Rajesh N. Gupta
Micron Technology
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Rajesh N. Gupta.
international electron devices meeting | 2005
Hyun-jin Cho; Farid Nemati; R. Roy; Rajesh N. Gupta; Kevin J. Yang; M. Ershov; S. Banna; M. Tarabbia; C. Sailing; D. Hayes; A. Mittal; Scott Robins
A capacitor-less DRAM cell using a thin capacitively-coupled thyristor (TCCT DRAM) is introduced. Experimental results from unit memory cell fabricated in a 130nm SOI logic technology demonstrate Ion/Ioff ratio of 107, non-destructive read; write speed less than 2ns at 125C, and solid retention characteristics. These cell characteristics combined with a small cell area (as low as 9F2) and simple process integration make TCCT DRAM a suitable candidate for high-performance high-density embedded or standalone memory applications
international reliability physics symposium | 2009
Craig Salling; Kevin J. Yang; Rajesh N. Gupta; Dennis Hayes; Janice Tamayo; Vasudevan Gopalakrishnan; Scott Robins
This is the first published study of the reliability of Thyristor-based high-speed memories. The T-RAM (Thyristor-based Random Access Memory) was characterized using test structures and multi-megabit product die fabricated in a 130nm SOI logic technology. The reliability lifetime of a nominal bit was investigated by subjecting TCCT devices (Thin Capacitively Coupled Thyristor) to a DC current stress. The resulting acceleration model yields a lifetime of 1.0E+40 yrs for the Data-1 state and 1.0E+5 yrs for the Data-0 state. These long lifetimes are consistent with the 26 FIT long-term failure rate found for 9 Mb arrays, from dynamic lifetest on 9Mb & 18Mb T-RAM product die having full SRAM functionality. The susceptibility of T-RAM arrays to soft errors was assessed by accelerated neutron testing, and accelerated alpha testing, of 9Mb T-RAM product die as well as 9Mb SRAM product die from three suppliers. n-SER for the T-RAM is 610 FIT/Mb, better than the average of 700 FIT/Mb for 6T SRAM technology. Exposure of the T-RAM product die to X-rays showed that they tolerate doses of 450 rad or more (3–4x the dose for X-ray inspections) without degradation of nominal TCCT retention times, and without functional failure of memory cells. Taken together, the results of this study shows that T-RAM is a reliable memory technology.
international electron devices meeting | 2010
Rajesh N. Gupta; Farid Nemati; Scott Robins; Kevin J. Yang; Vasudevan Gopalakrishnan; Joseph John Sundarraj; Rajesh Chopra; Rich Roy; Hyun-jin Cho; W. Maszara; Nihar R. Mohapatra; John J. Wuu; Don Weiss; Sam Nakib
Thyristor Random Access Memory (T-RAM) is an ideal candidate for application as an embedded memory due to its substantially better density vs. performance tradeoff and logic process compatibility [1–3]. T-RAM memory embedded in a 32nm logic process with read and write times of 1ns and a bit fail rate less than 0.5ppm is reported for the first time. T-RAM memory cell median read current of 250µA/cell at 1.2V with an Ion/Ioff current ratio of more than 108 is demonstrated at 105°C. Robust margins to dynamic disturb due to the access (read/write) of neighboring bits in the memory array have also been verified.
international electron devices meeting | 2004
Farid Nemati; Hyun-jin Cho; Scott Robins; Rajesh N. Gupta; M. Tarabbia; Kevin J. Yang; D. Hayes; Vasudevan Gopalakrishnan
Major advancements in T-RAM cell manufacturability are reported. A fully planar implementation of a T-RAM cell is presented, which is easily integrated into a baseline 130nm SOI CMOS logic technology by adding photo-mask and ion-implantation steps. The cell area of 0.562/spl mu/m/sup 2/ (33F/sup 2/) is four times smaller than conventional 6T-SRAM. A new scheme, called Restore, significantly improves control of the cell standby current. Excellent T-RAM cell temperature stability is demonstrated between 0/spl deg/C and 125/spl deg/C. Measurement results from a 9Mb T-RAM test chip with full SRAM functionality show good bit yield, 2ns cell write speed, 1.7ns cell read speed, and a cell standby current of /spl sim/1nA/cell.
Archive | 2005
Andrew Horch; Hyun-jin Cho; Farid Nemati; Scott Robins; Rajesh N. Gupta; Kevin J. Yang
Archive | 2012
Rajesh N. Gupta; Farid Nemati; Scott Robins
Archive | 2012
Farid Nemati; Scott Robins; Rajesh N. Gupta
Archive | 2004
Rajesh N. Gupta; Scott Robins
Archive | 2013
Kamal M. Karda; Rajesh N. Gupta; Srinivas Pulugurtha; Chandra Mouli; Wolfgang Mueller
Archive | 2011
Rajesh N. Gupta; Marc Laurent Tarabbia; Kevin J. Yang