Sung-taeg Kang

Method of manufacturing twin-ONO-type SONOS memory using reverse self-alignment process

Non-volatile memory cell having a silicon-oxide-nitride-oxide-silicon gate structure and fabrication method of such cell

Flash memory device using semiconductor fin and method thereof

Nonvolatile semiconductor device and method of fabricating the same

Split gate non-volatile memory devices and methods of forming same

Non-volatile memory device having improved programming and erasing characteristics and method of fabricating the same

Non-volatile memory device having select transistor structure and sonos cell structure and method for fabricating the device

Non-volatile memory cell having a silicon-oxide nitride-oxide-silicon gate structure

Twin-ONO-type SONOS memory

Byte-Erasable Nonvolatile Memory Devices