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Ryotaro Takaguchi

University of Tokyo

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Publication

Featured researches published by Ryotaro Takaguchi.

european solid state device research conference | 2018

MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI

Shinichi Takagi; Kimihiko Kato Wu-Kang Kim; Kwang-Won Jo; Ryo Matsumura; Ryotaro Takaguchi; Daehwan Ahn; Takahiro Gotow; Mitsuru Takenaka

The Japan Society of Applied Physics | 2018

Electrical characteristics of p-channel GOI tunneling FETs fabricated on p-type GOI

Ryotaro Takaguchi; Kimihiko Kato; Mengnan Ke; Mitsuru Takenaka; Shinichi Takagi

Japanese Journal of Applied Physics | 2018

Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe

Ryo Matsumura; Takumi Katoh; Ryotaro Takaguchi; Mitsuru Takenaka; Shinichi Takagi

Japanese Journal of Applied Physics | 2018

Performance enhancement of Ge-on-Insulator tunneling FETs with source junctions formed by low-energy BF2 ion implantation

Takumi Katoh; Ryo Matsumura; Ryotaro Takaguchi; Mitsuru Takenaka; Shinichi Takagi

Japanese Journal of Applied Physics | 2018

Ge p-channel tunneling FETs with steep phosphorus profile source junctions

Ryotaro Takaguchi; Ryo Matsumura; Takumi Katoh; Mitsuru Takenaka; Shinichi Takagi

ECS Transactions | 2018

(Invited) Ultrathin-Body Ge-on-Insulator MOSFET and TFET Technologies

Shinichi Takagi; Wukang Kim; Kwang-Won Jo; Ryo Matsumura; Ryotaro Takaguchi; Takumi Katoh; Tae-Eon Bae; Kimihiko Kato; Mitsuru Takenaka

The Japan Society of Applied Physics | 2017

N-type impurity doping into Ge from Spin On Glass for Tunneling FETs

Ryotaro Takaguchi; Ryo Matsumura; Takumi Katoh; Mitsuru Takenaka; Shinichi Takagi

The Japan Society of Applied Physics | 2017

Enhancement of I ON of GeOI TFETs using low energy BF 2 ion implantation

Takumi Katoh; Ryo Mathumura; Ryotaro Takaguchi; Mithuru Takenaka; Shinichi Takagi

The Japan Society of Applied Physics | 2017

Formation of p + /n Ge junction with steep impurity profile by snowplow effect of NiGe

Ryo Matsumura; Takumi Katoh; Ryotaro Takaguchi; Mitsuru Takenaka; Shinichi Takagi

232nd ECS Meeting (October 1-5, 2017), | 2017

(Invited) Low Power Tunneling FET Technologies Using Ge/III-V Materials

Shinichi Takagi; Daehwan Ahn; M. Noguchi; Sanghee Yoon; Takahiro Gotow; Koichi Nishi; Minsoo Kim; Tae-Eon Bae; Takumi Katoh; Ryo Matsumura; Ryotaro Takaguchi; Mitsuru Takenaka

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Shinichi Takagi

University of Tokyo

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Mitsuru Takenaka

University of Tokyo

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Ryo Matsumura

University of Tokyo

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Takumi Katoh

University of Tokyo

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Daehwan Ahn

University of Tokyo

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Tae-Eon Bae

University of Tokyo

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Takahiro Gotow

University of Tokyo

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Kimihiko Kato

University of Tokyo

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Koichi Nishi

University of Tokyo

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Kwang-Won Jo

University of Tokyo

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