Sabine Boguth

SiGe bipolar technology for automotive radar applications

A SiGe bipolar technology for automotive radar applications around 77 GHz has been developed. A cut-off frequency of 200 GHz, a maximum oscillation frequency of 275 GHz, and a gate delay of 3.5 ps have been obtained. First key building blocks for 77 GHz systems like VCOs and mixers have been realized with this technology.

A 77GHz 4-channel automotive radar transceiver in SiGe

A fully integrated 4-channel automotive radar transceiver chip, integrated in a 200-GHz SiGe:C production technology, is presented. With a typical transmit power of 2 x +7 dBm at the antenna ports and all functions active, the chip draws a current of about 600 mA from a single 5.5 V supply. The design permits FMCW operation in the 76 to 77 GHz band at chip-backside temperatures from -40degC to +125degC.

86 GHz static and 110 GHz dynamic frequency dividers in SiGe bipolar technology

We present static and dynamic frequency dividers manufactured in a 200 GHz f/sub T/ SiGe bipolar technology. The static divider has a divide ratio of 32 and operates up to 86.2 GHz. The dynamic divider is based on regenerative frequency division and has a divide ratio of two. It operates up to 110 GHz (limited by the measurement equipment). The power consumption of the static and dynamic frequency dividers is 900 mW and 310 mW, respectively.

Sub 5 ps SiGe bipolar technology

A SiGe bipolar technology for mixed digital and analog RF applications is presented. Balanced device performance is achieved with a transit frequency f/sub T/ of 155 GHz at a collector emitter breakdown voltage BV/sub CEO/ of 1.9 V, a maximum oscillation frequency f/sub max/ of 167 GHz, and 4.7 ps ring oscillator gate delay. With a 99 GHz dynamic frequency divider and a 19 GHz LNA with 2.2 dB noise figure state-of-the-art results for high-speed digital and analog applications are demonstrated.

3.3 ps SiGe bipolar technology

A SiGe bipolar technology with a transit frequency of 225 GHz and a maximum oscillation frequency of 300 GHz is described. With a ring oscillator gate delay of 3.3 ps and a static frequency divider operating up to 102 GHz input frequency state-of-the-art circuit performance is achieved.

SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project

This paper describes the technology development activities within the European funding project DOTSEVEN done by Infineon and IHP. After half of the project duration Infineon has developed a 130 nm SiGe BiCMOS technology with fT of 250 GHz and fmax of 370 GHz. State-of-the-art MMIC performance is demonstrated by a 77 GHz automotive radar transmitter. The suitability of IHṔs advanced SiGe HBT module with epitaxial base link for future industrial BiCMOS platforms is demonstrated by integrating it in Infineons 130 nm process resulting in an fmax of 500 GHz, 1.8 ps gate delay and a record 161 GHz static frequency divider. IHP has achieved an fmax of 570 GHz for the first time using an HBT concept with non-selective epitaxial base deposition and an elevated extrinsic base.

15 GHz wideband amplifier with 2.8 dB noise figure in SiGe bipolar technology

We present a wideband amplifier with 12 dB gain and a 3-dB bandwidth of 15 GHz. The noise figure is 2.8 dB for frequencies up to 10 GHz and 4 dB at 15 GHz. The circuit is manufactured in an advanced SiGe bipolar technology and consumes 7.2 mA from a 3.3 V supply.

Simultaneous Integration of SiGe High Speed Transistors and High Voltage Transistors

Integration of high voltage transistors and varactors with high tuning range into high frequency SiGe bipolar technologies is challenging due to the requirement of a shallow collector for the high speed transistor. This paper presents a high speed SiGe bipolar technology using a novel concept with two epitaxial layers for the simultaneous integration of high speed transistors, high voltage transistors, and varactors. Using this concept high speed transistors with 209 GHz cut-off frequency and 3.3 ps gate delay have been combined with high voltage transistors providing an emitter-collector breakdown voltage of 5 V. Additionally in this concept a varactor has been developed and optimized to achieve a high tuning range of 13 GHz and low phase noise for a 77 GHz VCO

High-speed SiGe:C bipolar technology

A SiGe:C bipolar technology with a narrow base integrated into a double-polysilicon self-aligned transistor has been developed. A transit frequency of 106 GHz at a collector emitter breakdown voltage of 2.3 V, a maximum oscillation frequency of 145 GHz, and 6.5 ps gate delay demonstrate balanced transistor performance. State-of-the-art results for high-speed digital, analog, and low-power circuits are achieved.

SiGe bipolar technology for mixed digital and analogue RF applications

A SiGe bipolar technology with a low-resistivity base integrated into a double-polysilicon self-aligned transistor has been developed. A transit frequency of 85 GHz, a maximum oscillation frequency of 128 GHz, 6.8 ps gate delay, and a minimum noise figure of 1.2 dB at 10 GHz demonstrate balanced transistor performance. With an 88 GHz dynamic frequency divider and a 12 GHz low noise amplifier with 1.9 dB noise figure, state-of-the-art results for digital as well as analogue applications are achieved.