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Dive into the research topics where Salvatore N. Storino is active.

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Featured researches published by Salvatore N. Storino.


international solid-state circuits conference | 1999

A 0.2 /spl mu/m 1.8 V SOI 550 MHz 64 b PowerPC microprocesser with copper interconnects

Anthony Gus Aipperspach; David Howard Allen; Dennis Thomas Cox; Nghia Van Phan; Salvatore N. Storino

A 64 b PowerPC RISC microprocessor is incorporated in a 0.2 /spl mu/m CMOS technology with copper interconnects and multi-threshold transistors and next into a silicon-on-insulator (SOI) version of the same technology. Some architectural changes improve CPI, including doubling the L1 instruction and data caches to 128 kB and adding a 256 kB L2 directory. The total transistor count increased from 12 M to 34 M.


international solid-state circuits conference | 1998

A commercial multithreaded RISC processor

Salvatore N. Storino; Anthony Gus Aipperspach; J. Borkenhagen; R. Eickemeyer; S. Kunkel; S. Levenstein; G. Uhlmann

Implementation of a coarse-grained hardware-multithreaded processor for use in the IBM AS1400 uses a PowerPC architecture that supports two threads. Hardware multithreading is a technique for tolerating memory latency by utilizing otherwise idle cycles in the CPU. This requires the replication of the processor architecture registers for each thread. Replication is not required for the majority of processor logic such as instruction cache, data cache, TLB, instruction fetch and dispatch mechanisms, branch units, fixed-point units, floating-point units, and storage-control units.


international solid-state circuits conference | 2000

A 660 MHz 64b SOI processor with Cu interconnects

T.C. Buchholtz; G. Aipperspach; Dennis Thomas Cox; Nghia Van Phan; Salvatore N. Storino; J.D. Strom; R.R. Williams

The 64b PowerPC RISC microprocessor previously described is migrated from a 0.22 /spl mu/m SOI technology to a 0.18 /spl mu/m SOI technology. Key features of the 0.77 scaled 1.5 V technology are 0.08 /spl mu/m NFET channel lengths, 7 layer Cu metallization with low-/spl epsiv/ dielectric, low dose SOI substrate for improved material quality and productivity, and local interconnect. Dual gate oxide provides high I/O voltage compatibility. As this chip is a migration only 6 levels of metal and stacked devices for high voltage I/O were used.


Archive | 2000

Field protection against thread loss in a multithreaded computer processor

Salvatore N. Storino; Gregory J. Uhlmann


Archive | 2000

Changing the thread capacity of a multithreaded computer processor

Salvatore N. Storino; Gregory J. Uhlmann


Archive | 1999

Method and apparatus for elimination of parasitic bipolar action in logic circuits for history removal under stack contention including complementary oxide semiconductor (CMOS) silicon on insulator (SOI) elements

Salvatore N. Storino; Jeff Van Tran


Archive | 1999

Method and apparatus for implementing adjustable logic threshold in dynamic circuits for maximizing circuit performance

Salvatore N. Storino; Gregory J. Uhlmann; Robert Russell Williams


Archive | 1999

Methods and apparatus for bipolar elimination in silicon-on-insulator (SOI) domino circuits

Andrew Douglas Davies; Salvatore N. Storino; Jeff Van Tran; Robert Russell Williams


Archive | 1999

Method and apparatus for body control in silicon-on-insulator (SOI) domino circuits

Salvatore N. Storino; Jeff Van Tran; Robert Russell Williams


Archive | 2014

STATE SENSING SYSTEM FOR EFUSE MEMORY

Chihhung Liao; Phu Nguyen; Vimal R. Patel; George Francis Paulik; Peder James Paulson; Brian Joy Reed; Salvatore N. Storino

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