Seung Yun Lee

Writing current reduction in phase change memory device with U-shaped heater (PCM-U)

For the writing current reduction, we firstly proposed and successfully manufactured phase change memory device with U-shaped heater (PCM-U) device, in which TiN heater surrounds Ge2Sb2Te5 (GST). The experimental results clearly indicate that PCM-U has noticeably shorter SET operation time and 50% smaller RESET current, compared with the conventional. We suggest that the improved properties of PCM-U are due to the overlap of programmable volume.

Nonvolatile programmable metallization cell memory switching element based on Ag-doped SbTe solid electrolyte

We report that industrially qualified SbTe chalcogenide film can be applied to programmable metallization cell memory switching device. To fabricate the switching device, Sb35Te65, Ag, and W (top electrode) were consequently sputtered on TiW (bottom electrode)/SiO2∕Si substrate, and Ag diffusion process was not added. During Ag sputtering, it is apparent that Ag is diffused into Sb35Te65 film to form Ag-doped Sb35Te65 solid electrolyte, and that some of the diffused Ag reacts with Te to form Ag–Te bond in the solid electrolyte.