Richard Lindsay

Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology

Gate-induced-drain-leakage (GIDL) current in 45-nm state-of-the-art MOSFETs is characterized in detail. For the current technology node with a 1.2-V power-supply voltage, the GIDL current is found to increase in MOSFETs with higher channel-doping levels. In contrast to the classical GIDL current generated in the gate-to-drain overlap region, the observed GIDL current is generated by the tunneling of electrons through the reverse-biased channel-to-drain p-n junction. A band-to-band tunneling model is used to fit the measured GIDL currents under different channel-doping levels and bias conditions. Good agreement is obtained between the modeled results and experimental data. In addition, the dependence of the GIDL current on body bias, lateral electric field, channel width, and temperature is characterized and discussed.

Shallow Trench Isolation for the 45-nm CMOS Node and Geometry Dependence of STI Stress on CMOS Device Performance

In the present work, a high aspect ratio process (HARP) using a new O3/TEOS based sub atmospheric chemical vapor deposition process was implemented as STI gapfill in sub-65-nm CMOS. Good gapfill performance up to aspect ratios greater than 10:1 was demonstrated. Since the HARP process does not attack the STI liner as compared to HDP, a variety of different STI liners can be implemented. By comparing HARP with HDP, the geometry dependence of nand p-FET performance due to STI stress is discussed

Characterization and analysis of gate-induced-drain-leakage current in 45 nm CMOS technology

Gate-induced-drain-leakage (GIDL) current in 45 nm state-of-the-art MOSFETs is characterized in detail. For the current technology node with a 1.2 V power-supply voltage, the GIDL current is found to increase in MOSFETs with higher channel-doping levels. In contrast to the classical GIDL current generated in the gate-to-drain overlap region, the observed GIDL current is generated by the tunneling of electrons through the reverse-biased channel-to-drain p-n junction. A band-to-band tunneling model is used to fit the measured GIDL currents under different channel-doping levels and bias conditions. Good agreement is obtained between the modeled results and experimental data.