Richard Stutz

The Millipede: more than one thousand tips for future AFM data storage

We report on a new atomic force microscope (AFM)-based data storage concept called the “Millipede” that has a potentially ultrahigh density, terabit capacity, small form factor, and high data rate. Its potential for ultrahigh storage density has been demonstrated by a new thermomechanical local-probe technique to store and read back data in very thin polymer films. With this new technique, 30–40-nm-sized bit indentations of similar pitch size have been made by a single cantilever/tip in a thin (50-nm) polymethylmethacrylate (PMMA) layer, resulting in a data storage density of 400–500 Gb/in. 2 High data rates are achieved by parallel operation of large two-dimensional (2D) AFM arrays that have been batch-fabricated by silicon surface-micromachining techniques. The very large scale integration (VLSI) of micro/nanomechanical devices (cantilevers/tips) on a single chip leads to the largest and densest 2D array of 32 × 32 (1024) AFM cantilevers with integrated write/read storage functionality ever built. Time-multiplexed electronics control the write/read storage cycles for parallel operation of the Millipede array chip. Initial areal densities of 100–200 Gb/in. 2 have been achieved with the 32 × 32 array chip, which has potential for further improvements. In addition to data storage in polymers or other media, and not excluding magnetics, we envision areas in nanoscale science and technology such as lithography, high-speed/large-scale imaging, molecular and atomic manipulation, and many others in which Millipede may open up new perspectives and opportunities.

VLSI-NEMS chip for parallel AFM data storage

Abstract We report the microfabrication of a 32×32 (1024) 2D cantilever array chip and its electrical testing. It has been designed for ultrahigh-density, high-speed data storage applications using thermomechanical writing and readout in thin polymer film storage media. The fabricated chip is the first very large scale integration (VLSI)-NEMS (NanoEMS) for nanotechnological applications. For electrical and thermal stability, the levers are made of silicon, and the heater/sensor element is defined as a lower, doped platform with the tip on top. Freestanding cantilevers are obtained with surface-micromachining techniques, which yield better mechanical stability and heatsinking of the chip than bulk-micromachining releasing techniques do. Two-wiring levels interconnect the cantilevers for a time-multiplexed row/column addressing scheme. By integrating a Schottky diode in series with each cantilever, a considerable reduction of crosstalk between cantilevers has been achieved.

Probe-based ultrahigh-density storage technology

Ultrahigh storage densities can be achieved by using a thermomechanical scanning-probe-based data-storage approach to write, read back, and erase data in very thin polymer films. High data rates are achieved by parallel operation of large two-dimensional arrays of cantilevers that can be batch fabricated by silicon-surface micromachining techniques. The very high precision required to navigate the storage medium relative to the array of probes is achieved by microelectromechanical system (MEMS)- based x and y actuators. The ultrahigh storage densities offered by probe-storage devices pose a significant challenge in terms of both control design for nanoscale positioning and read-channel design for reliable signal detection. Moreover, the high parallelism necessitates new dataflow architectures to ensure high performance and reliability of the system. In this paper, we present a small-scale prototype system of a storage device that we built based on scanning-probe technology. Experimental results of multiple sectors, recorded using multiple levers at 840 Gb/in2 and read back without errors, demonstrate the functionality of the prototype system. This is the first time a scanning-probe recording technology has reached this level of technical maturity, demonstrating the joint operation of all building blocks of a storage device.

Highly parallel data storage system based on scanning probe arrays

This letter discusses an alternative storage approach to conventional magnetic data storage. The approach uses a 32×32 array of scanning probe microscopes working in parallel to read and write data as small indentations in a polymer storage medium. The results have densities of 100–200 Gbit/in.2. At such densities, it is shown that well over half the array works, and at lower densities more than 80% of levers are working.

Transition-metal-oxide-based resistance-change memories

We provide a status report on the development of perovskite-based transition-metal-oxide resistance-change memories. We focus on bipolar resistance switching observed in Cr-doped SrTiO3 memory cells with dimensions ranging from bulk single crystals to CMOS integrated nanoscale devices. We also discuss electronic and ionic processes during electroforming and resistance switching, as evidenced from electron-parametric resonance (EPR), x-ray absorption spectroscopy, electroluminescence spectroscopy, thermal imaging, and transport experiments. EPR in combination with electroluminescence reveals electron trapping and detrapping processes at the Cr site. Results of x-ray absorption experiments prove that the microscopic origin of the electroforming, that is, the insulator-to-metal transition, is the creation of oxygen vacancies. Cr-doped SrTiO3 memory cells exhibit short programming times (≤100 ns) and low programming currents (<100 µA) with up to 105 write and erase cycles.

Precise Placement of Gold Nanorods by Capillary Assembly

Capillary assembly was explored for the precise placement of 25 nm × 70 nm colloidal gold nanorods on prestructured poly(dimethylsiloxane) template surfaces. The concentration of nanorods and cationic surfactant cetyltrimethylammonium bromide (CTAB), the template wettability, and most critically the convective transport of the dispersed nanorods were tuned to study their effect on the resulting assembly yield. It is shown that gold nanorods can be placed into arrayed 120-nm diameter holes, achieving assembly yields as high as 95% when the local concentration of nanorods at the receding contact line is sufficiently high. Regular arrays of gold nanorods have several benefits over randomly deposited nanorod arrangements. Each assembled nanorod resides at a precisely defined location and can easily be found for subsequent characterization or direct utilization in a device. The former is illustrated by collecting scattering spectra from single nanorods and nanorod dimers, followed by subsequent SEM characterization without the need for intricate registration schemes.

Wafer-Level Transfer Technologies for PZT-Based RF MEMS Switches

We report on wafer-level transfer technologies to integrate PZT-based radio frequency (RF) microelectromechanical-systems switches on CMOS. Such heterogeneous integration can overcome the incompatibility of PZT material with back-end-of-the-line (BEOL) CMOS technology. The PZT stack and the transfer process have been optimized to avoid degradation of the PZT actuators during the transfer. In particular, we have optimized the seed layer for the growth of highly oriented PZT on a patterned TiO2-Pt layer, optimized the electrodes structure, and developed an Al2O3 capping layer to prevent degradation of PZT during the transfer process. A full wafer-level transfer process and a selective transfer technology allowing the distribution of RF switches from one source wafer to many receiving wafers has been demonstrated. The latest transfer process demonstrated exhibits great potential for cost optimization of wafer-level transfer of microdevices. In a separate experiment, we have demonstrated the BEOL CMOS compatibility of our integration technique. Switch characterization showed insertion loss of less than 0.5 dB and an isolation better than 30 dB for the 0.4- to 6-GHz frequency range with 15-V actuation voltage.

“Millipede” – an AFM data storage system at the frontier of nanotribology

The “Millipede” data storage concept is based on the parallel operation of a large number of micromechanical levers that function as AFM sensors. The technique holds promise to evolve into a novel ultrahigh-density, terabit-capacity, and high-data-rate storage technology. Thermomechanical writing and reading in very thin polymer (PMMA) films is used to store and sense 30–40 nm sized bits of similar pitch size, resulting in 400–500 Gbit/in2 storage densities. High data rates are achieved by operating very large arrays (32×32) of AFM sensors in parallel. Batch-fabrication of 32×32 AFM cantilever array chips has been achieved, and array reading and writing have been demonstrated. An important consideration for the Millipede storage project is the polymer dynamics on the size scale of one bit. Scaling of rheological parameters measured for macroscopic polymer samples is likely to be incorrect due to the finite length of the underlying molecular polymer chain, a size that is comparable to the bit itself. In order to shed light on these issues we performed lifetime studies of regular arrays of nanometer size patterns using light-scattering techniques.

Integrated microheaters for in-situ flying-height control of sliders used in hard-disk drives

Air-bearing sliders in todays hard-disk drives are flying above the spinning magnetic disks at a very low distance. With continuously increasing recording density this distance reduces and will fall below ten nanometers in the near future. This paper discusses the use of thin-film microheaters integrated into the air-bearing surface of such sliders for in-situ flying-height control. The microheaters can be realized with only a few fabrication steps that can be added to the standard slider manufacturing process. The microheaters transfer thermal energy into the sliders leading to nonuniform deformation, of the air-bearing surfaces. As a consequence the balance between the air cushion lift forces and the load forces is shifted and the flying height is varied. A transfer of thermal energy into the air cushion is also discussed. A comparison of experiments and simulations reveals that microheater-induced changes in the waviness of the air-bearing surface are responsible for flying-height actuation with both polarities. Based on this finding actuation schemes with improved efficiency are discussed that offer the possibility of compensating manufacturing tolerances and also of improving the reliability of future hard-disk drives.

Fabrication of a micromachined magnetic X/Y/Z scanner for parallel scanning probe applications

Abstract This paper presents the fabrication and characteristics of a magnetically actuated micromechanical scanner/stage with five degrees of freedom ( X,Y,Z, and tilt about the X and Y axes) intended for use as a compact positioning device in parallel scanning probe applications. The entire scanner has a volume of 30×30×2 mm 3 . It shows a DC displacement amplitude to drive current ratio of 330 nm/mA along the X and Y axes, of 50 nm/mA along the Z axis, and has a resonant frequency in the X/Y plane of 61 Hz.