Pengyu Fan

Dielectric gradient metasurface optical elements

Extending the range of planar optics To build miniature optical devices, scientists are using silicon to replace bulky three-dimensional devices with flat versions. A patterned surface consisting of dense arrays of nanoscale silicon strips, which act as antennae, can be designed to work as transparent optical devices for the manipulation of light. Lin et al. used their versatile patterning technique to create a suite of planar optical elements. By patterning a 100-nm layer of silicon into a dense arrangement of nano-antennae, they were able to fabricate gratings, lenses, and axicons—a device that can add a shape to a propagating light beam. Science, this issue p. 298 Silicon-based metasurfaces can extend the range of planar optical devices. Gradient metasurfaces are two-dimensional optical elements capable of manipulating light by imparting local, space-variant phase changes on an incident electromagnetic wave. These surfaces have thus far been constructed from nanometallic optical antennas, and high diffraction efficiencies have been limited to operation in reflection mode. We describe the experimental realization and operation of dielectric gradient metasurface optical elements capable of also achieving high efficiencies in transmission mode in the visible spectrum. Ultrathin gratings, lenses, and axicons have been realized by patterning a 100-nanometer-thick Si layer into a dense arrangement of Si nanobeam antennas. The use of semiconductors can broaden the general applicability of gradient metasurfaces, as they offer facile integration with electronics and can be realized by mature semiconductor fabrication technologies.

Semiconductor nanowire optical antenna solar absorbers.

Photovoltaic (PV) cells can serve as a virtually unlimited clean source of energy by converting sunlight into electrical power. Their importance is reflected in the tireless efforts that have been devoted to improving the electrical and structural properties of PV materials. More recently, photon management (PM) has emerged as a powerful additional means to boost energy conversion efficiencies. Here, we demonstrate an entirely new PM strategy that capitalizes on strong broad band optical antenna effects in one-dimensional semiconductor nanostructures to dramatically enhance absorption of sunlight. We show that the absorption of sunlight in Si nanowires (Si NWs) can be significantly enhanced over the bulk. The NWs optical properties also naturally give rise to an improved angular response. We propose that by patterning the silicon layer in a thin film PV cell into an array of NWs, one can boost the absorption for solar radiation by 25% while utilizing less than half of the semiconductor material (250% increase in the light absorption per unit volume of material). These results significantly advance our understanding of the way sunlight is absorbed by one-dimensional semiconductor nanostructures and provide a clear, intuitive guidance for the design of efficient NW solar cells. The presented approach is universal to any semiconductor and a wide range of nanostructures; as such, it provides a new PV platform technology.

Resonant Germanium Nanoantenna Photodetectors

On-chip optical interconnection is considered as a substitute for conventional electrical interconnects as microelectronic circuitry continues to shrink in size. Central to this effort is the development of ultracompact, silicon-compatible, and functional optoelectronic devices. Photodetectors play a key role as interfaces between photonics and electronics but are plagued by a fundamental efficiency-speed trade-off. Moreover, engineering of desired wavelength and polarization sensitivities typically requires construction of space-consuming components. Here, we demonstrate how to overcome these limitations in a nanoscale metal-semiconductor-metal germanium photodetector for the optical communications band. The detector capitalizes on antenna effects to dramatically enhance the photoresponse (>25-fold) and to enable wavelength and polarization selectivity. The electrical design featuring asymmetric metallic contacts also enables ultralow dark currents (approximately 20 pA), low power consumption, and high-speed operation (>100 GHz). The presented high-performance photodetection scheme represents a significant step toward realizing integrated on-chip communication and manifests a new paradigm for developing miniaturized optoelectronics components.

Tuning the Color of Silicon Nanostructures

Empowering silicon (Si) with optical functions constitutes a very important challenge in photonics. The scalable fabrication capabilities for this earth-abundant, environmentally friendly material are unmatched in sophistication and can be unleashed to realize a plethora of high-performance photonic functionalities that find application in information, bio-, display, camouflage, ornamental, and energy technologies. Nanofashioning represents a general strategy to turn Si into a useful optical material and Si structures have already been engineered to enable light emission, optical cloaking, waveguiding, nonlinear optics, enhanced light absorption, and sensing. Here, we demonstrate that a wide spectrum of colors can be generated by harnessing the strong resonant light scattering properties of Si nanostructures under white light illumination. The ability to engineer such colors in a predetermined fashion through a choice of the structure size, dielectric environment, and illumination conditions opens up entirely new applications of Si and puts this material in a new light.

Optical Coupling of Deep-Subwavelength Semiconductor Nanowires

Systems of coupled resonators manifest a myriad of exciting fundamental physical phenomena. Analogous to the synthesis of molecules from single atoms, the construction of photonic molecules from stand-alone optical resonators represents a powerful strategy to realize novel functionalities. The coupling of high quality factor (Q) dielectric and semiconductor microresonators is by now well-understood and chipscale applications are abound. The coupling behavior of low-Q nanometallic structures has also been exploited to realize high-performance plasmonic devices and metamaterials. Although dense arrays of semiconductor nanoparticles and nanowires (NWs) find increasing use in optoelectronic devices, their photonic coupling has remained largely unexplored. These high refractive index nano-objects can serve as low-Q optical antennas that can effectively receive and broadcast light. We demonstrate that the broad band antenna response of a pair of NWs can be tuned significantly by engineering their optical coupling and develop an intuitive coupled-mode theory to explain our observations.

Redesigning Photodetector Electrodes as an Optical Antenna

At the nanoscale, semiconductor and metallic structures naturally exhibit strong, tunable optical resonances that can be utilized to enhance light-matter interaction and to dramatically increase the performance of chipscale photonic elements. Here, we demonstrate that the metallic leads used to extract current from a Ge nanowire (NW) photodetector can be redesigned to serve as optical antennas capable of concentrating light in the NW. The NW itself can also be made optically resonant and an overall performance optimization involves a careful tuning of both resonances. We show that such a procedure can result in broadband absorption enhancements of up to a factor 1.7 at a target wavelength of 660 nm and an ability to control the detectors polarization-dependent response. The results of this study demonstrate the critical importance of performing a joint optimization of the electrical and optical properties of the metallic and semiconductor building blocks in optoelectronic devices with nanoscale components.

An Electrically-Driven GaAs Nanowire Surface Plasmon Source

Over the past decade, the properties of plasmonic waveguides have extensively been studied as key elements in important applications that include biosensors, optical communication systems, quantum plasmonics, plasmonic logic, and quantum-cascade lasers. Whereas their guiding properties are by now fairly well-understood, practical implementation in chipscale systems is hampered by the lack of convenient electrical excitation schemes. Recently, a variety of surface plasmon lasers have been realized, but they have not yet been waveguide-coupled. Planar incoherent plasmonic sources have recently been coupled to plasmonic guides but routing of plasmonic signals requires coupling to linear waveguides. Here, we present an experimental demonstration of electrically driven GaAs nanowire light sources integrated with plasmonic nanostrip waveguides with a physical cross-section of 0.08λ(2). The excitation and waveguiding of surface plasmon-polaritons (SPPs) is experimentally demonstrated and analyzed with the help of full-field electromagnetic simulations. Splitting and routing of the electrically generated SPP signals around 90° bends are also shown. The realization of integrated plasmon sources greatly increases the applicability range of plasmonic waveguides and routing elements.

Creating semiconductor metafilms with designer absorption spectra

The optical properties of semiconductors are typically considered intrinsic and fixed. Here we leverage the rapid developments in the field of optical metamaterials to create ultrathin semiconductor metafilms with designer absorption spectra. We show how such metafilms can be constructed by placing one or more types of high-index semiconductor antennas into a dense array with subwavelength spacings. It is argued that the large absorption cross-section of semiconductor antennas and their weak near-field coupling open a unique opportunity to create strongly absorbing metafilms whose spectral absorption properties directly reflect those of the individual antennas. Using experiments and simulations, we demonstrate that near-unity absorption at one or more target wavelengths of interest can be achieved in a sub-50-nm-thick metafilm using judiciously sized and spaced Ge nanobeams. The ability to create semiconductor metafilms with custom absorption spectra opens up new design strategies for planar optoelectronic devices and solar cells.

Subwavelength angle-sensing photodetectors inspired by directional hearing in small animals

Sensing the direction of sounds gives animals clear evolutionary advantage. For large animals, with an ear-to-ear spacing that exceeds audible sound wavelengths, directional sensing is simply accomplished by recognizing the intensity and time differences of a wave impinging on its two ears1. Recent research suggests that in smaller, subwavelength animals, angle sensing can instead rely on a coherent coupling of soundwaves between the two ears2–4. Inspired by this natural design, here we show a subwarvelength photodetection pixel that can measure both the intensity and incident angle of light. It relies on an electrical isolation and optical coupling of two closely spaced Si nanowires that support optical Mie resonances5–7. When these resonators scatter light into the same free-space optical modes, a non-Hermitian coupling results that affords highly sensitive angle determination. By straightforward photocurrent measurements, we can independently quantify the stored optical energy in each nanowire and relate the difference in the stored energy between the wires to the incident angle of a light wave. We exploit this effect to fabricate a subwavelength angle-sensitive pixel with angular sensitivity, δθ = 0.32°.Two Si resonators couple through a non-Hermitian interaction to sense both the intensity and the incident angle of light with subwavelength resolution.

Engineering optical properties of semiconductor metafilm superabsorbers

Light absorption in ultrathin layer of semiconductor has been considerable interests for many years due to its potential applications in various optical devices. In particular, there have been great efforts to engineer the optical properties of the film for the control of absorption spectrums. Whereas the isotropic thin films have intrinsic optical properties that are fixed by materials’ properties, metafilm that are composed by deep subwavelength nano-building blocks provides significant flexibilities in controlling the optical properties of the designed effective layers. Here, we present the ultrathin semiconductor metafilm absorbers by arranging germanium (Ge) nanobeams in deep subwavelength scale. Resonant properties of high index semiconductor nanobeams play a key role in designing effective optical properties of the film. We demonstrate this in theory and experimental measurements to build a designing rule of efficient, controllable metafilm absorbers. The proposed strategy of engineering optical properties could open up wide range of applications from ultrathin photodetection and solar energy harvesting to the diverse flexible optoelectronics.