Richard Bojko

Demonstration of a low V π L modulator with GHz bandwidth based on electro-optic polymer-clad silicon slot waveguides

We demonstrate a near-infrared electro-optic modulator with a bandwidth of 3 GHz and a V(pi)L figure of merit of 0.8 V-cm using a push-pull configuration. This is the highest operating speed achieved in a silicon-polymer hybrid system to date by several orders of magnitude. The modulator was fabricated from a silicon strip-loaded slot waveguide and clad in a nonlinear polymer. In this geometry, the electrodes form parts of the waveguide, and the modulator driving voltage drops across a 200 nm slot.

Focusing sub-wavelength grating couplers with low back reflections for rapid prototyping of silicon photonic circuits

We demonstrate fully-etched fiber-waveguide grating couplers with sub-wavelength gratings showing high coupling efficiency as well as low back reflections for both transverse electric (TE) and transverse magnetic (TM) modes. The power reflection coefficients for the TE and TM modes have been significantly suppressed to -16.2 dB and -20.8 dB, respectively. Focusing grating lines have also been used to reduce the footprint of the design. Our sub-wavelength grating couplers for the TE and TM modes show respective measured insertion losses of 4.1 dB and 3.7 dB with 1-dB bandwidths of 30.6 nm (3-dB bandwidth of 52.3 nm) and 47.5 nm (3-dB bandwidth of 81.5 nm), respectively.

Electron beam lithography writing strategies for low loss, high confinement silicon optical waveguides

The authors present a robust process for fabricating passive silicon photonic components by direct-write electron beam lithography (EBL). Using waveguide transmission loss as a metric, we study the impact of EBL writing parameters on waveguide performance and writing time. As expected, write strategies that reduce sidewall roughness improve waveguide loss and yield. In particular, averaging techniques such as overlap or field shift writing reduce loss, however, the biggest improvement comes from writing using the smaller field-size option of our EBL system. The authors quantify the improvement for each variation and option, along with the tradeoff in writing time.

Low-loss strip-loaded slot waveguides in Silicon-on-Insulator

Electro-optic polymer-clad silicon slot waveguides have recently been used to build a new class of modulators, that exhibit very high bandwidths and extremely low drive voltages. A key step towards making these devices practical will be lowering optical insertion losses. We report on the first measurements of low-loss waveguides that are geometrically suitable for high bandwidth slot waveguide modulators: a strip-loaded slot waveguide. Waveguide loss for undoped waveguides of 6.5 ± 0.2 dB/cm was achieved with 40 nm thick strip-loading, with the full silicon thickness around 220 nm and a slot size of 200 nm, for wavelengths near 1550 nm.

Focusing-curved subwavelength grating couplers for ultra-broadband silicon photonics optical interfaces

We report on the design and characterization of focusing-curved subwavelength grating couplers for ultra-broadband silicon photonics optical interfaces. With implementation of waveguide dispersion engineered subwavelength structures, an ultra-wide 1-dB bandwidth of over 100 nm (largest reported to date) near 1550 nm is experimentally achieved for transverse-electric polarized light. By tapering the subwavelength structures, back reflection is effectively suppressed and grating coupling efficiency is increased to -4.7 dB. A compact device footprint of 40 µm × 20 µm is realized by curving the gratings in a focusing scheme.

Low-loss asymmetric strip-loaded slot waveguides in silicon-on-insulator

We report on low-loss asymmetric strip-loaded slot waveguides in silicon-on-insulator fabricated with 248 nm photolithography. Waveguide losses were 2 dB/cm or less at wavelengths near 1550 nm. A 40 nm strip-loading allows low-resistance electrical contact to be made to the two slot arms. The asymmetric design suppresses the TE1 mode while increasing the wavelength range for which the TE0 mode guides. This type of waveguide is suitable for building low insertion-loss, high-bandwidth, low drive-voltage modulators, when coated with an electro-optic polymer cladding.

Photolithographically fabricated low-loss asymmetric silicon slot waveguides.

We demonstrate low-loss asymmetric slot waveguides in silicon-on-insulator (SOI). 130 and 180 nm wide slots were fabricated with a 248 nm stepper, in 200 nm thick silicon. An asymmetric waveguide design is shown to expand the range in which the TE0 mode is guided and suppress the TE1 mode, while still maintaining a sharp concentration of electric field in the center of the slot. Optical propagation losses of 2 dB/cm or less are shown for asymmetric slot waveguides with 130 nm wide slots and 320 and 100 nm wide arms.

Precise control of the coupling coefficient through destructive interference in silicon waveguide Bragg gratings

We present waveguide Bragg gratings with misaligned sidewall corrugations on a silicon-on-insulator platform. The grating strength can be tuned by varying the misalignment between the corrugations on the two sidewalls. This approach allows for a wide range of grating coupling coefficients to be achieved with precise control, and substantially reduces the effects of quantization error due to the finite mask grid size. The experimental results are in very good agreement with simulations using the finite-difference time-domain (FDTD) method.

Design of broadband subwavelength grating couplers with low back reflection

We present a methodology to design broadband grating couplers using one-dimensional subwavelength gratings. Using the presented method, we design subwavelength grating couplers (SWGCs) with 1-dB bandwidths ranging from 50 to 90 nm. Our designed SWGCs have competitive coupling efficiency, as high as -3.8  dB for the fundamental TE mode, and state-of-the-art back reflections, as low as -23  dB.

Apodized Focusing Fully Etched Subwavelength Grating Couplers

We experimentally demonstrate apodized focusing subwavelength grating couplers for both the fundamental transverse electric (TE₀₀) mode and the fundamental transverse magnetic (TM₀₀) mode. A measured insertion loss of 3.2 dB with a 1-dB bandwidth of 36 nm has been obtained for the TE₀₀ mode, and a measured insertion loss of 3.3 dB with a 1-dB bandwidth of 37 nm has been obtained for the TM₀₀ mode. Back reflections of -24 dB and -21 dB have been obtained for the TE₀₀ and TM₀₀ modes, respectively.