Sheng-Yao Huang

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

The InGaZnO taken as switching layer in resistive nonvolatile memory is proposed in this paper. The memory cells composed of Ti/InGaZnO/TiN reveal the bipolar switching behavior that keeps stable resistance ratio of 102 with switching responses over 100 cycles. The resistance switching is ascribed to the formation/disruption of conducting filaments upon electrochemical reaction near/at the bias-applied electrode. The influence of electrode material on resistance switching is investigated through Pt/InGaZnO/TiN devices, which perform the unipolar and bipolar behavior as applying bias on Pt and TiN electrode, respectively. Experimental results demonstrate that the switching behavior is selective by the electrode.

Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

This letter investigates the degradation mechanism of amorphous indium-gallium-zinc oxide thin-film transistors under gate-bias stress. The larger Vt shift under positive AC gate-bias stress when compared to DC operation indicates that an extra electron trapping mechanism occurs during rising/falling time during the AC pulse period. In contrast, the degradation behavior under illuminated negative gate-bias stress exhibits the opposite degradation tendency. Since electron and hole trapping are the dominant degradation mechanisms under positive and illuminated negative gate-bias stress, respectively, the different degradation tendencies under AC/DC operation can be attributed to the different trapping efficiency of electrons and holes.

Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory

This study investigates a sputtered InGaZnO (IGZO) thin film to apply into a resistive random access memory device. After the formation of an indium tin oxide (ITO)/IGZO/ITO structure at room temperature, the device exhibits a repeatable bipolar resistance switching behavior without an electroforming process and an excellent transmittance in the visible region. The conduction mechanisms for low and high resistance states are dominated by Ohms law and space-charge-limited current behavior, respectively. In retention and endurance tests, a resistance ratio of more than 1 order remains after 10 4 s at 90°C and after 100 dc voltage sweeping cycles.

A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid

A low-temperature method, supercritical CO2 (SCCO2) fluid technology, is employed to improve the device properties of ZnO TFT at 150 °C. In this work, the undoped ZnO films were deposited by sputter at room temperature and treated by SCCO2 fluid which is mixed with 5 ml pure H2O. After SCCO2 treatment, the on/off current ratios and threshold voltage of the device were improved significantly. From x-ray photoelectron spectroscopy analyses, the enhancements were attributed to the stronger Zn–O bonds, the hydrogen-related donors, and the reduction in dangling bonds at the grain boundary by OH passivation.

Effects of Ambient Atmosphere on Electrical Characteristics of Al2O3 Passivated InGaZnO Thin Film Transistors during Positive-Bias-Temperature-Stress Operation

This study investigates the effects of ambient atmosphere on electrical characteristics of Al2O3 passivated InGaZnO thin film transistors during positive bias temperature stress. Under H2O vapor environment, the Al2O3 passivated device exhibited stable electrical behaviors (ΔV th < 0.5 V), while the unpassivated device showed an apparent hump effect in the transfer curves under bias stress. The hump phenomenon was attributed to the absorption of the H2O molecule which can serve as a donor to develop a conductive back channel. The experiment results suggest that Al2O3 is an effective passivation layer to suppress water vapor absorption in the InGaZnO back channel.

The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors

This paper investigates behavior of drain bias stress and gate-drain bias stress under illumination for InGaZnO thin film transistors as the current-driver operated. Properties exhibit two-stage degradation behavior during drain bias stress. The photo-excited hole non-uniform trapping from illumination induces drain side barrier lowering and causes an apparent hump phenomenon of the subthreshold swing. However, the positive threshold voltage shift without a hump phenomenon after gate-drain bias stress is different degradation behaviors. It is reliant on whether or not an inversion layer exists in the channel. This work also employs capacitance-voltage measurement to further clarify the mechanism of degradation behaviors.

Total and organic mercury concentrations in the white muscles of swordfish (Xiphias gladius) from the Indian and Atlantic oceans

A total of 226 swordfish samples collected from Taiwanese fishing vessels in the Indian and Atlantic oceans were examined for total mercury (THg) and organic Hg (OHg). Analysis of 56 pooled white muscle samples showed that THg and OHg concentrations ranged from 0.056 to 3.97 (1.3 ± 0.97) and from 0.043 to 3.92 (1.01 ± 0.82) µg g−1 flesh mass, respectively. These values were similar to those from various previous studies during the past three decades. THg and OHg were significantly linearly correlated with fork length (FL, cm) of the fish from Indian and Atlantic oceans; however, there was no significant OHg%–FL relationship. OHg and THg also were significantly correlated. Fishes with FL ≤ 140 cm met the methyl Hg (meHg) regulatory standard set by the European Commission Decision (meHg ≤ 1.0); and fish with FL ≤ 211 cm met the Taiwanese Food and Hygiene Standard (meHg ≤ 2.0). Weekly swordfish consumption rates and amounts are recommended accordingly.

Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor

A low-temperature ultra-violet (UV) light enhanced supercritical CO2 (SCCO2) fluid treatment is employed to improve the performance of In-Ga-Zn-O (IGZO) thin film transistor (TFT) device. In this study, amorphous IGZO film deposited by sputtering is investigated in SCCO2 ambient under different illumination conditions. After SCCO2 treatment with UV exposure, the mobility and subthreshold swing of the TFT can be significantly improved. A model is proposed to explain the mechanism, and the improvement is due to the reduction of dangling bonds at the grain boundary. With the help of UV, dangling bonds can be effectively passivated by OH chemical groups.

Photoelectric heat effect induce instability on the negative bias temperature illumination stress for InGaZnO thin film transistors

This paper investigates the instability of negative bias temperature in the dark and the illumination stresses for the InGaZnO thin film transistors. During the negative bias temperature illumination stress, properties exhibit an obvious negative threshold voltage shift and a significant degradation of subthreshold swing. The photoelectric heat effect that combined the effects of electric field, illumination, and temperature induces the generation of dangling bonds in the interface, resulting in an apparent degradation. It is related to the presence of light energy. Finally, this work also employs the capacitance-voltage measurement and recovery behavior to further clarify the mechanism of degradation behaviors.This paper investigates the instability of negative bias temperature in the dark and the illumination stresses for the InGaZnO thin film transistors. During the negative bias temperature illumination stress, properties exhibit an obvious negative threshold voltage shift and a significant degradation of subthreshold swing. The photoelectric heat effect that combined the effects of electric field, illumination, and temperature induces the generation of dangling bonds in the interface, resulting in an apparent degradation. It is related to the presence of light energy. Finally, this work also employs the capacitance-voltage measurement and recovery behavior to further clarify the mechanism of degradation behaviors.

Studies on nonvolatile resistance memory switching behaviors in InGaZnO thin films

In this study, the resistive switching characteristics of the resistive random access memory device based on sputter-deposited IGZO thin film were investigated. The bipolar switching behavior of Ti/IGZO/TiN and ITO/IGZO/TiN devices is regarded as the performance of the formation/disruption of conducting filaments in IGZO thin film. Furthermore, the influence of electrode material is investigated through Pt/IGZO/TiN devices, which perform the unipolar and bipolar behavior while applying bias on Pt and TiN electrode, respectively. In comparison with Ti/IGZO/TiN device, the electrical characteristic of Pt/IGZO/TiN device can be affected by the oxygen content in the sputtering gas mixture of IGZO film. Experimental results demonstrate that the switching behavior is selective by using proper electrode.