAMs to Protons and Heavy Ions

SEE sensitivity to protons and heavy ions is examined with several 2 Gb DDR2 SDRAM device types. Upsets in memory elements as well as in control circuit sections have been measured.

Variability in measured SEE sensitivity associated with design and fabrication iterations

SEE sensitivity variabilities emerge in microcircuit design iterations and fabrication changes. They encompass various types of SEE. While some SEE sensitivity variabilities remain acceptable, others are not tolerated for space applications.

Synergistic Effects of Total Ionizing Dose on SEU Sensitive SRAMs

Synergistic effects of total ionizing dose and particle fluence on SEU sensitivity of static random access memories have been investigated. The memory imprint effect has been observed to yield varying results.