Patrick Maury

The role of ultraviolet radiation during ultralow k films curing: Strengthening mechanisms and sacrificial porogen removal

This work proposes a fundamental understanding of structural transformation occurring during porogen extraction from as-deposited ultralow k (ULK) materials when exposed to ultraviolet (UV) radiation during thermal curing. Specific explanations are provided for as deposited films at high temperature (T>250 °C). This temperature range is sufficient to assess thin-film stability. Two distinguished regimes were identified in the curing process. During the first stage, the film shrinks strongly in similar proportion to SiCH3 break. Preferential impact of UV radiation on hydrocarbon porogen bonds leads also to a break of SiCH3 structures. In this work, 5 min of curing is enough to remove the porogen and create the max of porosity (33%). After the porogen removal step, the porous film shrinks under UV radiation leading to an increase of SiOSi bond concentration. A structural rearrangement of the bulk is initiated since the porogen is totally evacuated from the film. The increase of normalized infrared SiOSi pea...

Overview of several applications of chemical downstream etching (CDE) for IC manufacturing: advantages and drawbacks versus WET processes

Today the IC manufacturing faces lots of problematics linked to the continuous down scaling of printed structures. Some of those issues are related to wet processing, which are often used in the IC manufacturing flow for wafer cleaning, material etching and surface preparation. In the current work we summarize the limitations for the next nodes of wet processing such as metallic contaminations, wafer charging, corrosion and pattern collapse. As a replacement, we promoted the isotropic chemical dry etching (CDE) which is supposed to fix all the above drawbacks. Etching steps of SI3N4 layers were evaluated in order to prove the interest of such technique.