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Featured researches published by Paolo Tessariol.


IEEE Transactions on Electron Devices | 2016

A Semi-Analytical Model for Macaroni MOSFETs With Application to Vertical Flash Memories

Giovanni M. Paolucci; Alessandro S. Spinelli; Christian Monzio Compagnoni; Paolo Tessariol

We present a semianalytical model for the electrostatics and the current-voltage characteristics of Macaroni MOSFETs based on the exact solution of the Poisson equation, which is useful to investigate both the subthreshold and the ON-state regimes of these devices. With the addition of a simplified calculation of the tunneling current, the model is exploited to analyze the program performance of Macaroni NAND flash memories.


Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena | 2011

Charge retention phenomena in CT silicon nitride: Impact of technology and operating conditions

G. Ghidini; N. Galbiati; Evelyne Mascellino; C. Scozzari; Alessandro Sebastiani; Salvatore M. Amoroso; C. Monzio Compagnoni; A.S. Spinelli; Alessandro Maconi; R. Piagge; A. Del Vitto; Mauro Alessandri; I. Baldi; E. Moltrasio; G. Albini; Alessandro Grossi; Paolo Tessariol; E. Camerlenghi; Aurelio Mauri

The aim of this work is to understand charge loss mechanisms in TANOS stack for which charge retention is monitored just after programming in an almost continuous way and voltage is applied during retention experiments in order to obtain zero electric field either on alumina or tunnel oxide. The charge loss mechanisms in TANOS stack can be a quite complicated process: An initial fast DT from interface traps localized at SiN/alumina interface, followed by charge loss through alumina from bulk traps in SiN which influences charge redistribution towards the tunnel oxide, observed only in Si-rich SiN. Programming voltage and stack composition impact trapped charge localization and hence charge redistribution and charge loss, even if the same initial Vfb is considered in charge retention experiments. While the charge loss through tunnel oxide is a DT, the charge loss through alumina depends on temperature and it is the main component of the charge loss in retention experiments for longer time.


IEEE Electron Device Letters | 2017

Comments on “A General and Transformable Model Platform for Emerging Multi-Gate MOSFETs”

Giovanni M. Paolucci; Alessandro S. Spinelli; Christian Monzio Compagnoni; Paolo Tessariol

Hong et al. [1] presented an analytical solution for the electrostatic potential in undoped cylindrical MOSFETs, which was then employed within a well-known Pao-Sah integral to yield the device current. This same analytical solution and drain current calculation were presented in 2016 [2] , but such work was not referenced by Hong et al. [1] .


Archive | 2008

INTEGRATION OF RESISTORS AND CAPACITORS IN CHARGE TRAP MEMORY DEVICE FABRICATION

Umberto M. Meotto; Paolo Tessariol


Archive | 2005

Method of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive coupling

Paolo Tessariol; Roberto Bez; Marcello Mariani


Archive | 2004

Methode of making a non-volatile MOS semiconductor memory device

Paolo Tessariol; Roberto Bez


Archive | 2012

METHOD OF FABRICATING A CHARGE TRAP NAND FLASH MEMORY DEVICE

Umberto M. Meotto; Giulio Albini; Paolo Tessariol; Paola Bacciaglia; Marcello Mariani


Archive | 2014

APPARATUS AND METHODS INCLUDING A BIPOLAR JUNCTION TRANSISTOR COUPLED TO A STRING OF MEMORY CELLS

Paolo Tessariol; Roberto Gastaldi


Archive | 2014

APPARATUSES AND METHODS COMPRISING A CHANNEL REGION HAVING DIFFERENT MINORITY CARRIER LIFETIMES

Paolo Tessariol; Aurelio Mauri; Akira Goda; Yijie Zhao


IEEE Transactions on Electron Devices | 2018

Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays—Part I: Polysilicon-Induced Variability

Davide Resnati; Aurelio Mannara; Gianluca Nicosia; Giovanni M. Paolucci; Paolo Tessariol; Alessandro S. Spinelli; Andrea L. Lacaita; Christian Monzio Compagnoni

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