Patricia P. C. Ho

Broadband small-signal model and parameter extraction for deep sub-micron MOSFETs valid up to 110 GHz

A broadband small-signal model suitable for deep sub-micron MOSFET high frequency applications and its parameter extraction have been proposed and demonstrated. Using a 110 GHz millimeter wave S-Parameter measurement, we directly extracted the parameters and fitted very well within a broad range from 45 MHz up to 110 GHz. This is a state-of-the-art technique that demonstrates the model up to 110 GHz and can be considered as an initial method for an optimization procedure to be used for more complete models.

On the millimeter-wave characteristics and model of on-chip interconnect transmission lines up to 110 GHz

On-chip microstrip and coplanar waveguide structures were designed and fabricated in RF CMOS foundry processes. The wideband transmission line characteristics such as characteristic impedance, attenuation constant, propagation delay, and their electrical RLC parameters were evaluated based on S-parameter measurements in the millimeter-wave range. In addition, a SPICE-compatible RLC lumped element model including the skin-effect and the substrate RC network is employed to account for transmission line effects in interconnect over a wide frequency range up to 110 GHz.

Characterization and model of on-chip flicker noise with deep Nwell (DNW) isolation for 130nm and beyond SOC

An investigation of the flicker noise, by exploring 0.13 /spl mu/m and beyond MS/RF CMOS technology, was carried out for wireless system-on-a-chip (SOC) applications. The on-chip flicker noise of various components are characterized and accurately modeled. The feasibility of deep N-well isolation to suppress substrate coupling of analog nodes from digital clock noise is also demonstrated.

BSIM4 high-frequency model verification for 0.13 /spl mu/m RF-CMOS technology

A compact model capable of simulating both DC and RF characteristics is highly desirable. This work is the first report of an extensive experimental evaluation of the accuracy of the BSIM4 model at high frequencies using a 0.13 /spl mu/m RF-CMOS process. The accuracy of the model is verified on both N-channel and P-channel devices through small-signal S-parameter measurements up to 50 GHz, 1/f noise measurements, and noise figure measurements in the 2-GHz to 6-GHz range.

An investigation of the RF/analog characteristics of multiple variants SiGe HBTs for optical and wireless applications

Multiple variants of SiGe HBTs, using selected collector implants, suitable for wired and wireless applications were explored. The RF/analog characteristics of HBTs featured with fT/BV/sub CEO/ values of 130 GHz/2.3 V, 80 GHz/3.4 V and 60 GHz/ 4.8 V were characterized. The dependence of bias, temperature, frequency, noise, power, and geometry were investigated to provide designers with appropriate performance-breakdown design coverage and flexibility.

Characterization and model of high quality factor and broadband integrated inductor on Si-substrate

Proton bombardment has been used to boost the on-chip inductor quality factor and to also improve the frequency response. In this paper we demonstrated these advantages using the 0.13/spl mu/m and 0.18/spl mu/m RF CMOS processes. Based on the model, we evaluated how the performance improved using bombardment technology. A simultaneously impressive increase both in the peak Q-value and the optimal frequency have been evidenced due to its significantly reduced substrate parasitic effect as a result of higher substrate resistivity. This can be considered as a solution to integrate inductor on a Si substrate.

Characterization and model of 4-terminal RF CMOS with bulk effect

Special test structures using separated source and bulk contacts with the 3/sup rd/ GSG probe for the substrate bias are described. These test structures allow characterizing 4-terminal MOSFETs with a standard two-port Network Analyzer. The high-frequency behavior of bulk effect in MOSFETs is studied at different bias conditions for a 0.18 /spl mu/m RF CMOS technology. Measurement result of RF NMOSFET shows that a good accuracy of the 4-terminal RF MOSFET modeling is achieved. The validity and accuracy of our approach is verified and analyzed from two-port Y-parameter results.

CR018 Wideband Noise Model for AMS/RF CMOS Simulation

The experimental verification of CR018 wideband noise model for AMS/RF CMOS simulation was achieved using the BSIM3v3 flicker noise model, SPICE2 thermal noise model, and induced gate and bulk noises as well. Among which, independent flicker noise corner model scaling with device size was developed to enable low power design. Moreover, the corner frequency was measured experimentally and validated with model simulation. As to the high frequency thermal noise model, we measured the noise figure with varying gate length and compared with model simulations of SPICE2 and BSIM3v3. A good fit of SPICE2 is achieved using a theoretical value of gamma=2/3 even for the shortest channel length of 0.1 Sum. An effective gamma less than 2/3 derived from BSIM3v3 was obtained. In addition, we observed that the induced gate and bulk noises are important in high frequency as the device sized up. Finally, we sanity checked the developed wideband noise model with switched capacitor and VCO phase noise.

Foundry 0.13 /spl mu/m CMOS modeling for MS//spl mu/wave SOC design at 10 GHz and beyond

The paper reports on the first unitary set of geometry-scalable, wide-band compact models for all the components of a 0.13 /spl mu/m RF CMOS technology and which are valid up to 50 GHz. Verification of the active and passive device models is achieved at the device level as well as by comparing measurements and simulation results of the S-parameter response and jitter generation of high-speed circuits operating above 10 GHz from a single 1.2 V supply.

On the High-Frequency Characteristics and Model of Bulk Effect in RF MOSFETs

The new design with minimum loop inductance suitable for the measurements at high frequencies with substrate bias is described. These test structures allow characterizing 4-tenninal MOSFETs with a standard two-port Network Analyzer. The high-frequency behavior of bulk effect in MOSFETs is studied at different bias conditions for a 0.18 μm RF CMOS technology. The BSIM3 extension RF MOSFET modeling with bulk effect is verified and analyzed from two-port Y-parameter results. The result of RF NMOSFET shows that a good accuracy of the 4-terminal RF MOSFET modeling is achieved.