Rudolf Lachner

A 77GHz 4-channel automotive radar transceiver in SiGe

A fully integrated 4-channel automotive radar transceiver chip, integrated in a 200-GHz SiGe:C production technology, is presented. With a typical transmit power of 2 x +7 dBm at the antenna ports and all functions active, the chip draws a current of about 600 mA from a single 5.5 V supply. The design permits FMCW operation in the 76 to 77 GHz band at chip-backside temperatures from -40degC to +125degC.

A SiGe Monolithically Integrated 278 GHz Push-Push Oscillator

In this paper we present a fully monolithically integrated J-band push-push oscillator. The device is fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency fT = 200 GHz and a maximum frequency of oscillation fmax = 275 GHz. The passive circuitry is realized by integrated transmission-line components, MIM-capacitors and TaN resistors. The frequency of the output signal can be tuned between 275.5 GHz and 279.6 GHz. This oscillator gives the highest output frequency for transistor based oscillators published up to now.

Embedded wafer level ball grid array (eWLB) technology for millimeter-wave applications

The embedded wafer level ball grid array (eWLB) is a novel packaging technology that shows excellent performance for millimeter-wave (mm-wave) applications. We present simulation and measurement results of single-ended and differential transmission lines realized using the thin-film redistribution layers (RDL) of an eWLB. We demonstrate the capabilities for the integration of passives on example of a configurable 17/18 GHz down-converter circuit realized in silicon-germanium (SiGe) technology with a fan-in eWLB differential inductor used for the LC tank. We compare the performance of differential chip-package-board transitions realized in an eWLB and in other common package types. We report an optimized compact chip-package-board transition in the eWLB. We obtain a simulated insertion loss as low as −0.65 dB and a return loss below −16 dB at 77 GHz without external matching networks. We introduce the concept of antenna integration in the eWLB and show examples of single-ended and differential antenna structures. Finally, we present for the first time a single-chip four-channel 77 GHz transceiver in SiGe integrated in the eWLB package together with four dipole antennas. The presented examples demonstrate that the eWLB technology is an attractive candidate for mm-wave applications including system-in-package (SiP).

A monolithically integrated 190-GHz SiGe push-push oscillator

In this letter, we present a fully monolithically integrated G-band push-push oscillator. The device is fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency f/sub T/= 200GHz and a maximum frequency of oscillation fmax= 275GHz. The passive circuitry is realized by integrated transmission-line components, metal-insulator-metal (MIM)-capacitors and TaN resistors. The frequency of the output signal can be tuned between 183.3GHz and 190.5GHz, the maximum output power of the oscillator is -4.5dBm and the measured minimum single sideband phase noise is -73dBc/Hz at 1-MHz offset frequency. This represents the highest output frequency for oscillators using heterojunction bipolar transistor technology and published up to now.

A 77-GHz SiGe single-chip four-channel transceiver module with integrated antennas in embedded wafer-level BGA package

We present for the first time a fully operational 77-GHz silicon-germanium (SiGe) single-chip four-channel transceiver module with four integrated antennas assembled in an embedded wafer-level ball grid array (eWLB) package. This eWLB module has a size of 8 mm × 8 mm and a footprint with a standard ball pitch of 0.5 mm. The module includes four half-wave dipole antennas that are realized using the thin-film redistribution layer (RDL) of the eWLB. The antennas are connected to the transceiver chip using 100-Ω differential coplanar strip (CPS) lines realized in the RDL. The ground plane on top of the printed circuit board (PCB) is used as a reflector for the integrated antenna. Due to integration of the antenna in the package, all mm-wave signals are restricted to the package and no mm-wave transitions to the PCB are required. Moreover, the position of the reflector on the top metallization of the PCB is of great advantage, as it makes the integrated antenna unconstrained by the actual PCB material. Thus, the module can be assembled on any type of PCB. We show that using four radiating elements, it is possible to realize radar system with basic 2D beamforming capabilities. The presented results demonstrate the importance of coherent chip-package co-design and the excellent potential of the eWLB for mm-wave system-in-package (SiP) applications.

SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project

This paper describes the technology development activities within the European funding project DOTSEVEN done by Infineon and IHP. After half of the project duration Infineon has developed a 130 nm SiGe BiCMOS technology with fT of 250 GHz and fmax of 370 GHz. State-of-the-art MMIC performance is demonstrated by a 77 GHz automotive radar transmitter. The suitability of IHṔs advanced SiGe HBT module with epitaxial base link for future industrial BiCMOS platforms is demonstrated by integrating it in Infineons 130 nm process resulting in an fmax of 500 GHz, 1.8 ps gate delay and a record 161 GHz static frequency divider. IHP has achieved an fmax of 570 GHz for the first time using an HBT concept with non-selective epitaxial base deposition and an elevated extrinsic base.

Simultaneous Integration of SiGe High Speed Transistors and High Voltage Transistors

Integration of high voltage transistors and varactors with high tuning range into high frequency SiGe bipolar technologies is challenging due to the requirement of a shallow collector for the high speed transistor. This paper presents a high speed SiGe bipolar technology using a novel concept with two epitaxial layers for the simultaneous integration of high speed transistors, high voltage transistors, and varactors. Using this concept high speed transistors with 209 GHz cut-off frequency and 3.3 ps gate delay have been combined with high voltage transistors providing an emitter-collector breakdown voltage of 5 V. Additionally in this concept a varactor has been developed and optimized to achieve a high tuning range of 13 GHz and low phase noise for a 77 GHz VCO

Three-channel 77 GHz automotive radar transmitter in plastic package

We present a three-channel 77GHz radar transmitter in an embedded wafer-level ball grid array (eWLB) package. The circuit is manufactured in a 0.35 μm SiGe bipolar process. It contains a 77GHz push-push oscillator and three independent power amplifiers with digital power control and a maximum output power of 11.7 dBm. Various frequency divider stages and an additional 18GHz oscillator and down-converter allow the realisation of single-loop and offset PLLs. The 77GHz and 18 GHz oscillators achieve a phase noise of -76 dBc/Hz and -93 dBc/Hz, at 100 kHz offset, respectively. The transmitter operates with a supply voltage of 3.3V and consumes between 205mA and 710 mA, depending on the configuration.

A fully integrated 70 GHz SiGe low phase noise push-push oscillator

This paper describes a fully monolithically integrated push-push oscillator fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency f/sub T/ = 200 GHz and a maximum frequency of oscillation f/sub max/ = 275 GHz. For the passive circuitry transmission-line components, integrated spiral inductors and MIM-capacitors are used. The oscillator output frequency can be tuned from 63 GHz to 72 GHz. In this frequency range the output power varies between -1.8 dBm and +1.6 dBm while the measured single sideband phase noise is less than -103dBc/Hz at 1MHz offset frequency. To our knowledge this phase noise level is the lowest one reported in literature so far for an integrated oscillator in this frequency band.

168 GHz dynamic frequency divider in SiGe:C bipolar technology

This paper presents a dynamic frequency divider operating up to a maximum frequency of 168 GHz. The circuit is based on a first regenerative divider stage which is followed by a static divider and an output buffer. With a supply voltage of 4 V the circuit, including both divider stages and the output buffer, consumes 320mW (105mW in the regenerative divider) and operates up to a maximum frequency of 168 GHz. With a reduced supply voltage of 3.3V a maximum operating frequency of 156 GHz is achieved at a power consumption of only 205 mW. The circuit is manufactured in a SiGe:C bipolar process with a cut-off frequency fT of 215 GHz.