Robert K. Cook

Computer simulation of carrier transport in planar doped barrier diodes

The operation of planar doped barrier diodes is studied using a numerical device simulation which solves the carrier energy transport equation self‐consistently with the current continuity equation and Poisson’s equation. This allows the effects of space‐charge injection and carrier heating, which have been neglected in previous studies of these devices, to be studied quantitatively. Results for two different doping profiles are presented and compared with the results calculated using the conventional quasi‐equilibrium transport model. Significant differences between the results are found, demonstrating the importance of including hot‐carrier effects in modeling these devices.

Opposite-polarity voltage generator by hole impact ionization in a silicon bipolar transistor

A single n-p-n transistor was used to generate a negative voltage at the collector terminal when a positive voltage was applied to the emitter relative to its grounded base. It is believed that this effect was a result of hole impact ionization at field E approximately=0 at the band-edge energy maximum in the base-collector junction, and some of the electrons so created diffused and drifted to the collector, thus accounting for the otherwise unexpected negative collector potential. Possible applications of this effect are given.<<ETX>>