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Dive into the research topics where Reinhard Dr. Stengl is active.

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Featured researches published by Reinhard Dr. Stengl.


international solid-state circuits conference | 1993

25 to 40 Gb/s Si ICs in selective epitaxial bipolar technology

A. Felder; Reinhard Dr. Stengl; J. Hauenschild; H.-M. Rein; Thomas Meister

High-speed digital ICs as decision circuits, time-division multiplexers (MUX), demultiplexers (DEMUX), and frequency dividers are key components for multigigabit-per-second optical-fiber links. While advanced silicon bipolar technology meets the demands for all electronic components of 10-Gb/s direct detection transmission links now in development, there is a question whether the situation will change at transmission rates of 20 Gb/s. The authors try to answer this question by presenting the above key components with record operating speeds. A silicon bipolar technology with selective epitaxial growth (SEG) of the active base and collector regions is used for circuit fabrication. A static 16:1 low-power frequency divider demonstrates the low-power capability of the SEG technology. All measured data rates and frequencies are significantly higher than reported values for silicon ICs and, with one exception, even for III-V ICs. The 40 Gb/s measured with the DEMUX is the highest data rate achieved with an IC in any technology.<<ETX>>


Archive | 1993

Process for production of a laterally limited monocrystal area by selective epitaxy and its application for production of a bipolar transistor as well as well as a MOS-transistor

T.F. Meister; Reinhard Dr. Stengl


Electronics Letters | 1993

25 Gbit/s decision circuit, 34 Gbit/s multiplexer, and 40 Gbit/s demultiplexer IC in selective epitaxial Si bipolar technology

A. Felder; Reinhard Dr. Stengl; J. Hauenschild; H.-M. Rein; T.F. Meister


Archive | 1996

Method of producing capacitors in a semiconductor device

Reinhard Dr. Stengl; Martin Franosch; Hermann Wendt


Electronics Letters | 1993

Static frequency dividers for high operating speed (25 GHz, 170 mW) and low power consumption (16 GHz, 8 mW) in selective epitaxial Si bipolar technology

A. Felder; Reinhard Dr. Stengl; J. Hauenschild; H.-M. Rein; T.F. Meister


Archive | 1992

Process for the manufacture of a side-limited monocrystalline region in a bipolar transistor

H. Klose; Thomas Dr. Meister; Hans-Willi Meul; Reinhard Dr. Stengl


Archive | 1998

Method of forming a DRAM trench capacitor

Martin Franosch; Wolfgang Hönlein; H. Klose; Gerrit Lange; Volker Lehmann; Hans Reisinger; H. Schafer; Reinhard Dr. Stengl; Hermann Wendt; Dietrich Dr Ing Widmann


Archive | 1994

Fabrication process of a solar cell from a wafer substrate.

Volker Lehmann; Reinhard Dr. Stengl; Hermann Wendt; Wolfgang Hönlein; Josef Willer


Archive | 1993

Method of production of a porous silicon device

Reinhard Dr. Stengl; Wolfgang Hönlein; Volker Lehmann; Andreas Spitzer


european solid state device research conference | 1993

Selective Epitaxial Bipolar Technology for 25 to 40 Gb/s ICs

T.F. Meister; Reinhard Dr. Stengl; A. Felder; H.-M. Rein; L. Treitinger

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