Seong-Gyun Kim

Method of manufacturing a semiconductor memory device

Non-Volatile Memory Devices and Methods of Forming the Same

Flash memory device using semiconductor fin and method thereof

Methods of forming a nonvolatile memory device having a local SONOS structure that use spacers to adjust the overlap between a gate electrode and a charge trapping layer

Local SONOS-type nonvolatile memory device and method of manufacturing the same

EEPROM device for increasing a coupling ratio and fabrication method thereof

EEPROM device and manufacturing method thereof

EEPROM device having first and second doped regions that increase an effective channel length

Nonvolatile semiconductor memory device for increasing coupling ratio, and of fabrication method thereof

Non-volatile semiconductor memory e.g. flash memory, has floating gate whose two side surfaces are wave-shaped along lengthwise of channel region formed between source and floating junction regions