Paolo Tessariol
Micron Technology
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Publication
Featured researches published by Paolo Tessariol.
IEEE Transactions on Electron Devices | 2016
Giovanni M. Paolucci; Alessandro S. Spinelli; Christian Monzio Compagnoni; Paolo Tessariol
We present a semianalytical model for the electrostatics and the current-voltage characteristics of Macaroni MOSFETs based on the exact solution of the Poisson equation, which is useful to investigate both the subthreshold and the ON-state regimes of these devices. With the addition of a simplified calculation of the tunneling current, the model is exploited to analyze the program performance of Macaroni NAND flash memories.
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena | 2011
G. Ghidini; N. Galbiati; Evelyne Mascellino; C. Scozzari; Alessandro Sebastiani; Salvatore M. Amoroso; C. Monzio Compagnoni; A.S. Spinelli; Alessandro Maconi; R. Piagge; A. Del Vitto; Mauro Alessandri; I. Baldi; E. Moltrasio; G. Albini; Alessandro Grossi; Paolo Tessariol; E. Camerlenghi; Aurelio Mauri
The aim of this work is to understand charge loss mechanisms in TANOS stack for which charge retention is monitored just after programming in an almost continuous way and voltage is applied during retention experiments in order to obtain zero electric field either on alumina or tunnel oxide. The charge loss mechanisms in TANOS stack can be a quite complicated process: An initial fast DT from interface traps localized at SiN/alumina interface, followed by charge loss through alumina from bulk traps in SiN which influences charge redistribution towards the tunnel oxide, observed only in Si-rich SiN. Programming voltage and stack composition impact trapped charge localization and hence charge redistribution and charge loss, even if the same initial Vfb is considered in charge retention experiments. While the charge loss through tunnel oxide is a DT, the charge loss through alumina depends on temperature and it is the main component of the charge loss in retention experiments for longer time.
IEEE Electron Device Letters | 2017
Giovanni M. Paolucci; Alessandro S. Spinelli; Christian Monzio Compagnoni; Paolo Tessariol
Hong et al. [1] presented an analytical solution for the electrostatic potential in undoped cylindrical MOSFETs, which was then employed within a well-known Pao-Sah integral to yield the device current. This same analytical solution and drain current calculation were presented in 2016 [2] , but such work was not referenced by Hong et al. [1] .
Archive | 2008
Umberto M. Meotto; Paolo Tessariol
Archive | 2005
Paolo Tessariol; Roberto Bez; Marcello Mariani
Archive | 2004
Paolo Tessariol; Roberto Bez
Archive | 2012
Umberto M. Meotto; Giulio Albini; Paolo Tessariol; Paola Bacciaglia; Marcello Mariani
Archive | 2014
Paolo Tessariol; Roberto Gastaldi
Archive | 2014
Paolo Tessariol; Aurelio Mauri; Akira Goda; Yijie Zhao
IEEE Transactions on Electron Devices | 2018
Davide Resnati; Aurelio Mannara; Gianluca Nicosia; Giovanni M. Paolucci; Paolo Tessariol; Alessandro S. Spinelli; Andrea L. Lacaita; Christian Monzio Compagnoni