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Dive into the research topics where Robert W. Wu is active.

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Featured researches published by Robert W. Wu.


Journal of Vacuum Science & Technology B | 1996

MxP+: A new dielectric etcher with enabling technology, high productivity, and low cost‐of‐consumables

Hongching Shan; Evans Lee; Michael Welch; Bryan Pu; James D. Carducci; Kuang-Han Ke; Hua Gao; Paul E. Luscher; Gerard Crean; Rynn Wang; Richard Blume; James Cooper; Robert W. Wu

Dielectric etch accounts for more than half of all the dry etches used in integrated circuit (IC) fabrication, and plays a very important role in fulfilling strict requirements of volume‐manufacturing of IC circuits whose feature size is progressively decreasing. The challenge of meeting volume manufacture requirements is what MxP+ has achieved through a series of hardware and process innovations. By Pareto analysis of the wet clean time of the MxP chamber, we were able to define six major drivers to address three key issues: (1) reduce wet clean time, (2) eliminate system complexity, and (3) achieve technical excellence. Key components of the MxP+ that allow us to address them include a quartz gas distribution plate which prevents the aluminum particle formation, and the electrostatic chuck which eliminates the mechanical clamp system while reducing the particle contamination and wafer edge exclusion. The unique chamber liners of the MxP+ not only shield chamber walls, but also provided a wide process wi...


advanced semiconductor manufacturing conference | 2000

Pilot studies of the manufacturing worthiness of mixed chemistry processings in a MERIE plasma tool

Jack Yang; Luke Zhang; Joshua Tsui; Anbei Jiang; Jennifer Y. Sun; Kaushik Vaidya; Robert W. Wu

This paper presents ground level feasibility study of mix-run capability on applications of metal via etches in a simulated production environment. A mini-marathon was set up to understand any particulate problems and process shift during mix-run in a MERIE plasma etch tool-a commercially available Super e chamber. Particulate, oxide and PR etch rate data will be shown to demonstrate that Super e is a production worthy etch tool for mix-run with different chemistries on metal via etch applications.


Archive | 2001

Adjusting DC bias voltage in plasma chamber

Hong Ching Shan; Evans Lee; Michael Welch; Robert W. Wu; Bryan Pu; Paul E. Luscher; James D. Carducci; Richard Blume


Archive | 1994

Adjustable dc bias control in a plasma reactor

Hongching Shan; Evans Lee; Robert W. Wu


Archive | 1997

Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners

Kenneth S. Collins; Michael R. Rice; Douglas A. Buchberger; Craig A. Roderick; Eric Askarinam; Gerhard Schneider; John Trow; Joshua Tsui; Dennis S. Grimard; Gerald Zheyao Yin; Robert W. Wu


Archive | 1997

Independent gas feeds in a plasma reactor

Haojiang Li; Robert W. Wu


Archive | 1996

Silicon carbide composite article particularly useful for plasma reactors

Hao A. Lu; Nianci Han; Gerald Zheyao Yin; Robert W. Wu


Archive | 2002

Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers

Jennifer Y. Sun; Shun Jackson Wu; Senh Thach; Ananda H. Kumar; Robert W. Wu; Hong Wang; Yixing Lin; Clifford C. Stow


Archive | 1996

Inductively coupled parallel-plate plasma reactor with a conical dome

Gerhard Schneider; Viktor Shel; Andrew Nguyen; Robert W. Wu; Gerald Zheyao Yin


Archive | 1991

Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metal

Paul Arleo; Jon R. Henri; Graham W. Hills; Jerry Wong; Robert W. Wu

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