Paul E. Bakeman

Ion implantation electron flooding requirements from a user's perspective

Abstract Electrical charging of semiconductor wafer surfaces during high dose ion implantation is reviewed. Of the four phenomena examined — implant nonuniformity, electrostatic charging forces, vacuum electrostatic discharges and dielectric breakdown — dielectric breakdown was found to produce the most severe implant requirements. Observations are made on two double polysilicon experimental lots implanted using different implant and electron flooding conditions.